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    • 6. 发明申请
    • Precise, in-situ endpoint detection for charged particle beam processing
    • 用于带电粒子束处理的精确的原位端点检测
    • US20050109956A1
    • 2005-05-26
    • US10984096
    • 2004-11-09
    • Theodore LundquistKenneth Wilsher
    • Theodore LundquistKenneth Wilsher
    • H01J37/304H01J37/305H01J27/00
    • H01J37/304H01J37/3056
    • A system and method for determining precisely in-situ the endpoint of halogen-assisted charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip packaged IC. The backside of the IC is mechanically thinned. Optionally, a coarse trench is then milled in the thinned backside of the IC using either laser chemical etching or halogen-assisted charged particle beam milling. A further small trench is milled using a halogen-assisted charged-particle beam (electron or ion beam). The endpoint for milling this small trench is determined precisely by monitoring the power supply leakage current of the IC induced by electron-hole pairs created by the milling process. A precise in-situ endpoint detection signal is generated by modulating the beam at a reference frequency and then amplifying that frequency component in the power supply leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The precise, in-situ, endpoint signal is processed and displayed for manual or automatic precise in-situ endpoint detection. This approach avoids or minimizes unintentional damage or perturbation of the active diffusion regions in the IC. A range of further operations on the IC can then be performed.
    • 用于准确地确定倒装芯片封装IC的衬底的背面中的空穴或沟槽的卤素辅助带电粒子束铣削的终点的系统和方法。 IC的背面机械变薄。 可选地,使用激光化学蚀刻或卤素辅助带电粒子束研磨,在IC的薄化背面中研磨粗沟槽。 使用卤素辅助带电粒子束(电子或离子束)研磨另外的小沟槽。 通过监测由铣削过程产生的电子 - 空穴对引起的IC的电源漏电流,精确地确定了用于铣削该小沟槽的端点。 通过以参考频率调制光束然后用放大器,窄带放大器或锁定放大器放大该电源漏电流中的该频率分量来产生精确的原位端点检测信号。 精确的原位端点信号被处理和显示用于手动或自动精确的原位端点检测。 该方法避免或最小化IC中的有源扩散区域的无意的损坏或扰动。 然后可以执行IC上的一系列进一步的操作。
    • 9. 发明申请
    • Laser probing system for integrated circuits
    • 集成电路激光探测系统
    • US20070046947A1
    • 2007-03-01
    • US11261996
    • 2005-10-27
    • William LoKenneth WilsherNagamani NatarajNina Boiadjieva
    • William LoKenneth WilsherNagamani NatarajNina Boiadjieva
    • G01B9/02
    • G01R31/307
    • A system for probing a DUT is disclosed, the system having a pulsed laser source, a CW laser source, beam optics designed to point a reference beam and a probing beam at the same location on the DUT, optical detectors for detecting the reflected reference and probing beams, and a collection electronics. The beam optics is a common-path polarization differential probing (PDP) optics. The common-path PDP optics divides the incident laser beam into two beams of orthogonal polarization - one beam simulating a reference beam while the other simulating a probing beam. Both reference and probing beams are pointed to the same location on the DUT. Due to the intrinsic asymmetry of a CMOS transistor, the interaction of the reference and probing beams with the DUT result in different phase modulation in each beam. This difference can be investigated to study the response of the DUT to the stimulus signal.
    • 公开了一种用于探测DUT的系统,该系统具有脉冲激光源,CW激光源,设计用于将DUT上的相同位置处的参考光束和探测光束指向的光束光学元件,用于检测反射参考的光学检测器和 探测梁和收集电子设备。 光束光学器件是公共路径偏振微分探测(PDP)光学器件。 公共路径PDP光学器件将入射激光束分成两束正交偏振光束 - 一个模拟参考光束的光束,另一个模拟探测光束。 参考和探测光束都指向DUT上相同的位置。 由于CMOS晶体管的固有不对称性,参考光束和探测光束与DUT的相互作用导致每个光束中的不同相位调制。 可以研究这种差异来研究DUT对刺激信号的响应。