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1. 发明申请

WO2005048322A3 METHOD AND APPARATUS FOR IMPROVED BAFFLE PLATE 审中-公开
标题翻译：改进的纸板的方法和装置
公开(公告)号：WO2005048322A3
公开(公告)日：2005-11-24
申请号：PCT/US2004034339
申请日：2004-10-19
申请人： TOKYO ELECTRON LTD , FINK STEVEN T , STRANG ERIC J , LAFLAMME ARTHUR H JR , WALLACE JAY , HYLAND SANDRA
发明人： FINK STEVEN T , STRANG ERIC J , LAFLAMME ARTHUR H JR , WALLACE JAY , HYLAND SANDRA
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32633 , H01J37/32834 , H01L21/67069
摘要： A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate (64) having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. A centering ring (100) mounted in the substrate holder can comprise a centering feature configured to couple (68) with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.
摘要翻译：挡板组件，其构造成在等离子体处理系统中耦合到衬底保持器，包括具有一个或多个开口以允许气体通过其中的挡板（64），其中挡板与衬底的耦合便于在等离子体处理系统中挡板的自动对中。安装在基板保持器中的定心环（100）可以包括定中心特征，其配置成将（68）与挡板上的配合特征相耦合。在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。

2. 发明申请

WO2007117741A2 A REDUCED CONTAMINANT GAS INJECTION SYSTEM AND METHOD OF USING 审中-公开
标题翻译：减少污染物气体注入系统及其使用方法
公开(公告)号：WO2007117741A2
公开(公告)日：2007-10-18
申请号：PCT/US2007061041
申请日：2007-01-25
申请人： TOKYO ELECTRON LTD , ENOMOTO TAKASHI , HAGIHARA MASAAKI , KO AKITERU , HAMAMOTO SHINJI , URAKAWA MASAFUMI , LAFLAMME ARTHUR H JR , HELLER EDWARD
发明人： ENOMOTO TAKASHI , HAGIHARA MASAAKI , KO AKITERU , HAMAMOTO SHINJI , URAKAWA MASAFUMI , LAFLAMME ARTHUR H JR , HELLER EDWARD
IPC分类号： H01L21/306 , B05D5/12 , C23F1/00 , H01M4/88
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32449 , H01L21/32136 , H01L21/67069
摘要： A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.
摘要翻译：气体注入系统包括用于在处理室中分配处理气体的扩散器。气体注入系统可以用于涉及腐蚀性工艺气体的多晶硅蚀刻系统中。

3. 发明申请

WO2004084280A2 PROCESSING SYSTEM AND METHOD FOR TREATING A SUBSTRATE 审中-公开
标题翻译：处理系统和处理基板的方法
公开(公告)号：WO2004084280A2
公开(公告)日：2004-09-30
申请号：PCT/US2004/007865
申请日：2004-03-16
申请人： TOKYO ELECTRON LIMITED , HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
发明人： HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , H01L21/0337 , H01L21/31116 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253 , Y10T29/41
摘要： A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
摘要翻译：一种用于化学氧化物去除（COR）的处理系统和方法，其中所述处理系统包括第一处理室和第二处理室，其中所述第一和第二处理室彼此耦合。第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

4. 发明申请

WO2005048322A2 METHOD AND APPARATUS FOR IMPROVED BAFFLE PLATE 审中-公开
标题翻译：改进的纸板的方法和装置
公开(公告)号：WO2005048322A2
公开(公告)日：2005-05-26
申请号：PCT/US2004/034339
申请日：2004-10-19
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , STRANG, Eric, J. , LAFLAMME, Arthur, H., Jr. , WALLACE, Jay , HYLAND, Sandra
发明人： FINK, Steven, T. , STRANG, Eric, J. , LAFLAMME, Arthur, H., Jr. , WALLACE, Jay , HYLAND, Sandra
IPC分类号： H01L21/00
CPC分类号： H01J37/32633 , H01J37/32834 , H01L21/67069
摘要： A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.
摘要翻译：构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。

5. 发明申请

WO2004082820A3 PROCESSING SYSTEM AND METHOD FOR CHEMICALLY TREATING A SUBSTRATE 审中-公开
标题翻译：用于化学处理基材的处理系统和方法
公开(公告)号：WO2004082820A3
公开(公告)日：2004-11-04
申请号：PCT/US2004007864
申请日：2004-03-16
申请人： TOKYO ELECTRON LTD , HAMELIN THOMAS , WALLACE JAY , LAFLAMME ARTHUR H JR
发明人： HAMELIN THOMAS , WALLACE JAY , LAFLAMME ARTHUR H JR
IPC分类号： C23C16/44 , C25D11/02 , H01L21/00 , H01L21/677 , C23C16/458 , H01L21/673
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译：一种用于化学处理基板的处理系统和方法，其中该处理系统包括温度受控的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。衬底支架与化学处理室热绝缘。在包括壁温度，表面温度和气体压力的受控条件下，将衬底暴露于没有等离子体的气体化学物质。衬底的化学处理会化学改变衬底上的暴露表面。

6. 发明申请

WO2004088729A1 CHEMICAL PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：化学处理系统及方法
公开(公告)号：WO2004088729A1
公开(公告)日：2004-10-14
申请号：PCT/US2004/008872
申请日：2004-03-23
申请人： TOKYO ELECTRON LIMITED , LAFLAMME, Arthur, H., Jr. , WALLACE, Jay , STRANG, Eric, J.
发明人： LAFLAMME, Arthur, H., Jr. , WALLACE, Jay , STRANG, Eric, J.
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , C23C16/45565
摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.
摘要翻译：化学处理系统包括含有化学处理区域和气体注入系统的处理室。气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。检测混合物速率并用于控制混合。

7. 发明申请

WO2004082821A2 PROCESSING SYSTEM AND METHOD FOR THERMALLY TREATING A SUBSTRATE 审中-公开
标题翻译：用于热处理基板的处理系统和方法
公开(公告)号：WO2004082821A2
公开(公告)日：2004-09-30
申请号：PCT/US2004007866
申请日：2004-03-16
申请人： TOKYO ELECTRON LTD , HAMELIN THOMAS , WALLACE JAY , LAFLAMME ARTHUR H JR
发明人： HAMELIN THOMAS , WALLACE JAY , LAFLAMME ARTHUR H JR
IPC分类号： C23C16/44 , C25D11/02 , H01L21/00 , H01L21/677 , B01J
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for thermally treating a substrate, wherein the processing system comprises a temperature controlled thermal treatment chamber, and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber.
摘要翻译：一种用于热处理基板的处理系统和方法，其中所述处理系统包括温度控制的热处理室和用于支撑用于热处理的基板的温度控制的基板保持器。衬底保持器与热处理室隔热。

8. 发明申请

WO2004082821A3 PROCESSING SYSTEM AND METHOD FOR THERMALLY TREATING A SUBSTRATE 审中-公开
公开(公告)号：WO2004082821A3
公开(公告)日：2004-09-30
申请号：PCT/US2004/007866
申请日：2004-03-16
申请人： TOKYO ELECTRON LIMITED , HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
发明人： HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
IPC分类号： H01L21/00
摘要： A processing system and method for thermally treating a substrate, wherein the processing system comprises a temperature controlled thermal treatment chamber, and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber.

9. 发明申请

WO2004082820A2 PROCESSING SYSTEM AND METHOD FOR CHEMICALLY TREATING A SUBSTRATE 审中-公开
标题翻译：用于化学处理基板的处理系统和方法
公开(公告)号：WO2004082820A2
公开(公告)日：2004-09-30
申请号：PCT/US2004/007864
申请日：2004-03-16
申请人： TOKYO ELECTRON LIMITED , HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
发明人： HAMELIN, Thomas , WALLACE, Jay , LAFLAMME, Arthur, H., Jr.
IPC分类号： B01J
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译：一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。衬底保持器与化学处理室隔热。在受控条件下，包括壁温，表面温度和气体压力，将基板暴露于无等离子体的气态化学品。衬底的化学处理化学改变衬底上的暴露表面。

10. 发明申请

WO2007117741A3 A REDUCED CONTAMINANT GAS INJECTION SYSTEM AND METHOD OF USING 审中-公开
公开(公告)号：WO2007117741A3
公开(公告)日：2007-10-18
申请号：PCT/US2007/061041
申请日：2007-01-25
申请人： TOKYO ELECTRON LIMITED , ENOMOTO, Takashi , HAGIHARA, Masaaki , KO, Akiteru , HAMAMOTO, Shinji , URAKAWA, Masafumi , LAFLAMME, Arthur, H., Jr. , HELLER, Edward
发明人： ENOMOTO, Takashi , HAGIHARA, Masaaki , KO, Akiteru , HAMAMOTO, Shinji , URAKAWA, Masafumi , LAFLAMME, Arthur, H., Jr. , HELLER, Edward
IPC分类号： C23C16/00
摘要： A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.

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