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1. 发明申请

US20120175604A1 LIQUID ORGANIC SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：液体有机半导体材料
公开(公告)号：US20120175604A1
公开(公告)日：2012-07-12
申请号：US13496451
申请日：2010-09-15
申请人： Jun-ichi Hanna , Keiji Tokunaga , Hiroaki Iino
发明人： Jun-ichi Hanna , Keiji Tokunaga , Hiroaki Iino
IPC分类号： H01L51/30
CPC分类号： H01L51/5012 , H01L51/0052 , H01L51/42 , H01L51/5048 , Y02E10/549
摘要： An organic material having at least one aromatic conjugated π-electron system is selected. The purity of the organic material is improved by purification, and a conduction mechanism of the organic material is confirmed by a time-of-flight method, whereby a liquid phase of the organic material is usable as an organic semiconductor. A method that enables the usage of a liquid phase of an organic material as an organic semiconductor is provided. The method involves confirming the electronic conduction of the organic material having at least one aromatic conjugated π-electron system by evaluation of a charge transport property using a time-of-flight method, and by evaluation of a dilution effect caused by addition of a diluent.
摘要翻译：选择具有至少一个芳族共轭＆电子体系的有机材料。通过纯化改善有机材料的纯度，通过飞行时间法确认有机材料的传导机理，由此有机材料的液相可用作有机半导体。提供了能够使有机材料的液相作为有机半导体的方法。该方法包括通过使用飞行时间方法评价电荷传输性质，以及通过评估通过添加一种电子传递性质而引起的稀释效应来确认具有至少一种芳香族共轭电子体系的有机材料的电子传导冲淡。

2. 发明授权

US07229703B2 Gas barrier substrate 有权
标题翻译：阻气性基材
公开(公告)号：US07229703B2
公开(公告)日：2007-06-12
申请号：US10810541
申请日：2004-03-26
申请人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
发明人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： C23C14/024 , H01L27/322 , H01L51/5253 , H01L2251/5338 , Y10S428/917 , Y10T428/12007 , Y10T428/12493 , Y10T428/24355 , Y10T428/24479
摘要： The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要翻译：本发明的主要目的在于提供阻气层中阻气性高，阻气性不好，针孔等的阻气性基材。本发明通过提供一种具有基材，形成在基材上的平坦化层的阻气性基材和包含在平坦化层上形成的沉积膜的阻气层来解决该问题。

3. 发明授权

US07442428B2 Gas barrier substrate 有权
标题翻译：阻气性基材
公开(公告)号：US07442428B2
公开(公告)日：2008-10-28
申请号：US11595769
申请日：2006-11-10
申请人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
发明人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
IPC分类号： G11B5/64 , B32B3/00
CPC分类号： C23C14/024 , H01L27/322 , H01L51/5253 , H01L2251/5338 , Y10S428/917 , Y10T428/12007 , Y10T428/12493 , Y10T428/24355 , Y10T428/24479
摘要： The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要翻译：本发明的主要目的在于提供阻气层中阻气性高，阻气性不好，针孔等的阻气性基材。本发明通过提供一种具有基材，形成在基材上的平坦化层的阻气性基材和包含在平坦化层上形成的沉积膜的阻气层来解决该问题。

4. 发明申请

US20050029513A1 Gas barrier substrate 有权
标题翻译：阻气性基材
公开(公告)号：US20050029513A1
公开(公告)日：2005-02-10
申请号：US10810541
申请日：2004-03-26
申请人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
发明人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
IPC分类号： C23C14/02 , H01L27/32 , H01L51/52 , H01L35/24 , H01L51/00
CPC分类号： C23C14/024 , H01L27/322 , H01L51/5253 , H01L2251/5338 , Y10S428/917 , Y10T428/12007 , Y10T428/12493 , Y10T428/24355 , Y10T428/24479
摘要： The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要翻译：本发明的主要目的在于提供阻气层中阻气性高，阻气性不好，针孔等的阻气性基材。本发明通过提供一种具有基材，形成在基材上的平坦化层的阻气性基材和包含在平坦化层上形成的沉积膜的阻气层来解决该问题。

5. 发明申请

US20070059491A1 Gas barrier substrate 有权
公开(公告)号：US20070059491A1
公开(公告)日：2007-03-15
申请号：US11595769
申请日：2006-11-10
申请人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
发明人： Sayaka Kawashima , Minoru Komada , Keiji Tokunaga
IPC分类号： G11B5/64
CPC分类号： C23C14/024 , H01L27/322 , H01L51/5253 , H01L2251/5338 , Y10S428/917 , Y10T428/12007 , Y10T428/12493 , Y10T428/24355 , Y10T428/24479
摘要： The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.

6. 发明申请

US20060231832A1 Liquid crystalline organic compound, organic semiconductor structure, organic semiconductor device, and process for producing liquid crystalline organic compound 审中-公开
标题翻译：液晶有机化合物，有机半导体结构，有机半导体器件，以及液晶有机化合物的制造方法
公开(公告)号：US20060231832A1
公开(公告)日：2006-10-19
申请号：US11370779
申请日：2006-03-08
申请人： Keiji Tokunaga , Yudai Yamashita , Jun-ichi Hanna
发明人： Keiji Tokunaga , Yudai Yamashita , Jun-ichi Hanna
IPC分类号： H01L29/08
CPC分类号： H01L51/0076 , C07D277/66 , C09K19/3477 , C09K19/3497 , C09K19/40 , C09K2019/3408 , H01L51/0069 , H01L51/0545
摘要： A liquid crystalline organic compound which gives a liquid crystal phase in a temperature range containing at least a room temperature and can exhibit a high charge mobility; an organic semiconductor structure and an organic semiconductor device each having the liquid crystalline organic compound are provided. The liquid crystalline organic compound contains any one of benzothiazole, benzoselenazole, benzoxazole and indene skeletons represented by the following chemical formula 1: wherein A is a nitrogen atom or a CH group, and B is a sulfur, selenium or oxygen atom is contained as Z1 in the following chemical formula 2: R1-Y1-Z1-Y2-R2 2 wherein, R1 and R2 are each independently a saturated or unsaturated hydrocarbon of a straight chain, a branched chain or a cyclic structure having 1 to 22 carbon atoms; R1 and R2 may be each independently bonded directly to Z1 without interposing Y1 or Y2 therebetween; and Y1 and Y2 are each independently selected from the group consisting of oxygen and selenium atoms and —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCOO and —CH2 groups.
摘要翻译：一种液晶有机化合物，其在至少包含室温的温度范围内产生液晶相，并且可表现出高的电荷迁移率; 提供了具有液晶有机化合物的有机半导体结构和有机半导体器件。液晶性有机化合物含有以下化学式1表示的苯并噻唑，苯并硒唑，苯并恶唑和茚骨架中的任一种：其中A为氮原子或CH基团，B为硫，硒或氧原子为Z1 在以下化学式2中：<？in-line-formula description =“In-line formula”end =“lead”？> R1-Y1-Z1-Y2-R2 2 <？in-line-formula description =“In 其中，R 1和R 2各自独立地为具有1至22个碳原子的直链，支链或环状结构的饱和或不饱和烃; R1和R2可以各自独立地键合到Z1而不插入Y1或Y2; 并且Y 1和Y 2各自独立地选自氧和硒原子和-CO - ， - OCO - ， - COO - ， - N-CH - ， - CONH - ， - NH - ， - NHCOO和-CH SUB> 2 组。

7. 发明授权

US06866949B2 Substrate film, gas barrier film, and display using the same 有权
标题翻译：底物膜，阻气膜和使用其的显示器
公开(公告)号：US06866949B2
公开(公告)日：2005-03-15
申请号：US10382368
申请日：2003-03-06
申请人： Yurie Ota , Toshio Yoshihara , Keiji Tokunaga , Minoru Komada
发明人： Yurie Ota , Toshio Yoshihara , Keiji Tokunaga , Minoru Komada
IPC分类号： B32B27/06 , C08J7/04 , G02F1/1333 , H01L51/52 , H05B33/04 , B32B15/08
CPC分类号： C08J7/045 , B32B27/06 , G02F1/133345 , H01L51/0096 , H01L51/52 , H01L51/5253 , H01L2251/5338 , H05B33/04 , Y02E10/549 , Y10T428/10 , Y10T428/1086 , Y10T428/266 , Y10T428/269 , Y10T428/31507 , Y10T428/31663 , Y10T428/31678
摘要： The present invention provides a gas barrier film comprising a composite film provided with a gas barrier layer having a laminated structure including at least a metal oxide thin layer on a substrate film having a (1) 80 ppm/° C. or less coefficient of thermal expansion at 50° C. to 150° C. and/or a 10 ppm/% RH or less coefficient of humidity expansion at 25° C., and a (2) 150 C. ° or more glass transition temperature, and a display with a display element covered with the same.
摘要翻译：本发明提供一种气体阻隔膜，其具有设置有阻气层的复合膜，所述阻气层具有层叠结构，所述层叠结构在基板膜上至少含有金属氧化物薄膜，所述基板膜具有（1）80ppm /℃以下的热分散系数在25℃至150℃下膨胀，和/或10ppm /％RH或更低的25℃湿度膨胀系数和（2）150℃或更高的玻璃化转变温度，以及显示器具有覆盖的显示元件。

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