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1. 发明专利

JP2005047136A Manufacturing method of precast concrete 审中-公开
标题翻译：预制混凝土的制造方法
公开(公告)号：JP2005047136A
公开(公告)日：2005-02-24
申请号：JP2003281103
申请日：2003-07-28
申请人： Maeda Corp , Koji Teranishi , 前田建設工業株式会社 , 浩司寺西
发明人： EGUCHI KIYOSHI , NAKAGOME AKIRA , SUGIYAMA EISUKE , TERANISHI KOJI
IPC分类号： C04B18/16 , B28B11/24 , C04B28/02
CPC分类号： Y02W30/95
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of precast concrete capable of easily obtaining precast concrete reduced in drying contraction even if regenerated aggregate, to which raw mortar and raw cement paste are bonded in large quantities, is used and enabling the production of precast concrete inexpensive as compared with high-degree treatment because the regenerated aggregate is manufactured by a simple treatment process. SOLUTION: In the manufacturing method of precast concrete containing the regenerated aggregate, concrete containing the regenerated aggregate is cast and subsequently aged in an autoclave. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种预制混凝土的制造方法，其能够容易地获得减少干燥收缩的预制混凝土，即使使用大量粘合了生砂浆和生水泥糊的再生骨料，由于再生骨料通过简单的处理工艺制造，因此与高度处理相比，预制混凝土的生产便宜。解决方案：在含有再生骨料的预制混凝土的制造方法中，将含有再生骨料的混凝土铸造并随后在高压釜中陈化。版权所有（C）2005，JPO＆NCIPI

2. 发明申请

US20110129659A1 METHOD OF PRODUCING AN OPTICAL DEVICE 审中-公开
标题翻译：生产光学器件的方法
公开(公告)号：US20110129659A1
公开(公告)日：2011-06-02
申请号：US12953841
申请日：2010-11-24
申请人： Koji Teranishi , Shinji Fukui , Keisui Banno
发明人： Koji Teranishi , Shinji Fukui , Keisui Banno
IPC分类号： B05D5/06 , B32B3/26
CPC分类号： G02B1/113 , G02B1/12 , G02B2207/107 , Y10T428/24997
摘要： An optical device that includes a low refractive index film is produced at a low cost. To attain this object, in a process of producing an optical device that includes a multilayer film in which low refractive index films and high refractive index films are alternately laminated, a porous film is formed on a substrate by a sputtering deposition system which uses a target unit. The porous film is immersed in a liquid to lower the refractive index of the film. By forming in simple steps a low refractive index film that is lower in refractive index than conventionally used films, a high quality optical device can be obtained at a low cost.
摘要翻译：以低成本制造包括低折射率膜的光学装置。为了实现这个目的，在制造包括交替层叠有低折射率膜和高折射率膜的多层膜的光学器件的工艺中，通过使用靶材的溅射沉积系统在基板上形成多孔膜单元。将多孔膜浸入液体中以降低膜的折射率。通过以简单的步骤形成折射率低于常规使用的膜的低折射率膜，可以以低成本获得高质量的光学器件。

3. 发明授权

US07035000B2 Antireflection film and optical element having the same 失效
公开(公告)号：US07035000B2
公开(公告)日：2006-04-25
申请号：US11144641
申请日：2005-06-06
申请人： Hidehiro Kanazawa , Kenji Ando , Koji Teranishi
发明人： Hidehiro Kanazawa , Kenji Ando , Koji Teranishi
IPC分类号： G02B5/08 , G02B1/10
CPC分类号： G02B1/115
摘要： An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

4. 发明授权

US06947209B2 Antireflection film and optical element having the same 失效
标题翻译：防反射膜和具有其的光学元件
公开(公告)号：US06947209B2
公开(公告)日：2005-09-20
申请号：US10424912
申请日：2003-04-29
申请人： Hidehiro Kanazawa , Kenji Ando , Koji Teranishi
发明人： Hidehiro Kanazawa , Kenji Ando , Koji Teranishi
IPC分类号： G02B1/11 , B32B7/02 , G02B1/115 , F21V9/04
CPC分类号： G02B1/115
摘要： An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.
摘要翻译：抗反射膜包括交替沉积的高折射率层和低折射率层。这些层的折射率和消光系数使得即使其几何厚度小，抗反射膜也具有足够的抗反射特性。在基板上具有抗反射膜的光学元件显示高透射率并且具有优异的光学特性。

5. 发明授权

US06333079B1 Plasma CVD process 有权
标题翻译：等离子体CVD工艺
公开(公告)号：US06333079B1
公开(公告)日：2001-12-25
申请号：US09874251
申请日：2001-06-06
申请人： Satoshi Takaki , Koji Teranishi
发明人： Satoshi Takaki , Koji Teranishi
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producing high-frequency electrode a high-frequency power having an oscillation frequency in the range of from 30 MHz to 600 MHz, generated by a high-frequency power source, and an exhaust means for exhausting a gas remaining in the reactor after the reaction; the high-frequency power generated in the high-frequency power source being supplied to the plasma-producing high-frequency electrode to cause a plasma to take place across a substrate held by the substrate holding means and the plasma-producing high-frequency electrode to form a deposited film on the substrate; the phase of reflected power is adjusted on the plasma-producing high-frequency electrode at its part on the opposite side of the feeding point. High-quality deposited films having a very uniform film thickness and a homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes, to obtain semiconductor devices in a good efficiency.
摘要翻译：在等离子体CVD系统中，包括其内部可被抽真空的反应器，设置在反应器中的基板保持装置，用于向反应器供应用于等离子体CVD的原料气体的材料气体供给装置，用于向等离子体产生高频电极供给具有由高频电源产生的振荡频率在30MHz至600MHz范围内的高频功率;以及排气装置，用于排出残留在所述高频电源中的气体反应后反应; 在高频电源中产生的高频电力被供给到等离子体产生高频电极，以使等离子体在由基板保持装置和等离子体产生高频电极保持的基板上发生，在基板上形成沉积膜;在等离子体产生高频电极的馈电点相对侧的部分调整反射功率的相位。可以在具有任何形状的大面积基板上以高速率和稳定地形成具有非常均匀的膜厚度和均匀膜质量的高质量沉积膜，从而以高效率获得半导体器件。

6. 发明授权

US6152071A High-frequency introducing means, plasma treatment apparatus, and plasma treatment method 失效
标题翻译：高频引入装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US6152071A
公开(公告)日：2000-11-28
申请号：US988137
申请日：1997-12-10
申请人： Kazuyoshi Akiyama , Atsushi Yamagami , Satoshi Takaki , Koji Teranishi
发明人： Kazuyoshi Akiyama , Atsushi Yamagami , Satoshi Takaki , Koji Teranishi
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/24 , C23C16/509 , H01J37/32082
摘要： A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.
摘要翻译：提供了一种高频引入装置，其包括具有用于通过高频功率产生等离子体的棒或板形状的高频电极，以及调节机构，用于调节与高电位相反的电极端部之间的电抗绝对值电极的高频功率引入点和接地部分。使用上述高频引入装置也提供了等离子体处理装置和等离子体处理方法。通过调整电抗的绝对值，在大面积的基底构件上以高速度，以高度均匀的质量稳定有效地形成高品质的沉积膜。

7. 发明授权

US6145469A Plasma processing apparatus and processing method 失效
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US6145469A
公开(公告)日：2000-11-14
申请号：US853449
申请日：1997-05-09
申请人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
发明人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
IPC分类号： H05H1/46 , C23C14/34 , C23C16/50 , C23C16/505 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L31/20 , C23C16/00
CPC分类号： H01J37/32091 , C23C14/34 , C23C16/507 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.
摘要翻译：等离子体处理装置具有设置在能够降低压力的反应容器中的基板保持件，用于放置待处理的基板，用于将工艺气体供给到反应容器中的装置，通过匹配电路从高频波电源到反应容器内部的频率波功率，其特征在于反应容器的至少一部分由电介质构成，阴极电极布置在外部使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。等离子体工艺包括CVD，溅射，蚀刻或灰化。

8. 发明授权

US09481595B2 Method of producing optical element forming mold and optical element forming mold 有权
标题翻译：光学元件成型模具和光学元件成型模具的制造方法
公开(公告)号：US09481595B2
公开(公告)日：2016-11-01
申请号：US13643159
申请日：2011-05-25
申请人： Hiroyuki Kubo , Shigeru Hashimoto , Keiji Hirabayashi , Koji Teranishi , Yusuke Owaki
发明人： Hiroyuki Kubo , Shigeru Hashimoto , Keiji Hirabayashi , Koji Teranishi , Yusuke Owaki
IPC分类号： B29D11/00 , C03B11/08 , C23C14/06 , C23C14/32 , G02B3/04
CPC分类号： C03B11/086 , C03B2215/12 , C03B2215/24 , C03B2215/72 , C23C14/0605 , C23C14/325 , G02B3/04
摘要： Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.
摘要翻译：提供一种光学元件形成模具的制造方法，该方法包括通过FCVA工艺在用于光学元件成型模具的模具基体10上形成ta-C膜12，其中模具基体10保持在浮动电位，通过绝缘构件（3a，3b）将电压施加到用于保持模具基体的模具基体保持构件2，并且内部设置在模具基体中的磁体4形成用于沿法线方向施加磁力的磁场的模具基体的转印表面，以便遵循由过滤器线圈22施加的磁力，从而使膜质量均匀化。

9. 发明授权

US07575661B2 Reactive sputtering method 失效
标题翻译：反应溅射法
公开(公告)号：US07575661B2
公开(公告)日：2009-08-18
申请号：US10898956
申请日：2004-07-27
申请人： Yasuyuki Suzuki , Koji Teranishi
发明人： Yasuyuki Suzuki , Koji Teranishi
IPC分类号： C23C14/35
CPC分类号： H01J37/3485 , C23C14/0057 , C23C14/0068 , C23C14/0694 , C23C14/35 , F02D41/1456 , H01J37/3405 , Y02T50/67
摘要： In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.
摘要翻译：在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和底物。该装置被构造成朝向基板发射反应性气体。反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。当目标移动时，移动反应气体发射端口或改变反应气体发射位置。可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。

10. 发明申请

US20090200159A1 REACTIVE SPUTTERING METHOD 审中-公开
标题翻译：反应溅射法
公开(公告)号：US20090200159A1
公开(公告)日：2009-08-13
申请号：US12415259
申请日：2009-03-31
申请人： Yasuyuki Suzuki , Koji Teranishi
发明人： Yasuyuki Suzuki , Koji Teranishi
IPC分类号： C23C14/34
CPC分类号： H01J37/3485 , C23C14/0057 , C23C14/0068 , C23C14/0694 , C23C14/35 , F02D41/1456 , H01J37/3405 , Y02T50/67
摘要： In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.
摘要翻译：在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和底物。该装置被构造成朝向基板发射反应性气体。反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。当目标移动时，移动反应气体发射端口或改变反应气体发射位置。可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。

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