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1. 发明授权

US08774572B2 Bistable element 失效
标题翻译：双稳态元素
公开(公告)号：US08774572B2
公开(公告)日：2014-07-08
申请号：US13551245
申请日：2012-07-17
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： G02B6/42
CPC分类号： G02F3/024 , G02F1/3523 , G02F2001/217 , H01S5/0601 , H01S5/0653 , H01S5/1007 , H01S5/22 , H01S5/2275
摘要： A bistable element (100) comprising: a multi-mode interference optical waveguide (1), has two ports on one edge face (1a) thereof, and has one port on the other edge face (1b) thereof; a first group of optical waveguides (2), and each of which is composed of two optical waveguides each having one edge face connected to each port arranged on the one edge face (1a) side of the multi-mode interference optical waveguide (1); and a second group of optical waveguides (3), and each of which is composed of one optical waveguide having one edge face connected to each port arranged on the other edge face (1b) side of the multi-mode interference optical waveguide (1). The multi-mode interference optical waveguide (1) has a saturable absorption region (22) where the absorption coefficient is reduced to cause the saturation of the amount of absorbed light when the intensity of incident light becomes high.
摘要翻译：一种双稳态元件（100），包括：多模干涉光波导（1），在其一个边缘面（1a）上具有两个端口，并且在其另一个边缘面（1b）上具有一个端口; 第一组光波导（2），并且每个光波导由两个光波导组成，每个光波导具有连接到布置在多模干涉光波导（1）的一个边缘面（1a）侧的每个端口的一个边缘面， ; 以及第二组光波导（3），其中每一个由一个光波导构成，该光波导具有连接到多模干涉光波导（1）的另一边缘面（1b）侧的每个端口的一个边缘面，。多模干涉光波导（1）具有饱和吸收区域（22），其中吸收系数降低时，当入射光的强度变高时，吸收光量的饱和。

2. 发明授权

US5770466A Semiconductor optical integrated circuits and method for fabricating the same 失效
标题翻译：半导体光集成电路及其制造方法
公开(公告)号：US5770466A
公开(公告)日：1998-06-23
申请号：US400570
申请日：1995-03-08
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L21/20
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device has a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on an entire surface of the passive region by the metal organic vapor phase epitaxy and the epitaxial layers have a mesa structure in the active region and a plane structure in the passive region. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in the active and passive regions. The second mask pattern has a constant width. In the active region, the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer are provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件具有包括有源区和被动区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在无源区的整个表面上同时且非选择性地生长，并且外延层在有源区中具有台面结构和在被动区中具有平面结构。通过在由有源和无源区域中提供的第二掩模图案限定的第二选择性增长区域上的金属有机气相外延选择性地生长具有脊状结构的覆层。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

3. 发明授权

US5565693A Semiconductor optical integrated circuits 失效
标题翻译：半导体光集成电路
公开(公告)号：US5565693A
公开(公告)日：1996-10-15
申请号：US179049
申请日：1994-01-07
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L33/00
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on the entirety of the passive region by metal organic vapor phase epitaxy and epitaxial layers having a mesa structure in the active region and a plane structure in the passive region are formed. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in both the active and passive regions. The second mask pattern has a constant width. In the active region the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer is provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件包括包括有源区和无源区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在整个无源区上同时且非选择性地生长，并且在有源区中具有台面结构并形成无源区中的平面结构的外延层。具有脊状结构的包覆层通过金属有机气相外延选择性地生长在由在有源区域和被动区域中提供的第二掩模图案限定的第二选择性增长区域上。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

4. 发明申请

US20090103852A1 ANALYZING ELEMENT AND ANALYZING APPARATUS USING SAME 有权
标题翻译：分析元件和使用相同的分析仪器
公开(公告)号：US20090103852A1
公开(公告)日：2009-04-23
申请号：US12293294
申请日：2007-03-16
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： G02B6/00
CPC分类号： G01N21/031 , A61B5/097 , G01N33/497
摘要： An analyzing element (10) is provided with a sample chamber (11) into which a gas or liquid sample is introduced; detection light waveguides (12a, 12b) arranged adjacent to the sample chamber (11) for guiding detection light for detecting a sample; and a detection light inputting section (13) for inputting the detection light, which is traveling in a direction along the detection light waveguides (12a, 12b), into the detection light waveguides (12a, 12b) from the end surface of the detection light waveguides (12a, 12b). The detection light waveguides (12a, 12b) have an exposed surface (14) exposed in the sample chamber (11).
摘要翻译：分析元件（10）设置有样品室（11），气体或液体样品被引入其中; 与所述样品室（11）相邻布置的用于引导用于检测样品的检测光的检测光波导（12a，12b）以及检测光输入部（13），用于将沿着检测光波导（12a，12b）的方向行进的检测光从检测光的端面输入到检测光波导（12a，12b）波导（12a，12b）。检测光波导（12a，12b）具有暴露在样品室（11）中的暴露表面（14）。

5. 发明授权

US07466736B2 Semiconductor laser diode, semiconductor optical amplifier, and optical communication device 失效
标题翻译：半导体激光二极管，半导体光放大器和光通讯器件
公开(公告)号：US07466736B2
公开(公告)日：2008-12-16
申请号：US11573625
申请日：2005-06-29
申请人： Kiichi Hamamoto , Jan De Merlier
发明人： Kiichi Hamamoto , Jan De Merlier
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1003 , H01S5/1014 , H01S5/1039 , H01S5/1064 , H01S5/2206 , H01S5/2222 , H01S5/34306 , H01S5/50
摘要： To provide a semiconductor laser diode and a semiconductor optical amplifier and an optical communication device incorporating the semiconductor laser diode or the semiconductor optical amplifier which enable low power consumption and high optical output. A semiconductor laser diode according to an embodiment of the present invention is a semiconductor laser diode 100 comprised of an active waveguide, the active waveguide including a first waveguide 11a that supplies a plurality of modes including a fundamental mode; and a second waveguide 12a that is wider than the first waveguide 11a and supplies a multimode, wherein the fundamental mode is provided as an oscillation light oscillated from the active waveguide.
摘要翻译：提供半导体激光二极管和半导体光放大器以及结合半导体激光二极管或半导体光放大器的光通信装置，其能够实现低功耗和高光输出。根据本发明的实施例的半导体激光二极管是由有源波导构成的半导体激光二极管100，该有源波导包括提供包括基本模式在内的多个模式的第一波导11a; 以及比第一波导11a宽的第二波导12a，并且提供多模，其中基模作为从有源波导振荡的振荡光提供。

6. 发明授权

US07262435B2 Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same 失效
标题翻译：具有多模波导区域的单横模激光二极管及其制造方法相同
公开(公告)号：US07262435B2
公开(公告)日：2007-08-28
申请号：US10752565
申请日：2004-01-08
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： H01L27/15
CPC分类号： H01S5/10 , H01S5/0655 , H01S5/1064 , H01S5/2036 , H01S5/2272
摘要： A laser diode with a single-transverse-mode output having a laser cavity comprising both single-mode and multi-mode waveguide portions, and a method of manufacturing such a laser diode are disclosed. There are a pair of single transverse waveguide regions at opposite ends of a multi-mode waveguide. The multi-mode waveguide is a 1×1 multi-mode interference waveguide, with a wider width than the single-mode portions. Use of the multi-mode region improves the power output, threshold current density, and overall efficiency in comparison to a similarly constructed laser diode in which the entire laser cavity is single-mode.
摘要翻译：具有单横模输出的激光二极管具有包括单模和多模波导部分的激光腔，以及制造这种激光二极管的方法。在多模波导的相对端有一对单横波导区域。多模波导是1x1多模干涉波导，其宽度比单模部分宽。与其中整个激光腔是单模的类似构造的激光二极管相比，使用多模式区域提高了功率输出，阈值电流密度和总体效率。

7. 发明授权

US06813068B2 Semiconductor optical amplifier and semiconductor laser 失效
标题翻译：半导体光放大器和半导体激光器
公开(公告)号：US06813068B2
公开(公告)日：2004-11-02
申请号：US10127557
申请日：2002-04-23
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： H01S300
CPC分类号： H01S5/50 , H01S5/1064 , H01S5/227
摘要： A semiconductor optical amplifier includes (a) a single-mode waveguide region which provides a single-mode to a guided light-wave, (b) a first multi-mode interference waveguide region which has a greater waveguide width than that of the single-mode waveguide region, is optically connected to the single-mode waveguide region, and provides a mode including a multi-mode, to the guided light-wave, and (c) a second multi-mode interference waveguide region which has a greater waveguide width than that of the first multi-mode interference waveguide region, is optically connected to the first multi-mode interference waveguide region, and provides a mode including a multi-mode, to the guided light-wave.
摘要翻译：半导体光放大器包括（a）向导光波提供单模的单模波导区域，（b）第一多模干涉波导区域，其波导宽度大于单导波导区域，模式波导区域光学连接到单模波导区域，并且向导光波提供包括多模的模式，以及（c）具有较大波导宽度的第二多模干涉波导区域与第一多模干涉波导区域相比，光学连接到第一多模干涉波导区域，并且向引导光波提供包括多模式的模式。

8. 发明申请

US20100040323A1 SUPER-LUMINESCENT LIGHT EMITTING DIODE 有权
标题翻译：超级发光二极管
公开(公告)号：US20100040323A1
公开(公告)日：2010-02-18
申请号：US12450347
申请日：2008-03-21
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： G02B6/12 , G02B6/26
CPC分类号： H01L33/0045
摘要： To provide a super luminescent light emitting diode comprising an optical waveguide structure which supplies particularly-high optical output. The super-luminescent light emitting diode includes: a first optical waveguide, of which one end is optically connected to one end of a multimode interference optical waveguide, and of which the other end forms a first light emitting edge; and a second optical waveguide, of which one end is optically connected to the other end of the multimode interference optical waveguide, and of which the other end forms a second light emitting edge. Each of the first and second optical waveguides has a width smaller than the width of the multimode interference optical waveguide.
摘要翻译：提供一种包括提供特别高的光输出的光波导结构的超发光发光二极管。超发光发光二极管包括：第一光波导，其一端光学连接到多模干涉光波导的一端，另一端形成第一发光边缘; 以及第二光波导，其一端光学连接到多模干涉光波导的另一端，另一端形成第二发光边缘。第一和第二光波导中的每一个具有小于多模干涉光波导的宽度的宽度。

9. 发明申请

US20070258495A1 Semiconductor Laser Diode, Semiconductor Optical Amplifier, and Optical Communication Device 失效
标题翻译：半导体激光二极管，半导体光放大器和光通信设备
公开(公告)号：US20070258495A1
公开(公告)日：2007-11-08
申请号：US11573625
申请日：2005-06-29
申请人： Kiichi Hamamoto , Jan De Merlier
发明人： Kiichi Hamamoto , Jan De Merlier
IPC分类号： H01S5/10
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1003 , H01S5/1014 , H01S5/1039 , H01S5/1064 , H01S5/2206 , H01S5/2222 , H01S5/34306 , H01S5/50
摘要： To provide a semiconductor laser diode and a semiconductor optical amplifier and an optical communication device incorporating the semiconductor laser diode or the semiconductor optical amplifier which enable low power consumption and high optical output. A semiconductor laser diode according to an embodiment of the present invention is a semiconductor laser diode 100 comprised of an active waveguide, the active waveguide including a first waveguide 11a that supplies a plurality of modes including a fundamental mode; and a second waveguide 12a that is wider than the first waveguide 11a and supplies a multimode, wherein the fundamental mode is provided as an oscillation light oscillated from the active waveguide.
摘要翻译：提供半导体激光二极管和半导体光放大器以及结合半导体激光二极管或半导体光放大器的光通信装置，其能够实现低功耗和高光输出。根据本发明的实施例的半导体激光二极管是由有源波导构成的半导体激光二极管100，该有源波导包括提供多个基本模式的模式的第一波导11a，以及比第一波导11a更宽的第二波导12a，并且提供多模，其中基模作为从有源波导振荡的振荡光提供。

10. 发明授权

US06661960B2 Semiconductor waveguide photodetector 失效
标题翻译：半导体波导光电探测器
公开(公告)号：US06661960B2
公开(公告)日：2003-12-09
申请号：US09135527
申请日：1998-08-18
申请人： Kiichi Hamamoto
发明人： Kiichi Hamamoto
IPC分类号： G02B610
CPC分类号： G02B6/12007 , G02B6/136 , G02B6/2813
摘要： A semiconductor waveguide photodetector having a high receiving efficiency has single mode light transmitted as the incident light signal. The semiconductor waveguide photodetector includes a 1×1 multi mode interference (MMI) light waveguide region, and two single mode waveguide regions, each of which is connected at an end to the multi mode region. The length of the multi mode waveguide region is about 100 &mgr;m and the lengths of the single mode waveguide region are about 10 &mgr;m. The width of multimode waveguide region is 6 &mgr;m and those of single mode waveguide regions are 1.5 &mgr;m. The semiconductor waveguide photodetector detects and filters the incident light in the same material within the multiple mode region.
摘要翻译：具有高接收效率的半导体波导光电检测器具有作为入射光信号传输的单模光。半导体波导光电检测器包括1x1多模干涉（MMI）光波导区域和两个单模波导区域，每个单模波导区域在多模式区域的末端连接。多模波导区域的长度约为100微米，单模波导区域的长度约为10微米。多模波导区域的宽度为6μm，单模波导区域的宽度为1.5μm。半导体波导光电检测器在多模式区域内检测并过滤相同材料中的入射光。

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