专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07981216B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07981216B2
公开(公告)日：2011-07-19
申请号：US10907023
申请日：2005-03-16
申请人： Keiji Ishibashi , Masahiko Tanaka , Akira Kumagai , Manabu Ikemoto , Katsuhisa Yuda
发明人： Keiji Ishibashi , Masahiko Tanaka , Akira Kumagai , Manabu Ikemoto , Katsuhisa Yuda
IPC分类号： C23C16/505
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565
摘要： A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.
摘要翻译：一种真空处理装置，包括反应器和具有多个通孔的分隔板，通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间，所述方法如成膜方法通过将气体输送到等离子体产生空间中以产生等离子体，在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行，并且通过分隔板上的多个通孔输送自由基进入基板工艺空间。分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板，并且在与分隔板上的多个通孔对应的位置具有自由通过孔。

2. 发明授权

US07392759B2 Remote plasma apparatus for processing substrate with two types of gases 有权
标题翻译：用于处理具有两种类型气体的基板的远程等离子体装置
公开(公告)号：US07392759B2
公开(公告)日：2008-07-01
申请号：US10978150
申请日：2004-10-29
申请人： Katsuhisa Yuda , Hiroshi Nogami
发明人： Katsuhisa Yuda , Hiroshi Nogami
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/452 , C23C16/45574 , H01J37/32357 , H01J37/32422
摘要： In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.
摘要翻译：在等离子体CVD装置中，形成有多个穿孔的板被布置成分离等离子体产生区域和处理区域。穿孔孔与孔板的孔径比不大于百分之五。等离子体产生区域中的氧（O 2 O 2）气体产生包括自由基和激发物质的等离子体，然后自由基和激发物质通过穿孔穿过处理区域。也可以在处理区域中供给单硅烷（SiH 4 S）气体，但通过该板抑制甲硅烷气体向等离子体产生区域的逆流。在处理区域中，自由基和被激发的物质和单硅烷气体导致气相反应，其产生在基板或晶片上形成的高质量的二氧化硅膜。

3. 发明授权

US07067436B2 Method of forming silicon oxide film and forming apparatus thereof 失效
公开(公告)号：US07067436B2
公开(公告)日：2006-06-27
申请号：US10832502
申请日：2004-04-27
申请人： Katsuhisa Yuda , Ge Xu
发明人： Katsuhisa Yuda , Ge Xu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/452 , C23C16/45557 , C23C16/45574 , C23C16/52
摘要： In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.

4. 发明申请

US20050217576A1 Vacuum Processing Apparatus 有权
标题翻译：真空处理设备
公开(公告)号：US20050217576A1
公开(公告)日：2005-10-06
申请号：US10907023
申请日：2005-03-16
申请人： Keiji Ishibashi , Masahiko Tanaka , Akira Kumagai , Manabu Ikemoto , Katsuhisa Yuda
发明人： Keiji Ishibashi , Masahiko Tanaka , Akira Kumagai , Manabu Ikemoto , Katsuhisa Yuda
IPC分类号： C23C16/505 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565
摘要： A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.
摘要翻译：一种真空处理装置，包括反应器和具有多个通孔的分隔板，通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间，所述方法如成膜方法通过将气体输送到等离子体产生空间中以产生等离子体，在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行，并且通过分隔板上的多个通孔输送自由基进入基板工艺空间。分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板，并且在与分隔板上的多个通孔对应的位置具有自由通过孔。

5. 发明授权

US06703267B2 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06703267B2
公开(公告)日：2004-03-09
申请号：US10231045
申请日：2002-08-30
申请人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
发明人： Hiroshi Tanabe , Katsuhisa Yuda , Hiroshi Okumura , Yoshinobu Sato
IPC分类号： H01L2100
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译：在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。这可以大大减少闸门泄漏的发生。由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小质量数量被包含在与栅电极的第二界面中和附近。

6. 发明授权

US06663715B1 Plasma CVD apparatus for large area CVD film 有权
标题翻译：用于大面积CVD膜的等离子体CVD装置
公开(公告)号：US06663715B1
公开(公告)日：2003-12-16
申请号：US09706818
申请日：2000-11-07
申请人： Katsuhisa Yuda , Manabu Ikemoto
发明人： Katsuhisa Yuda , Manabu Ikemoto
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/45519 , C23C16/5096 , H01J37/3244
摘要： A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes separating a plasma generation region and a substrate processing region. The plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate and is connected to the neutral gas introduction pipes. A plurality of neutral gas passage holes are provided for the lower electrode plate and the gas diffusing plates to supply neutral gas into the substrate processing region. A total opening area of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the upper electrode plate is smaller than that of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the lower electrode plate.
摘要翻译：等离子体CVD装置包括第一和第二电极，中性气体引入管和插入在分离等离子体产生区域和基板处理区域的第一和第二电极之间的等离子体约束电极。等离子体限制电极具有由上电极板和下电极板限定的中空结构，并连接到中性气体导入管。为下电极板和气体扩散板提供多个中性气体通道孔，以将中性气体供应到基板处理区域中。气体扩散板的上侧电极板侧的多个中性气体通过孔的总开口面积比下部电极板侧的气体扩散板的多个中性气体通过孔的总开口面积小。

7. 发明授权

US06281053B1 Thin film transistor with reduced hydrogen passivation process time 失效
标题翻译：具有减少氢钝化处理时间的薄膜晶体管
公开(公告)号：US06281053B1
公开(公告)日：2001-08-28
申请号：US09460114
申请日：1999-12-13
申请人： Katsuhisa Yuda
发明人： Katsuhisa Yuda
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L21/28123 , H01L21/3003 , H01L29/42384
摘要： A thin film field effect transistor includes source and drain regions, an active region sandwiched by the source and drain semiconductor regions. A gate insulating film is provided to cover the source and drain regions and the active region, and a semiconductor gate is formed on the gate insulating film above the active region. A gate electrode is formed on the semiconductor gate such that a non-covering portion where the gate electrode does not cover the semiconductor gate is formed.
摘要翻译：薄膜场效应晶体管包括源极和漏极区域，被源极和漏极半导体区域夹持的有源区域。提供栅极绝缘膜以覆盖源极和漏极区域和有源区域，并且在有源区域上方的栅极绝缘膜上形成半导体栅极。在半导体栅极上形成栅电极，使得栅电极不覆盖半导体栅极的非覆盖部分形成。

8. 发明授权

US07585708B2 Method for manufacturing a thin-film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07585708B2
公开(公告)日：2009-09-08
申请号：US11512596
申请日：2006-08-30
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L21/00
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

9. 发明申请

US20090202721A1 Method for Thin Film Formation 审中-公开
标题翻译：薄膜形成方法
公开(公告)号：US20090202721A1
公开(公告)日：2009-08-13
申请号：US11886317
申请日：2006-03-14
申请人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： C23C16/00 , C23C16/54
CPC分类号： C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided.The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.
摘要翻译：提供了一种薄膜形成方法，其可以在低温下形成在硅衬底和氧化硅膜之间具有良好界面性能并具有低界面陷阱密度的良好薄膜。用于薄膜形成的方法包括在真空容器内产生等离子体以产生活性物质（自由基），并使用该活性物质和材料气体在硅衬底上形成氧化硅膜，其中，除了材料气体之外，含氮原子气体在其成膜空间中被引入真空容器中，其中活性物质（自由基）和原料气体首次相互接触并且彼此反应以形成硅膜硅衬底，并且其中在硅衬底上形成氧化硅膜期间含氮原子气体的流速被调节为至少在开始形成硅膜时为最大值在硅衬底上。

10. 发明申请

US20070110918A1 REMOTE PLASMA APPARATUS FOR PROCESSING SUBSTRATE WITH TWO TYPES OF GASES 有权
标题翻译：用于加工具有两种类型气体的基板的远程等离子体设备
公开(公告)号：US20070110918A1
公开(公告)日：2007-05-17
申请号：US11620518
申请日：2007-01-05
申请人： Katsuhisa Yuda , Hiroshi Nogami
发明人： Katsuhisa Yuda , Hiroshi Nogami
IPC分类号： B05D3/00 , H05H1/24 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/452 , C23C16/45574 , H01J37/32357 , H01J37/32422
摘要： In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.
摘要翻译：在等离子体CVD装置中，形成有多个穿孔的板被布置成分离等离子体产生区域和处理区域。穿孔孔与孔板的孔径比不大于百分之五。等离子体产生区域中的氧（O 2 O 2）气体产生包括自由基和激发物质的等离子体，然后自由基和激发物质通过穿孔穿过处理区域。也可以在处理区域中供给单硅烷（SiH 4 S）气体，但通过该板抑制甲硅烷气体向等离子体产生区域的逆流。在处理区域中，自由基和被激发的物质和单硅烷气体导致气相反应，其产生在基板或晶片上形成的高质量的二氧化硅膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式