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    • 1. 发明申请
    • ETCHING METHOD AND METHOD FOR PERFORMING SURFACE PROCESSING ON SOLID MATERIAL FOR SOLAR CELL
    • 用于对太阳能电池进行固体表面处理的蚀刻方法和方法
    • US20140234198A1
    • 2014-08-21
    • US14237948
    • 2012-08-10
    • Mizuho MoritaJunichi UchikoshiKentaro TsukamotoTakabumi NagaiKenji Adachi
    • Mizuho MoritaJunichi UchikoshiKentaro TsukamotoTakabumi NagaiKenji Adachi
    • H01L31/0236H01L31/18
    • H01L31/02366H01L31/02363H01L31/18Y02E10/50
    • Provided is an etching method including: (1) bringing a material containing at least one organic compound having an N—F bond into contact with the surface of a solid material; and (2) a step of heating the solid material; whereby etching can be performed safely and in a simple manner, at a higher etching rate, without the use of a high-environmental-load gas that causes global warming or highly reactive and toxic fluorine gas or hydrofluoric acid. The etching method may further include: (3) a step of exposing the solid material to light from the side of the material containing at least one organic compound having an N—F bond; and (4) a step of removing the material containing at least one organic compound having an N—F bond together with the residue remained between said material and the solid material. In particular, performing heating at a high temperature and applying light irradiation make it possible to form inverted pyramid-shaped recesses that are suitable for applying light-trapping and/or anti-reflection processing to the surface of the solid material for a solar cell.
    • 提供一种蚀刻方法,包括:(1)使含有至少一种具有N-F键的有机化合物的材料与固体材料的表面接触; 和(2)加热固体材料的步骤; 从而能够以更高的蚀刻速度安全地且以简单的方式执行蚀刻,而不使用引起全球变暖的高环境负荷气体或高反应性和有毒的氟气或氢氟酸。 蚀刻方法可以进一步包括:(3)将固体材料从含有至少一种具有N-F键的有机化合物的材料侧暴露于光的步骤; 和(4)除去含有至少一种具有N-F键的有机化合物的材料与残留物在所述材料和固体材料之间的步骤。 特别是,在高温下进行加热并施加光照射使得可以形成适于对太阳能电池的固体材料的表面进行光捕获和/或抗反射处理的倒棱锥形凹部。