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1. 发明申请

US20110309505A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110309505A1
公开(公告)日：2011-12-22
申请号：US13221037
申请日：2011-08-30
申请人： Kouji TAKEMURA
发明人： Kouji TAKEMURA
IPC分类号： H01L23/498 , H01L21/66
CPC分类号： H01L23/3171 , H01L22/32 , H01L23/3114 , H01L24/05 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/02233 , H01L2224/02377 , H01L2224/02381 , H01L2224/0392 , H01L2224/0401 , H01L2224/05024 , H01L2224/05554 , H01L2224/05568 , H01L2224/0603 , H01L2224/131 , H01L2224/48091 , H01L2224/48227 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10162 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor integrated circuit device (1). In the semiconductor integrated circuit device (1), a semiconductor integrated circuit (5) is formed on a center of the surface of a semiconductor substrate (3), and a plurality of electrode terminals (71, 73, . . . ) are provided on the surface of the semiconductor substrate (3). A protection film (9) is provided on the surface of the semiconductor substrate (3) such that the surfaces of the electrode terminals (71, 73) are exposed. The electrode terminals (71, 73, . . . ) include an electrode terminal (73) having a thin portion (74). The surface of the thin portion (74) is located below the surfaces of the electrode terminals except for the electrode terminal (73) having the thin portion (74) among the electrode terminals (71, 73, . . . ).
摘要翻译：半导体器件包括半导体集成电路器件（1）。在半导体集成电路器件（1）中，半导体集成电路（5）形成在半导体衬底（3）的表面的中心，并且设置有多个电极端子（71,73 ...）在半导体衬底（3）的表面上。在半导体基板（3）的表面上设置保护膜（9），使得电极端子（71,73）的表面露出。电极端子（71,73 ...）包括具有薄部分（74）的电极端子（73）。除了在电极端子（71,73 ...中）中具有薄部分（74）的电极端子（73）之外，薄部分（74）的表面位于电极端子的表面下方。

2. 发明申请

US20080099679A1 THERMAL-TYPE INFRARED IMAGING DEVICE AND OPERATION METHOD THEREOF 有权
标题翻译：热型红外成像装置及其操作方法
公开(公告)号：US20080099679A1
公开(公告)日：2008-05-01
申请号：US11928269
申请日：2007-10-30
申请人： Kouji Takemura , Kazuyuki Egashira , Yutaka Tanaka
发明人： Kouji Takemura , Kazuyuki Egashira , Yutaka Tanaka
IPC分类号： H01L27/16
CPC分类号： G01J5/22 , G01J1/44 , H04N5/33 , H04N5/335 , H04N5/35563
摘要： Thermal-type infrared imaging device comprises an infrared ray detection unit in which pixels, each of which includes a bolometer, are arranged two-dimensionally; and a signal processing unit that sequentially reads signal of each bolometer in synchronization with switching operation of a horizontal shift register and a vertical shift register, integrates the read signal using an integration circuit, and outputs the integrated signal. The signal processing unit is configured so that it can set a sensitivity (for example, voltage applied to bolometer, capacitance of a capacitor in the integration circuit, and/or period of time for integrating the signal) for each pixel according to a predetermined pattern in synchronization with switching operation for classifying a plurality of pixels into a plurality of types of pixels for which different sensitivities are set, for example, high-sensitivity pixels 15 with a narrow temperature measurement range and a high temperature resolution and low-sensitivity pixels 16 with a wider temperature measurement range and a lower temperature resolution than those of the high-sensitivity pixels 15.
摘要翻译：热式红外线成像装置包括红外线检测单元，其中包括测辐射热计的每个像素被二维布置; 以及信号处理单元，其与水平移位寄存器和垂直移位寄存器的切换操作同步地依次读取每个测辐射热板的信号，并使用积分电路对读出信号进行积分，并输出积分信号。信号处理单元被配置为使得其可以根据预定模式设置灵敏度（例如，施加于测辐射热计的电压，积分电路中的电容器的电容和/或用于积分信号的时间）与用于将多个像素分类为设置不同灵敏度的多种像素的切换操作同步，例如具有窄温度测量范围和高温度分辨率和低灵敏度像素16的高灵敏度像素15 具有比高灵敏度像素15更宽的温度测量范围和更低的温度分辨率。

3. 发明授权

US07645990B2 Thermal-type infrared imaging device and operation method thereof 有权
标题翻译：热式红外成像装置及其操作方法
公开(公告)号：US07645990B2
公开(公告)日：2010-01-12
申请号：US11928269
申请日：2007-10-30
申请人： Kouji Takemura , Kazuyuki Egashira , Yutaka Tanaka
发明人： Kouji Takemura , Kazuyuki Egashira , Yutaka Tanaka
IPC分类号： H01L27/16
CPC分类号： G01J5/22 , G01J1/44 , H04N5/33 , H04N5/335 , H04N5/35563
摘要： Thermal-type infrared imaging device comprises an infrared ray detection unit in which pixels, each of which includes a bolometer, are arranged two-dimensionally; and a signal processing unit that sequentially reads signal of each bolometer in synchronization with switching operation of a horizontal shift register and a vertical shift register, integrates the read signal using an integration circuit, and outputs the integrated signal. The signal processing unit is configured so that it can set a sensitivity (for example, voltage applied to bolometer, capacitance of a capacitor in the integration circuit, and/or period of time for integrating the signal) for each pixel according to a predetermined pattern in synchronization with switching operation for classifying a plurality of pixels into a plurality of types of pixels for which different sensitivities are set, for example, high-sensitivity pixels 15 with a narrow temperature measurement range and a high temperature resolution and low-sensitivity pixels 16 with a wider temperature measurement range and a lower temperature resolution than those of the high-sensitivity pixels 15.
摘要翻译：热式红外线成像装置包括红外线检测单元，其中包括测辐射热计的每个像素被二维布置; 以及信号处理单元，其与水平移位寄存器和垂直移位寄存器的切换操作同步地依次读取每个测辐射热板的信号，并使用积分电路对读出信号进行积分，并输出积分信号。信号处理单元被配置为使得其可以根据预定模式设置灵敏度（例如，施加于测辐射热计的电压，积分电路中的电容器的电容和/或用于积分信号的时间）与用于将多个像素分类为设置不同灵敏度的多种像素的切换操作同步，例如具有窄温度测量范围和高温度分辨率和低灵敏度像素16的高灵敏度像素15 具有比高灵敏度像素15更宽的温度测量范围和更低的温度分辨率。

4. 发明授权

US08598701B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08598701B2
公开(公告)日：2013-12-03
申请号：US13421000
申请日：2012-03-15
申请人： Keisuke Sato , Kouji Takemura
发明人： Keisuke Sato , Kouji Takemura
IPC分类号： H01L23/10
CPC分类号： H01L23/433 , H01L23/3128 , H01L23/3675 , H01L23/42 , H01L23/49816 , H01L23/49838 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/09701 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/16251 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has high reliability which suppresses a temperature rise of a set housing within an allowable range, and avoids an effect on a wiring on a package substrate due to thermal expansion of a heat dissipating member. The semiconductor device includes a semiconductor element, a package substrate, and a heat dissipating member. A first main surface of the semiconductor element faces an element-mounting surface of the package substrate and is connected to the package substrate. A main surface part of the heat dissipating member contacts a second main surface which is a back surface of first main surface of semiconductor element. A bonding part around a periphery of the main surface part is bonded to a bonding area of the element-mounting surface of the package substrate. A wiring on the package substrate is arranged at a portion other than the element-mounting surface, in a region of the bonding area.
摘要翻译：半导体器件具有高的可靠性，其将设置的壳体的温度上升抑制在允许范围内，并且避免了由于散热构件的热膨胀对封装衬底上的布线的影响。半导体器件包括半导体元件，封装基板和散热元件。半导体元件的第一主表面面向封装基板的元件安装表面并连接到封装基板。散热构件的主表面部分接触作为半导体元件的第一主表面的后表面的第二主表面。围绕主表面部分的周边的接合部分结合到封装基板的元件安装表面的接合区域。在接合区域的区域中，在元件安装表面以外的部分设置封装基板上的布线。

5. 发明授权

US08421208B2 Electrode pad having a recessed portion 有权
标题翻译：电极焊盘具有凹部
公开(公告)号：US08421208B2
公开(公告)日：2013-04-16
申请号：US13221037
申请日：2011-08-30
申请人： Kouji Takemura
发明人： Kouji Takemura
IPC分类号： H01L23/48 , H01L21/44 , H05K7/10
CPC分类号： H01L23/3171 , H01L22/32 , H01L23/3114 , H01L24/05 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/02233 , H01L2224/02377 , H01L2224/02381 , H01L2224/0392 , H01L2224/0401 , H01L2224/05024 , H01L2224/05554 , H01L2224/05568 , H01L2224/0603 , H01L2224/131 , H01L2224/48091 , H01L2224/48227 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10162 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor integrated circuit device (1). In the semiconductor integrated circuit device (1), a semiconductor integrated circuit (5) is formed on a center of the surface of a semiconductor substrate (3), and a plurality of electrode terminals (71, 73, . . . ) are provided on the surface of the semiconductor substrate (3). A protection film (9) is provided on the surface of the semiconductor substrate (3) such that the surfaces of the electrode terminals (71, 73) are exposed. The electrode terminals (71, 73, . . . ) include an electrode terminal (73) having a thin portion (74). The surface of the thin portion (74) is located below the surfaces of the electrode terminals except for the electrode terminal (73) having the thin portion (74) among the electrode terminals (71, 73, . . . ).
摘要翻译：半导体器件包括半导体集成电路器件（1）。在半导体集成电路器件（1）中，半导体集成电路（5）形成在半导体衬底（3）的表面的中心，并且提供多个电极端子（71,73）在半导体衬底（3）的表面上。在半导体基板（3）的表面上设置保护膜（9），使得电极端子（71,73）的表面露出。电极端子（71,73 ...）包括具有薄部分（74）的电极端子（73）。除了在电极端子（71,73 ...中）中具有薄部分（74）的电极端子（73）之外，薄部分（74）的表面位于电极端子的表面下方。

6. 发明申请

US20120168930A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120168930A1
公开(公告)日：2012-07-05
申请号：US13421000
申请日：2012-03-15
申请人： KEISUKE SATO , KOUJI TAKEMURA
发明人： KEISUKE SATO , KOUJI TAKEMURA
IPC分类号： H01L23/34
CPC分类号： H01L23/433 , H01L23/3128 , H01L23/3675 , H01L23/42 , H01L23/49816 , H01L23/49838 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/09701 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/16251 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has high reliability which suppresses a temperature rise of a set housing within an allowable range, and avoids an effect on a wiring on a package substrate due to thermal expansion of a heat dissipating member. The semiconductor device includes a semiconductor element, a package substrate, and a heat dissipating member. A first main surface of the semiconductor element faces an element-mounting surface of the package substrate and is connected to the package substrate. A main surface part of the heat dissipating member contacts a second main surface which is a back surface of first main surface of semiconductor element. A bonding part around a periphery of the main surface part is bonded to a bonding area of the element-mounting surface of the package substrate. A wiring on the package substrate is arranged at a portion other than the element-mounting surface, in a region of the bonding area.
摘要翻译：半导体器件具有高的可靠性，其将设置的壳体的温度上升抑制在允许范围内，并且避免了由于散热构件的热膨胀对封装衬底上的布线的影响。半导体器件包括半导体元件，封装衬底和散热构件。半导体元件的第一主表面面向封装基板的元件安装表面并连接到封装基板。散热构件的主表面部分接触作为半导体元件的第一主表面的后表面的第二主表面。围绕主表面部分的周边的接合部分结合到封装基板的元件安装表面的接合区域。在接合区域的区域中，在元件安装表面以外的部分设置封装基板上的布线。

7. 发明申请

US20100155942A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100155942A1
公开(公告)日：2010-06-24
申请号：US12713799
申请日：2010-02-26
申请人： Kouji TAKEMURA , Noriyuki Nagai , Takatoshi Osumi
发明人： Kouji TAKEMURA , Noriyuki Nagai , Takatoshi Osumi
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/12 , H01L24/05 , H01L24/06 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/0106 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/15184
摘要： A semiconductor device includes: a connection electrode formed on a side of a semiconductor element substrate opposed to a bump, where the semiconductor element substrate includes a semiconductor element; a passivation layer covering the semiconductor element substrate and an end portion of the connection electrode; and a barrier metal layer covering the connection electrode and a portion of the passivation layer so as to be electrically connected to the bump. A recess is formed in a portion of the passivation layer connected with the barrier metal layer.
摘要翻译：半导体器件包括：形成在半导体元件衬底的与凸块相对的一侧的连接电极，其中半导体元件衬底包括半导体元件; 覆盖半导体元件基板的钝化层和连接电极的端部; 以及阻挡金属层，其覆盖所述连接电极和所述钝化层的一部分，以便电连接到所述凸块。在与阻挡金属层连接的钝化层的一部分中形成凹部。

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