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    • 2. 发明申请
    • GATE DRIVING CIRCUIT
    • 门驱动电路
    • US20120299625A1
    • 2012-11-29
    • US13480758
    • 2012-05-25
    • Kazuki SASAKI
    • Kazuki SASAKI
    • H03K17/61
    • H03K17/567H03K5/19H03K17/691H03K2217/0036
    • A gate driving circuit includes a control power; a transformer having a primary winding and a secondary winding; a first switching element; a second switching element; a rectifying element; and a capacitance element, wherein the first switching element is connected between the control power and one end of the primary winding, and the second switching element is connected to the other end of the primary winding, wherein one end of the capacitance element is connected to either one of the one end and the other end of the primary winding, and wherein, when one of the first switching element and the second switching element is turned on, the capacitance element is charged by the control power, and when the other of the first switching element and the second switching element is turned on, the capacitance element is discharged.
    • 门驱动电路包括控制电源; 变压器,其具有初级绕组和次级绕组; 第一开关元件; 第二开关元件; 整流元件 以及电容元件,其中所述第一开关元件连接在所述一次绕组的所述控制功率与所述一端之间,所述第二开关元件连接到所述初级绕组的另一端,其中所述电容元件的一端连接到 初级绕组的一端和另一端中的任一个,并且其中当第一开关元件和第二开关元件中的一个导通时,电容元件由控制电源充电,并且当另一个 第一开关元件和第二开关元件导通,电容元件被放电。
    • 7. 发明申请
    • LOAD DRIVING CIRCUIT
    • 负载驱动电路
    • US20120126861A1
    • 2012-05-24
    • US13299034
    • 2011-11-17
    • Kazuki SASAKI
    • Kazuki SASAKI
    • H03K17/042
    • H03K17/04206H03K2217/0063
    • A load driving circuit in which the off-time Toff and the fall time Tf can be improved in turn-off operation of the N-channel type MOSFET used as a high side switch. The load driving circuit uses an N-channel type power MOSFET as a high side switch connected between a power supply and a load, including a comparator circuit for comparing a gate voltage of the power MOSFET with a power-supply voltage; and a shut-off circuit for discharging the gate terminal of the power MOSFET in turn-off operation of the power MOSFET, the rate of discharging the gate terminal of the power MOSFET performed with the shut-off circuit being set such that the discharge rate provided if the gate voltage Vg is lower than the power-supply voltage Vp is slower than the rate of discharging the same provided if the gate voltage Vg is higher than the power-supply voltage Vp.
    • 在用作高侧开关的N沟道型MOSFET的关断操作中,可以提高关断时间Toff和下降时间Tf的负载驱动电路。 负载驱动电路使用N沟道型功率MOSFET作为连接在电源和负载之间的高侧开关,包括用于将功率MOSFET的栅极电压与电源电压进行比较的比较器电路; 以及用于在功率MOSFET的关断操作中对功率MOSFET的栅极端子进行放电的截止电路,将由截止电路进行的功率MOSFET的栅极端子的放电率设定为使得放电率 如果栅极电压Vg低于电源电压Vp,则如果栅极电压Vg高于电源电压Vp,则比其放电速率慢。
    • 8. 发明申请
    • PROBE REAGENT FOR MEASURING OXIDATIVE STRESS
    • 用于测量氧化应激的探针试剂
    • US20110206615A1
    • 2011-08-25
    • US12920283
    • 2009-02-27
    • Atsushi MiyawakiKazuki Sasaki
    • Atsushi MiyawakiKazuki Sasaki
    • A61K49/00C12N15/63G01N33/53C12Q1/68C07K19/00C12N9/02C07H21/04C07H21/02
    • G01N33/5008A61K49/0017A61K49/0056A61K49/14A61K51/08A61K51/088C07K14/00C12Q1/28G01N21/6428G01N21/77G01N33/5014G01N33/84G01N2500/10
    • The present invention relates to fluorescent or luminescent probe reagents for measuring oxidative stress in a cell or an organism. Examples of the probe reagents include: a fluorescent or luminescent protein and a marker protein; a fluorescent or luminescent protein, a marker protein, and a regulatory factor; or a fluorescent or luminescent protein, a marker protein, a cleavage sequence, and a regulatory factor. In the probe reagents, the marker protein makes it possible to detect the oxidative stress caused by reactive oxygen species and comprises a regulatory factor-binding site and a ubiquitin-binding site; and the regulatory factor is a protein making it possible to regulate degradation of the marker protein in response to the reactive oxygen species. The present invention also relates to a method of measuring oxidative stress in a cell or an organism, or a method of screening a substance which suppresses or promotes the oxidative stress in a cell or an organism by using the probe reagent.
    • 本发明涉及用于测量细胞或生物体中的氧化应激的荧光或发光探针试剂。 探针试剂的实例包括:荧光或发光蛋白和标记蛋白; 荧光或发光蛋白,标记蛋白和调节因子; 或荧光或发光蛋白,标记蛋白,切割序列和调节因子。 在探针试剂中,标记蛋白使得可以检测由活性氧引起的氧化应激,并且包含调节因子结合位点和泛素结合位点; 并且调节因子是使得可以响应于活性氧来调节标记蛋白的降解的蛋白质。 本发明还涉及一种测定细胞或生物体中的氧化应激的方法,或者通过使用探针试剂筛选抑制或促进细胞或生物体中的氧化应激的物质的方法。