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1. 发明授权

US07561277B2 MEMS fiber optic microphone 有权
标题翻译： MEMS光纤麦克风
公开(公告)号：US07561277B2
公开(公告)日：2009-07-14
申请号：US11750643
申请日：2007-05-18
申请人： Ken K. Chin , Guanhua Feng , Harry Roman
发明人： Ken K. Chin , Guanhua Feng , Harry Roman
IPC分类号： G01B9/02
CPC分类号： G01L9/0079 , G01H9/004
摘要： The theory, design, fabrication, and characterization of MEMS (micro electrical mechanical system) Fabry-Perot diaphragm-fiber optic microphone are described in the present invention. By using MEMS technology in processing and packaging, a square 1.9 mm×1.9 mm, 2 μ thick SiO2 diaphragm with a 350 μ square embossed center of silicon is mechanically clamped to the ferrule of a single mode fiber to keep its closeness (5 μ) and perpendicular orientation with respect to the diaphragm. Static measurement of optical output power versus the pressure on membrane reveals more than one period of Fabry-Perot interference, thereby generating a Fabry-Perot diaphragm-fiber interferometer device accurately reproducing audible acoustic wave.
摘要翻译：在本发明中描述了MEMS（微机电系统）法布里 - 珀罗隔膜 - 光纤麦克风的理论，设计，制造和表征。通过在加工和封装中使用MEMS技术，将一个方形的1.9mm×1.9mm的2μm厚的SiO 2隔膜与350μm方形的压花中心的硅片机械地夹紧到单模光纤的套圈上，以保持其接近（5μ）并且相对于隔膜垂直取向。光输出功率与膜上压力的静态测量显示了Fabry-Perot干涉的多于一个周期，从而生成准确再现声音波的法布里 - 珀罗光纤干涉仪。

2. 发明授权

US07697797B2 Aligned embossed diaphragm based fiber optic sensor 失效
标题翻译：对准压花隔膜基光纤传感器
公开(公告)号：US07697797B2
公开(公告)日：2010-04-13
申请号：US12237744
申请日：2008-09-25
申请人： Ken K Chin , Guanhua Feng , Ivan Padron , Harry Roman
发明人： Ken K Chin , Guanhua Feng , Ivan Padron , Harry Roman
IPC分类号： G02B6/00 , G02B6/12 , G02B6/26 , G02B6/32 , G02B6/42 , G02B6/38 , G01B9/02
CPC分类号： G01J9/02 , G01H9/004 , G01J2009/023 , G01L9/0079
摘要： The present invention is a diaphragm-fiber optic sensor (DFOS), interferometric sensor. This DFOS is based on the principles of Fabry-Perot and Michelson/Mach-Zehnder. The sensor is low cost and is designed with high efficiency, reliability, and Q-point stability, fabricated using MEMS (micro mechanic-electrical system) technology, and has demonstrated excellent performance. A DFOS according to the invention includes a cavity between two surfaces: a diaphragm made of silicon or other material with a rigid body (or boss) at the center and clamped along its edge, and the endface of a single mode optic fiber. By utilizing MEMS technology, the gap width between the diaphragm and the fiber endface is made accurately, ranging from 1 micron to 10 microns. To stabilize the Q-point of the DFOS when in use as an acoustic sensor, a system of microchannels is built in the structure of the diaphragm so that the pressure difference on two sides of the diaphragm is kept a constant, independent of the hydraulic pressure and/or low frequency noise when the device is inserted in liquid mediums.
摘要翻译：本发明是一种隔膜光纤传感器（DFOS），干涉式传感器。该DFOS基于法布里 - 珀罗和迈克尔逊/马赫 - 曾德的原理。传感器成本低，采用MEMS（微机电系统）技术制造，具有高效率，可靠性和Q点稳定性设计，并表现出优异的性能。根据本发明的DFOS包括两个表面之间的空腔：由硅或其它材料制成的隔膜，其中心处具有刚性体（或凸起）并沿着其边缘夹持，并且单模光纤的端面。通过利用MEMS技术，隔膜和光纤端面之间的间隙宽度精确地制成，范围从1微米到10微米。为了在用作声学传感器时稳定DFOS的Q点，在隔膜的结构中建立了微通道系统，使隔膜两侧的压差保持恒定，与液压无关和/或当设备插入液体介质时的低频噪声。

3. 发明授权

US06630669B1 Correlated modulation imaging (CMI) 失效
标题翻译：相关调制成像（CMI）
公开(公告)号：US06630669B1
公开(公告)日：2003-10-07
申请号：US09536856
申请日：2000-03-28
申请人： Ken K. Chin , Haijiang Ou
发明人： Ken K. Chin , Haijiang Ou
IPC分类号： G02F101
CPC分类号： G01J5/10 , G11C27/026
摘要： In the present invention of Correlated Modulation Imaging (CMI), the weak optical image signal (and therefore the signal current) is modulated, and the signal integration direction is correlated to the modulation. Therefore, the dark and/or background current, which are not modulated, are cancelled, while the signal current is integrated. As a result, the total integration time of the signal of each pixel is increased, and its signal to noise ratio and dynamic range are improved. Besides, the CMI noise spectrum peaks at the modulation frequency, and therefore, the detector's 1/f and other low frequency noises can be suppressed. In the present invention, the method and theory of CMI, as well as the means and steps for the realization of CMI, are explicitly developed. Two versions of CMOS devices (CMI unit pre-amplifier version 1 and 3), with their circuitry design and testing data are presented as the critical component for correlated modulation imaging. A prototype chip of the CMI circuitries has been fabricated by the MOSIS 0.5-micron foundry. SPICE circuitry simulation has demonstrated the functioning of CMI unit pre-amplifier version 1 and 3 as designed. Experimental work has demonstrated the functioning of CMI unit pre-amplifier version 1 as designed, as well as the key features of CMI—increase of integration time, and improvement of signal to noise ratio and dynamic range.
摘要翻译：在相关调制成像（CMI）的本发明中，弱光学图像信号（因此信号电流）被调制，并且信号积分方向与调制相关。因此，在信号电流被积分的同时，未被调制的暗和/或背景电流被消除。结果，每个像素的信号的总积分时间增加，并且其信噪比和动态范围得到改善。此外，CMI噪声频谱在调制频率处峰值，因此可以抑制检测器的1 / f和其他低频噪声。在本发明中，CMI的方法和理论以及实现CMI的手段和步骤被明确地开发出来。 CMOS设备（CMI单元前置放大器版本1和3）的两个版本，其电路设计和测试数据被呈现为相关调制成像的关键组件。 CMI电路的原型芯片由MOSIS 0.5微米铸造厂制造。 SPICE电路仿真已经证明了CMI单元前置放大器版本1和3的功能设计。实验工作展示了CMI单元前置放大器版本1的功能设计，以及CMI增加集成时间的关键特性，提高了信噪比和动态范围。

4. 发明授权

US08883549B2 p-Doping of CdTe polycrystalline thin film based on Cd vacancy theory 有权
标题翻译：基于Cd空位理论的CdTe多晶薄膜的p掺杂
公开(公告)号：US08883549B2
公开(公告)日：2014-11-11
申请号：US13164836
申请日：2011-06-21
申请人： Ken K. Chin
发明人： Ken K. Chin
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/073
CPC分类号： H01L31/073 , H01L31/02963 , H01L31/1828 , Y02E10/543
摘要： Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (VCd) and subsequently substituting a high density of substitutional defects and/or defect complexes for the Cd vacancies that were created. Formation of a high density of substitutional defects and defect complexes as a p-dopant can improve light-to-electricity conversion efficiency, doping levels or hole concentrations, junction band bending, and/or ohmic contact associated with p-type CdTe (p-CdTe) based solar cells.
摘要翻译：本公开的示例性实施方案旨在改进用于CdTe基太阳能电池（例如硫化镉（CdS）/ CdTe）太阳能电池的碲化镉（CdTe）的p型掺杂（p掺杂）。实施例可以通过产生高密度的镉（Cd）空位（VCd）并随后用高密度的取代缺陷和/或缺陷复合物代替所产生的镉空位来实现改进的CdTe的p掺杂。形成作为p掺杂剂的高密度替代缺陷和缺陷复合物可以提高光电转换效率，掺杂水平或空穴浓度，结带弯曲和/或与p型CdTe（p- CdTe）太阳能电池。

5. 发明申请

US20090015239A1 Transmission Line Sensor 审中-公开
标题翻译：传输线传感器
公开(公告)号：US20090015239A1
公开(公告)日：2009-01-15
申请号：US12041228
申请日：2008-03-03
申请人： George E. Georgiou , Ken K. Chin , Raymond Ferraro , Guanhua Feng , Karen Gail Noe
发明人： George E. Georgiou , Ken K. Chin , Raymond Ferraro , Guanhua Feng , Karen Gail Noe
IPC分类号： G01R19/32
CPC分类号： G01R15/14
摘要： A system and method in which an overhead high voltage transmission line sensor system is able to measure one or more of temperature, current, and line sag for a conductor within a high voltage transmission line system. The sensor system may be able to clamp to a transmission conductor or splice, harvest power from the transmission line, and/or transmit data corresponding to measurements of current, temperature, and line sag.
摘要翻译：架空高压传输线传感器系统能够测量高压输电线路系统内的导体的温度，电流和线路下垂的一个或多个的系统和方法。传感器系统可以能够夹紧到传输导体或接头，从传输线收集功率，和/或发送与电流，温度和线路下垂的测量相对应的数据。

6. 发明申请

US20120042950A1 p-Doping of CdTe Polycrystalline Thin Film Based on Cd Vacancy Theory 有权
标题翻译：基于Cd空位理论的CdTe多晶薄膜的p掺杂
公开(公告)号：US20120042950A1
公开(公告)日：2012-02-23
申请号：US13164836
申请日：2011-06-21
申请人： Ken K. Chin
发明人： Ken K. Chin
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/073 , H01L31/02963 , H01L31/1828 , Y02E10/543
摘要： Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (VCd) and subsequently substituting a high density of substitutional defects and/or defect complexes for the Cd vacancies that were created. Formation of a high density of substitutional defects and defect complexes as a p-dopant can improve light-to-electricity conversion efficiency, doping levels or hole concentrations, junction band bending, and/or ohmic contact associated with p-type CdTe (p-CdTe) based solar cells.
摘要翻译：本公开的示例性实施方案旨在改进用于CdTe基太阳能电池（例如硫化镉（CdS）/ CdTe）太阳能电池的碲化镉（CdTe）的p型掺杂（p掺杂）。实施例可以通过产生高密度的镉（Cd）空位（VCd）并随后用高密度的取代缺陷和/或缺陷复合物代替所产生的镉空位来实现改进的CdTe的p掺杂。形成作为p掺杂剂的高密度替代缺陷和缺陷复合物可以提高光电转换效率，掺杂水平或空穴浓度，结带弯曲和/或与p型CdTe（p- CdTe）太阳能电池。

7. 发明申请

US20090086214A1 ALIGNED EMBOSSED DIAPHRAGM BASED FIBER OPTIC SENSOR 失效
标题翻译：对准基于印刷电路图的光纤传感器
公开(公告)号：US20090086214A1
公开(公告)日：2009-04-02
申请号：US12237744
申请日：2008-09-25
申请人： Ken K. Chin , Guanhua Feng , Ivan Pardon , Harry Roman
发明人： Ken K. Chin , Guanhua Feng , Ivan Pardon , Harry Roman
IPC分类号： G01B9/02 , B29D11/00
CPC分类号： G01J9/02 , G01H9/004 , G01J2009/023 , G01L9/0079
摘要： The present invention is a diaphragm-fiber optic sensor (DFOS), interferometric sensor. This DFOS is based on the principles of Fabry-Perot and Michelson/Mach-Zehnder. The sensor is low cost and is designed with high efficiency, reliability, and Q-point stability, fabricated using MEMS (micro mechanic-electrical system) technology, and has demonstrated excellent performance. A DFOS according to the invention includes a cavity between two surfaces: a diaphragm made of silicon or other material with a rigid body (or boss) at the center and clamped along its edge, and the endface of a single mode optic fiber. By utilizing MEMS technology, the gap width between the diaphragm and the fiber endface is made accurately, ranging from 1 micron to 10 microns. To stabilize the Q-point of the DFOS when in use as an acoustic sensor, a system of microchannels is built in the structure of the diaphragm so that the pressure difference on two sides of the diaphragm is kept a constant, independent of the hydraulic pressure and/or low frequency noise when the device is inserted in liquid mediums.
摘要翻译：本发明是一种隔膜光纤传感器（DFOS），干涉式传感器。该DFOS基于法布里 - 珀罗和迈克尔逊/马赫 - 曾德的原理。传感器成本低，采用MEMS（微机电系统）技术制造，具有高效率，可靠性和Q点稳定性设计，并表现出优异的性能。根据本发明的DFOS包括两个表面之间的空腔：由硅或其它材料制成的隔膜，其中心处具有刚性体（或凸起）并沿其边缘夹持，并且单模光纤的端面。通过利用MEMS技术，隔膜和光纤端面之间的间隙宽度精确地制成，范围从1微米到10微米。为了在用作声学传感器时稳定DFOS的Q点，在隔膜的结构中建立了微通道系统，使隔膜两侧的压差保持恒定，与液压无关和/或当设备插入液体介质时的低频噪声。

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