会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Content addressable memory (CAM) for data lookups in a data processing system
    • 内容可寻址存储器(CAM),用于数据处理系统中的数据查找
    • US07061782B2
    • 2006-06-13
    • US09962052
    • 2001-09-24
    • Klaus Helwig
    • Klaus Helwig
    • G11C15/00
    • G11C15/04
    • Power consumption is reduced in a content addressable memory of a data processing system or a data processor. The content addressable memory includes at least a first single bit storage (101; 301), a word line (WL), at least one bit write line (BLWT, BLWC) and a hit/miss line (H/M), and at least a first single bit compare circuit (201; 320), the first single bit storage including at least a first output (A; A0) and the first single bit compare circuit including at least a first compare bit input (BLCT; CB 0) and two field effect transistors (113, 114; 312, 313). In order to reduce the power consumption, the first output (A; A0) of the single bit storage (101; 301) is applied to the gate of only one, a first field effect transistor (114; 312) of the two field effect transistors (113, 114; 312, 313). For an additional reduction of the power consumption, two single bit storages (101, 301) are connected to a shared compare circuit (319). In case of a mismatch, only one out of four compare nodes (C0, C1, C2, C3) of the shared compare circuit is switched high, i.e. changes its potential.
    • 数据处理系统或数据处理器的内容可寻址存储器中的功耗降低。 内容可寻址存储器至少包括第一单个位存储器(101; 301),字线(WL),至少一个位写入线(BLWT,BLWC)和命中/未命中线(H / M) 至少第一单比特比较电路(201; 320),所述第一单比特存储器至少包括第一输出(A; A 0)和所述第一单比特比较电路至少包括第一比较比特输入(BLCT; CB 0 )和两个场效应晶体管(113,114; 312,313)。 为了降低功耗,单位存储器(101; 301)的第一输出(A; A 0)被施加到仅一个的栅极,两个场的第一场效应晶体管(114; 312) 效应晶体管(113,114; 312,313)。 为了进一步降低功耗,两个单位存储器(101,301)连接到共享比较电路(319)。 在不匹配的情况下,共享比较电路的四个比较节点(C 0,C 1,C 2,C 3)中只有一个被切换为高电平,即改变其电位。
    • 7. 发明授权
    • Decoding circuit arrangement for redundant semiconductor storage systems
    • 用于冗余半导体存储系统的解码电路装置
    • US4811298A
    • 1989-03-07
    • US87489
    • 1987-08-20
    • Klaus HelwigWolfdieter LohleinMinh H. Tong
    • Klaus HelwigWolfdieter LohleinMinh H. Tong
    • G11C11/408G11C11/401G11C29/00G11C29/04G11C13/00
    • G11C29/83G11C29/84
    • A decoding process and a decoding circuit arrangement for a redundant semiconductor memory is described, wherein the advantages of parallelly selecting non-defective word lines and redundant word lines at a low level are utilized for the writing as well as for the reading current in such a manner that high speed reading and writing is not affected. This is achieved in that the decoder for the redundant word lines consists of a comparator circuit and fuse-controlled switches, and that the input addresses are applied to a conventional address decoder as well as to the comparator circuit. The output of the comparator circuit is directly connected to the input of a first driver circuit for the redundant word line, and furthermore to an OR circuit which is also controlled by a read/write control circuit, and which is connected to the decoder and to a clamp circuit that is directly connected to the input of a second word line driver circuit, and continuously maintains the potential following a deselect signal applied on that level, which requires a minimum of power.
    • 描述了用于冗余半导体存储器的解码处理和解码电路装置,其中以低电平并行选择无缺陷字线和冗余字线的优点用于写入以及读取电流 高速读写方式不受影响。 这是因为用于冗余字线的解码器由比较器电路和熔丝控制开关组成,并且输入地址被施加到常规地址解码器以及比较器电路。 比较器电路的输出直接连接到用于冗余字线的第一驱动器电路的输入,并且还连接到也由读/写控制电路控制并且连接到解码器的OR电路, 钳位电路,其直接连接到第二字线驱动器电路的输入,并且连续地保持该电平上施加的取消选择信号的电位,其需要最小功率。