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    • 2. 发明申请
    • PROCESS FOR APPLYING A METAL COATING TO A NON-CONDUCTIVE SUBSTRATE
    • 将金属涂层应用于非导电性基材的方法
    • WO2011035921A1
    • 2011-03-31
    • PCT/EP2010/005851
    • 2010-09-22
    • ATOTECH DEUTSCHLAND GMBHWU, Wei, JiePAN, Ke, Liang
    • WU, Wei, JiePAN, Ke, Liang
    • C23C18/31C23C18/40C23C18/54
    • C25D5/10C25D3/38C25D5/56
    • Described is a new process for applying a metal coating to a non-conductive substrate comprising the steps of (a) contacting the substrate with an activator comprising a noble metal/group IVA metal sol to obtain a treated substrate, (b) contacting said treated substrate with a composition comprising a solution of: (i) a Cu(II), Ag, Au or Ni soluble metal salt or mixtures thereof, (ii) 0.05 to 5 mol/l of a group IA metal hydroxide and (iii) a complexing agent for an ion of the metal of said metal salt comprising an organic material having a cumulative formation constant log K of from about 0.73 to about 21.95 for an ion of the metal of said metal salt, characterised in that the composition according to step (b) is treated with an electrical current for a period of time prior to and / or during contacting said solution with the substrate.
    • 描述了将金属涂层施加到非导电基底上的新方法,其包括以下步骤:(a)使基底与包含贵金属/ⅣA族金属溶胶的活化剂接触以获得经处理的基底,(b)使所述经处理的 底物,其组合物包含以下溶液:(i)Cu(II),Ag,Au或Ni可溶性金属盐或其混合物,(ii)0.05至5mol / l的IA族金属氢氧化物和(iii) 所述金属盐的金属离子的络合剂包含对于所述金属盐的金属的离子,累积形成常数log K为约0.73至约21.95的有机材料,其特征在于根据步骤( b)在与基底接触所述溶液之前和/或期间用电流处理一段时间。
    • 3. 发明申请
    • GATE DRIVING DEVICE FOR LIQUID CRYSTAL DISPLAY
    • 液晶显示器门驱动装置
    • US20090058781A1
    • 2009-03-05
    • US12125202
    • 2008-05-22
    • Yubo XUBongyeol RYUKe LIANGLiang YAN
    • Yubo XUBongyeol RYUKe LIANGLiang YAN
    • G09G3/36
    • G09G3/3677G09G2300/0408G11C19/28
    • The invention relates to a gate driving device for Thin Film Transistor liquid crystal display comprising: a plurality of shift registers directly deposited on an array substrate, said shift registers being composed of effect transistors and a capacitor, obtaining a gate driving signal voltage by controlling an input signal. Said shift register can be realized by 5-layer mask process or 4-layer mask process, by arranging the field effect transistors on the margin part outside the active region on the substrate or at the edge of the substrate, and then directly depositing them on an array substrate. The invention obtains a gate driving signal voltage by the shift registers directly deposited on the substrate, thus overcoming the shortage of the need of driving chips and film layers in the prior art, substantially reducing the production cost for LCD.
    • 本发明涉及一种用于薄膜晶体管液晶显示器的栅极驱动装置,包括:直接沉积在阵列基板上的多个移位寄存器,所述移位寄存器由效应晶体管和电容器组成,通过控制栅极驱动信号电压获得栅极驱动信号电压 输入信号。 所述移位寄存器可以通过5层掩模处理或4层掩模处理来实现,通过将场效应晶体管布置在衬底上或基板边缘的有源区域之外的边界部分上,然后将它们直接放置在 阵列基板。 本发明通过直接沉积在衬底上的移位寄存器获得栅极驱动信号电压,从而克服了现有技术中驱动芯片和膜层的需求的不足,从而大大降低了LCD的生产成本。
    • 5. 发明申请
    • PROCESS FOR APPLYING A METAL COATING TO A NON-CONDUCTIVE SUBSTRATE
    • 将金属涂层应用于非导电性基材的方法
    • US20120160697A1
    • 2012-06-28
    • US13394165
    • 2010-09-22
    • Wei Jie WuKe Liang Pan
    • Wei Jie WuKe Liang Pan
    • C25D5/34
    • C25D5/10C25D3/38C25D5/56
    • Described is a new process for applying a metal coating to a non-conductive substrate comprising the steps of (a) contacting the substrate with an activator comprising a noble metal/group IVA metal sol to obtain a treated substrate, (b) contacting said treated substrate with a composition comprising a solution of: (i) a Cu(II), Ag, Au or Ni soluble metal salt or mixtures thereof, (ii) 0.05 to 5 mol/l of a group IA metal hydroxide and (iii) a complexing agent for an ion of the metal of said metal salt comprising an organic material having a cumulative formation constant log K of from about 0.73 to about 21.95 for an ion of the metal of said metal salt, characterised in that the composition according to step (b) is treated with an electrical current for a period of time prior to and/or during contacting said solution with the substrate.
    • 描述了将金属涂层施加到非导电基底上的新方法,其包括以下步骤:(a)使基底与包含贵金属/ⅣA族金属溶胶的活化剂接触以获得经处理的基底,(b)使所述经处理的 底物,其组合物包含以下溶液:(i)Cu(II),Ag,Au或Ni可溶性金属盐或其混合物,(ii)0.05至5mol / l的IA族金属氢氧化物和(iii) 所述金属盐的金属离子的络合剂包含对于所述金属盐的金属离子具有约0.73至约21.95的累积形成常数log K的有机材料,其特征在于根据步骤( b)在与基底接触所述溶液之前和/或期间用电流处理一段时间。
    • 7. 发明授权
    • Gate driving device for liquid crystal display
    • 液晶显示器门驱动装置
    • US08130189B2
    • 2012-03-06
    • US12125202
    • 2008-05-22
    • Yubo XuBongyeol RyuKe LiangLiang Yan
    • Yubo XuBongyeol RyuKe LiangLiang Yan
    • G09G3/36
    • G09G3/3677G09G2300/0408G11C19/28
    • The invention relates to a gate driving device for Thin Film Transistor liquid crystal display comprising: a plurality of shift registers directly deposited on an array substrate, said shift registers being composed of effect transistors and a capacitor, obtaining a gate driving signal voltage by controlling an input signal. Said shift register can be realized by 5-layer mask process or 4-layer mask process, by arranging the field effect transistors on the margin part outside the active region on the substrate or at the edge of the substrate, and then directly depositing them on an array substrate. The invention obtains a gate driving signal voltage by the shift registers directly deposited on the substrate, thus overcoming the shortage of the need of driving chips and film layers in the prior art, substantially reducing the production cost for LCD.
    • 本发明涉及一种用于薄膜晶体管液晶显示器的栅极驱动装置,包括:直接沉积在阵列基板上的多个移位寄存器,所述移位寄存器由效应晶体管和电容器组成,通过控制栅极驱动信号电压获得栅极驱动信号电压 输入信号。 所述移位寄存器可以通过5层掩模处理或4层掩模处理来实现,通过将场效应晶体管布置在衬底上或基板边缘的有源区域之外的边界部分上,然后将它们直接放置在 阵列基板。 本发明通过直接沉积在衬底上的移位寄存器获得栅极驱动信号电压,从而克服了现有技术中驱动芯片和膜层的需求的不足,从而大大降低了LCD的生产成本。