会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency
    • 发光氮化物基发光器件具有欧姆特性和发光效率
    • US08395176B2
    • 2013-03-12
    • US11076249
    • 2005-03-10
    • Tae-yeong SeongKyoung-kook KimJune-o SongDong-seok LeemJung-inn Sohn
    • Tae-yeong SeongKyoung-kook KimJune-o SongDong-seok LeemJung-inn Sohn
    • H01L33/00
    • H01L33/42H01L33/387H01L2933/0016
    • A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.
    • 顶部发光氮化物系发光器件及其制造方法。 具有依次形成的基板,n包层,有源层和p型包覆层的顶部发射氮化物系发光器件包括:网格单元层,其通过栅格阵列形成在p包层上 由宽度小于30微米的导电材料形成的分离的电池,以改善电气和光学特性; 表面保护层,其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。 发光器件及其制造方法提供了对p型覆层的改善的欧姆接触,优异的I-V特性和高透光率,从而提高了器件的发光效率。