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1. 发明授权

US4814288A Method of fabricating semiconductor devices which include vertical elements and control elements 失效
标题翻译：制造包括垂直元件和控制元件的半导体器件的方法
公开(公告)号：US4814288A
公开(公告)日：1989-03-21
申请号：US72164
申请日：1987-07-10
申请人： Masatoshi Kimura , Takeaki Okabe , Isao Yoshida , Kouzou Sakamoto , Kazuo Hoya , Kouichiro Satonaka , Toyomasa Koda , Shigeo Ohtaka
发明人： Masatoshi Kimura , Takeaki Okabe , Isao Yoshida , Kouzou Sakamoto , Kazuo Hoya , Kouichiro Satonaka , Toyomasa Koda , Shigeo Ohtaka
IPC分类号： H01L27/08 , H01L21/331 , H01L21/76 , H01L21/8222 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/73 , H01L29/732 , H01L29/78 , H01L21/20 , H01L21/302
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A method of fabricating semiconductor devices which include vertical elements and control elements. A well is formed by etching in a semiconductor substrate of a first conductivity type, and a first epitaxial layer having a second conductivity type opposite to the first conductivity type is epitaxially grown, followed by etching and/or grinding and/or polishing to fill said well. Further, a second epitaxial layer of the first conductivity type is epitaxially grown on the substrate and on the first epitaxial layer, and an impurity-doped layer of the second conductivity type for isolation is formed in the second epitaxial layer to penetrate therethrough. A first element is formed in the second epitaxial layer in a portion that corresponds to the well, and a second element having a vertical structure and having a current capability higher than that of the first element is formed except a portion of the second epitaxial layer that corresponds to the well.
摘要翻译：一种制造包括垂直元件和控制元件的半导体器件的方法。通过在第一导电类型的半导体衬底中蚀刻形成阱，并且外延生长具有与第一导电类型相反的第二导电类型的第一外延层，随后进行蚀刻和/或研磨和/或抛光以填充所述好。此外，第一导电类型的第二外延层在衬底和第一外延层上外延生长，并且在第二外延层中形成用于隔离的第二导电类型的杂质掺杂层以穿透其中。在对应于阱的部分中的第二外延层中形成第一元件，并且除了第二外延层的一部分之外，形成具有比第一元件的电流能力高的垂直结构并具有电流能力的第二元件，对应于井。

2. 发明授权

US3969748A Integrated multiple transistors with different current gains 失效
标题翻译：集成多个具有不同电流增益的晶体管
公开(公告)号：US3969748A
公开(公告)日：1976-07-13
申请号：US475179
申请日：1974-05-31
申请人： Noboru Horie , Kazuo Hoya
发明人： Noboru Horie , Kazuo Hoya
IPC分类号： H01L21/8222 , H01L21/331 , H01L21/8224 , H01L27/082 , H01L29/73 , H01L29/735 , H01L27/02 , H01L27/04 , H01L29/72
CPC分类号： H01L27/0821 , H01L27/0825 , H01L29/735 , Y10S148/02 , Y10S148/038 , Y10S148/085 , Y10S148/096 , Y10S148/136 , Y10S148/151 , Y10S257/914
摘要： A multiple transistor consists of vertical and lateral transistors, the collector region of the lateral transistor is formed by diffusion within the diffused base region of the vertical transistor simultaneously with the emitter region of the vertical transistor, into a structure in which the base of the vertical transistor and the collector of the lateral transistor are short-circuited. As a result the current gain of the lateral transistor can be varied by changing the area of the collector region.
摘要翻译：多晶体管由垂直和横向晶体管构成，横向晶体管的集电极区域由与垂直晶体管的发射极区同时垂直晶体管的扩散基极区域内的扩散形成为垂直晶体管的基极的结构晶体管和横向晶体管的集电极短路。结果，可以通过改变集电极区域的面积来改变横向晶体管的电流增益。

3. 发明授权

US4672411A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US4672411A
公开(公告)日：1987-06-09
申请号：US681026
申请日：1984-12-13
申请人： Isao Shimizu , Kazuo Hoya
发明人： Isao Shimizu , Kazuo Hoya
IPC分类号： H01L29/84 , G01L9/00 , H01L27/20
CPC分类号： G01L9/0054 , G01L9/0042
摘要： Disclosed is a pressure sensor having a diaphragm formed in a semiconductor body, the diaphragm having at least one pair of pressure sensing semiconductor strips in a major surface thereof. One end of each of the strips is connected to each other by a semiconductor region. The semiconductor region is formed in a direction of small piezoresistive coefficients, and the strips are formed in a direction of great piezoresistive coefficients. Also, the region has a smaller resistance than the resistance of the strips. Also, electrode lead-out regions are provided at the other ends of the strips, which regions have low resistance, extend in a direction of small piezoresistive coefficients, and extend beyond the edge of the diaphram so the electrodes contact the semiconductor body outside the diaphragm. According to the present invention, a pressure sensor of high sensitivity and high precision can be provided.
摘要翻译：公开了一种具有形成在半导体本体中的隔膜的压力传感器，所述隔膜在其主表面中具有至少一对压力感测半导体条。每个条带的一端通过半导体区域相互连接。半导体区域形成在小的压阻系数的方向上，并且条带形成在大的压阻系数的方向上。此外，该区域的电阻比条的电阻小。此外，电极引出区域设置在条带的另一端，该区域具有低电阻，沿小的压阻系数的方向延伸，并且延伸超过膜的边缘，使得电极与隔膜外部的半导体本体接触。根据本发明，可以提供高灵敏度和高精度的压力传感器。

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