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1. 发明授权

US07754620B2 Film formation method and recording medium 失效
标题翻译：成膜方法和记录介质
公开(公告)号：US07754620B2
公开(公告)日：2010-07-13
申请号：US11391246
申请日：2006-03-29
申请人： Kouji Shimomura
发明人： Kouji Shimomura
IPC分类号： H01L21/469
CPC分类号： H01L21/31662 , C23C16/0272 , C23C16/401 , H01L21/02148 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02323 , H01L21/0234 , H01L21/28194 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.
摘要翻译：公开了一种在处理容器中的硅衬底上形成金属硅酸盐膜的方法，其包括以下步骤：（a）通过将氧化气体进料到处理容器中，在硅衬底上形成氧化膜; 和（b）通过继续供给氧化气体并通过将由酰胺类有机铪化合物形成的第一气相材料和由含硅材料形成的第二气相材料供给到基底氧化物膜上形成金属硅酸盐膜处理容器。

2. 发明申请

US20060223338A1 Film formation method and recording medium 失效
标题翻译：成膜方法和记录介质
公开(公告)号：US20060223338A1
公开(公告)日：2006-10-05
申请号：US11391246
申请日：2006-03-29
申请人： Kouji Shimomura
发明人： Kouji Shimomura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , C23C16/0272 , C23C16/401 , H01L21/02148 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02323 , H01L21/0234 , H01L21/28194 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.
摘要翻译：公开了一种在处理容器中的硅衬底上形成金属硅酸盐膜的方法，其包括以下步骤：（a）通过将氧化气体进料到处理容器中，在硅衬底上形成氧化膜; 和（b）通过继续供给氧化气体并通过将由酰胺类有机铪化合物形成的第一气相材料和由含硅材料形成的第二气相材料供给到基底氧化物膜上形成金属硅酸盐膜处理容器。

3. 发明申请

US20050115501A1 Processing device and method of maintaining the device 失效
标题翻译：处理装置和维护装置的方法
公开(公告)号：US20050115501A1
公开(公告)日：2005-06-02
申请号：US10503126
申请日：2003-02-07
申请人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
发明人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
IPC分类号： G01F1/00 , C23C16/44 , C23C16/448 , G01F25/00 , G05D7/06 , H01L21/304 , H01L21/31 , C23C16/00
CPC分类号： G05D7/0635 , C23C16/4402 , C23C16/4481 , Y10T137/0419 , Y10T137/4259 , Y10T137/7759
摘要： A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.
摘要翻译：一种使用气化液体源的膜处理装置，其能够确认流量控制设备的流量控制精度，例如质量流量控制器（15），其控制液体源的流动，而不将流量控制设备与管道分离并拆卸管道，包括旁路通道（41），用于旁路用于将洗涤流体供给到液体源供给通道（12）的一部分洗涤流体供给通道（32）和诸如MFM（42）的流量计，其中允许洗涤流体流动通过MFM（42）到质量流量控制器（15），并且将由MFM（42）检测到的洗涤流体的流量与在质量流量控制器（15）中设定的目标流量进行比较，以检查质量流量控制器（15）正常运行。

4. 发明申请

US20080254644A1 Method of Substrate Treatment, Computer-Readable Recording Medium, Substrate Treating Apparatus and Substrate Treating System 有权
标题翻译：基板处理方法，计算机可读记录介质，基板处理装置和基板处理系统
公开(公告)号：US20080254644A1
公开(公告)日：2008-10-16
申请号：US12088940
申请日：2007-04-25
申请人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
发明人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
IPC分类号： H01L21/31 , C23C16/52 , G06F19/00
CPC分类号： H01L21/3144 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L29/518
摘要： A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.
摘要翻译：在包括将氮原子引入高电介质膜的第一处理位置和用于对高电介质膜进行热处理的第二处理位置的单晶片基板处理装置中公开的基板处理方法包括：依次将多个基板输送为一个一个地处理到第一处理位置和第二处理位置; 依次对待处理的基板上的高电介质膜进行氮原子的引入和热处理，其中在第一处理后的第二处理位置的待处理基板上的处理在30秒内开始位置。

5. 发明授权

US5411997A Mud material used for iron tap hole in blast furnace 失效
标题翻译：用于高炉铁龙头的泥浆
公开(公告)号：US5411997A
公开(公告)日：1995-05-02
申请号：US945643
申请日：1992-11-05
申请人： Kengo Ohara , Hirao Omori , Osamu Michihiro , Makoto Suga , Kouji Shimomura , Toshitake Okada , Yuji Ochiai
发明人： Kengo Ohara , Hirao Omori , Osamu Michihiro , Makoto Suga , Kouji Shimomura , Toshitake Okada , Yuji Ochiai
IPC分类号： C04B35/634 , C04B35/66 , C21B7/12 , F27B1/21 , F27D3/15 , B22C1/22
CPC分类号： C04B35/63476 , C04B35/66 , C21B7/125 , F27B1/21 , F27D3/1536 , C04B2111/00887 , C04B2235/9676
摘要： The object of the present invention is to develop an innovative mud material which has the properties of a resin-type mud material for improving the working environment, which mud material is capable of increasing the depth of an iron tap hole and of improving the adhesion to mud material deposited in a furnace at high heat, such adhesion being a drawback of the conventional art.This invention provides a mud material used for an iron tap hole in a blast furnace, wherein 8 to 20 wt % of a solution of a novolak-type phenolic resin having a specific number-average molecular weight and serving as a binder is added to and blended with a refractory aggregate used as a conventional mud material.
摘要翻译： PCT No.PCT / JP92 / 00264 Sec。 371日期：1992年11月5日 102（e）日期1992年11月5日PCT 1991年3月5日PCT公布。出版物WO92 / 15537 日本1992年9月17日。本发明的目的是开发具有改善工作环境的树脂型泥浆材料的特性的创新泥浆材料，该泥浆材料能够增加铁丝锥的深度并且提高了在高温下沉积在炉中的泥浆材料的粘附性，这种粘合性是传统技术的缺点。本发明提供了一种用于高炉中的铁离子孔的泥浆材料，其中加入8至20重量％的具有特定数均分子量和用作粘合剂的酚醛清漆型酚醛树脂溶液和与用作常规泥浆材料的耐火骨料混合。

6. 发明授权

US07858509B2 High-dielectric film substrate processing method 有权
标题翻译：高介电膜基板加工方法
公开(公告)号：US07858509B2
公开(公告)日：2010-12-28
申请号：US12088940
申请日：2007-04-25
申请人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
发明人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
IPC分类号： H01L21/3205
CPC分类号： H01L21/3144 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L29/518
摘要： A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.
摘要翻译：在包括将氮原子引入高电介质膜的第一处理位置和用于对高电介质膜进行热处理的第二处理位置的单晶片基板处理装置中公开的基板处理方法包括：将多个基板依次传送为一个一个地处理到第一处理位置和第二处理位置; 依次对待处理的基板上的高电介质膜进行氮原子的引入和热处理，其中在第一处理后的第二处理位置的待处理基板上的处理在30秒内开始位置。

7. 发明授权

US07367350B2 Processing device and method of maintaining the device 失效
标题翻译：处理装置和维护装置的方法
公开(公告)号：US07367350B2
公开(公告)日：2008-05-06
申请号：US10503126
申请日：2003-02-07
申请人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
发明人： Daisuke Toriya , Kenji Homma , Akihiko Tsukada , Kouji Shimomura
IPC分类号： G05D7/06
CPC分类号： G05D7/0635 , C23C16/4402 , C23C16/4481 , Y10T137/0419 , Y10T137/4259 , Y10T137/7759
摘要： A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.
摘要翻译：一种使用气化液体源的膜处理装置，其能够确认流量控制设备的流量控制精度，例如质量流量控制器（15），其控制液体源的流动，而不将流量控制设备与管道分离并拆卸管道，包括旁路通道（41），用于旁路用于将洗涤流体供给到液体源供给通道（12）的一部分洗涤流体供给通道（32）和诸如MFM（42）的流量计，其中允许洗涤流体流动通过MFM（42）到质量流量控制器（15），并且将由MFM（42）检测到的洗涤流体的流量与在质量流量控制器（15）中设定的目标流量进行比较，以检查质量流量控制器（15）正常运行。

8. 发明申请

US20080233764A1 Formation of Gate Insulation Film 审中-公开
标题翻译：门绝缘膜的形成
公开(公告)号：US20080233764A1
公开(公告)日：2008-09-25
申请号：US11547671
申请日：2005-04-11
申请人： Tsuyoshi Takahashi , Kouji Shimomura , Genji Nakamura , Shintaro Aoyama , Kazuyoshi Yamazaki
发明人： Tsuyoshi Takahashi , Kouji Shimomura , Genji Nakamura , Shintaro Aoyama , Kazuyoshi Yamazaki
IPC分类号： H01L21/283 , C23G1/02
CPC分类号： H01L21/28202 , C23C16/401 , C23C16/56 , H01L21/28194 , H01L21/3143 , H01L21/316 , H01L21/31608 , H01L21/31645 , H01L29/518
摘要： A method of forming a gate insulation film 4 comprising a hafnium silicate material with a SiO2 equivalent oxide thickness of 1.45 nm or less on a silicon substrate 1 is disclosed. The method includes the steps of: cleaning a surface of the silicon substrate 1 to establish thereon a clean surface on which substantially no oxygen is present; forming a hafnium silicate film 2 on the clean surface of the silicon substrate 1 by a CVD process using an amide type organic hafnium compound and a silicon-containing raw material; applying an oxidation treatment to the hafnium silicate film 2, and applying a nitriding treatment to the hafnium silicate film 2 after applying the oxidation treatment. According to the method, a gate insulation film with favorable surface roughness can be obtained even if the film thickness is thin.
摘要翻译：公开了一种在硅衬底1上形成厚度为1.45nm或更小的SiO 2 2当量氧化物厚度的硅酸铪材料的栅极绝缘膜4的方法。该方法包括以下步骤：清洁硅衬底1的表面以在其上建立基本上不存在氧的清洁表面; 通过使用酰胺型有机铪化合物和含硅原料的CVD法在硅衬底1的清洁表面上形成硅酸铪膜2; 对硅酸铪膜2进行氧化处理，在进行氧化处理后对硅酸铪膜2进行氮化处理。根据该方法，即使膜厚较薄，也可获得具有良好表面粗糙度的栅极绝缘膜。

9. 发明授权

US06319327B1 MOCVD system 有权
标题翻译： MOCVD系统
公开(公告)号：US06319327B1
公开(公告)日：2001-11-20
申请号：US09624488
申请日：2000-07-24
申请人： Akihiko Tsukada , Akihiko Hiroe , Kouji Shimomura
发明人： Akihiko Tsukada , Akihiko Hiroe , Kouji Shimomura
IPC分类号： C23C1600
CPC分类号： C23C16/4402 , C23C16/405 , C23C16/4481
摘要： Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35° C.
摘要翻译：公开了一种用于在半导体晶片上形成氧化钽膜的MOCVD系统，同时使用五乙氧基钽作为液体原料。在该系统中，原料罐通过具有流量控制单元的上游主管线连接到蒸发单元。蒸发单元通过下游主管线连接到成膜单元的处理室。分隔壁布置成围绕整个系统，以将其与洁净室中的其他空间隔离。原料罐，流量控制单元及其上游主管的一部分在一起保持在恒温隔热箱中，并保持在25〜35℃的温度。

10. 发明申请

US20080242113A1 FILM FORMING METHOD OF HIGH-K DIELECTRIC FILM 审中-公开
标题翻译：高K电介质薄膜成膜方法
公开(公告)号：US20080242113A1
公开(公告)日：2008-10-02
申请号：US12101514
申请日：2008-04-11
申请人： Shintaro AOYAMA , Tsuyoshi TAKAHASHI , Kouji SHIMOMURA , Miki ARUGA
发明人： Shintaro AOYAMA , Tsuyoshi TAKAHASHI , Kouji SHIMOMURA , Miki ARUGA
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C23C16/0272 , C23C16/401 , C23C16/45536 , C23C16/56 , H01L21/02052 , H01L21/02271 , H01L21/02332 , H01L21/0234 , H01L21/31645 , H01L21/318
摘要： A method for forming a high-K dielectric film on a silicon substrate includes the steps of processing a surface of the silicon substrate with a diluted hydrofluoric acid, conducting nucleation process of HfN, after the step of processing with the diluted hydrofluoric acid, by supplying a metal organic source containing Hf and nitrogen to the surface of said silicon substrate, and forming an Hf silicate film by a CVD process, after the step of nucleation, by supplying a metal organic source containing Hf and a metal organic source containing Si to the surface of the silicon substrate.
摘要翻译：在硅衬底上形成高K电介质膜的方法包括以下步骤：用稀氢氟酸处理硅衬底的表面，在用稀氢氟酸处理步骤之后，通过供给在所述硅衬底的表面上含有Hf和氮的金属有机源，并且在成核步骤之后通过CVD工艺形成Hf硅酸盐膜，通过将含有Hf的金属有机源和含Si的金属有机源供给到硅衬底的表面。

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