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1. 发明申请

WO2010020362A1 VERWENDUNG EINES TARGETS FÜR DAS FUNKENVERDAMPFEN UND VERFAHREN ZUM HERSTELLEN EINES FÜR DIESE VERWENDUNG GEEIGNETEN TARGETS 审中-公开
标题翻译：电弧蒸发和具体目标的方法用于生产适用于此用途的目标使用
公开(公告)号：WO2010020362A1
公开(公告)日：2010-02-25
申请号：PCT/EP2009/005803
申请日：2009-08-10
申请人： OERLIKON TRADING AG, TRÜBBACH , KURAPOV, Denis , LECHTHALER, Markus
发明人： KURAPOV, Denis , LECHTHALER, Markus
IPC分类号： C23C14/32 , C23C14/06 , C23C14/34 , C23C14/08
CPC分类号： C23C14/081 , C23C14/0641 , C23C14/325 , C23C14/3414 , H01J2237/20
摘要： Die Erfindung betrifft ein Verfahren zur Verwendung eines Targets für ein Beschichtungsverfahren von Metalloxid- und/oder Metallnitridschichten durch Funkenverdampfung, wobei das Target bei einer Temperatur betreibbar ist, die höher als der Schmelzpunktes des im Target verwendeten Metalls ist, und wobei das Target aus einem Metall besteht, dessen Oxide und/oder Nitride nicht elektrisch leitend sind. Darüber hinaus betrifft die Erfindung die Verwendung eines Targets, zum Herstellen von Metalloxidschichten und/oder Metallnitridschichten durch Funkenverdampfung, wobei das Target eine aus einem Metall bestehende Matrix aufweist, in welche elektrisch nicht leitende Oxide und/oder Nitride des Metalls eingebettet sind.
摘要翻译：本发明涉及一种用于使用目标为金属氧化物和/或金属氮化物通过电弧蒸发的涂覆方法，其中所述靶是可操作的以比在所述目标所使用的金属的熔点高的温度，并且其中所述目标由金属构成是，其氧化物和/或氮化物是不导电的。此外，本发明涉及使用一个目标的，用于制造金属氧化物和/或金属氮化物通过电弧汽化的方法，其中所述靶包括由其中金属的非导电氧化物和/或氮化物被嵌入的基质的金属。

2. 发明申请

WO2010040494A1 NON GAMMA - PHASE CUBIC ALCRO 审中-公开
标题翻译： NON GAMMA - PHASE CUBIC ALCRO
公开(公告)号：WO2010040494A1
公开(公告)日：2010-04-15
申请号：PCT/EP2009/007118
申请日：2009-10-05
申请人： OERLIKON TRADING AG, TRÜBBACH , KURAPOV, Denis
发明人： KURAPOV, Denis
IPC分类号： C23C30/00 , B23B27/00 , B23B27/02 , B23B27/08 , B23B27/14
CPC分类号： C22C14/00 , C22F1/18 , C23C14/0676 , C23C14/08 , C23C28/042 , C23C28/044 , C23C30/00 , C23C30/005
摘要： The present invention relates to a coating for workpieces with at least one layer, the at least one layer comprising metal components represented by AIxCr1-x wherein x is an atomic ratio meeting 0≤x≤0.84 and comprising non metallic components represented by 01-yZy where Z is at least one Element selected from the group N, B, C and 0≤y≤0.65, preferably y≤0.5 characterized in that the coating comprises at least partially a cubic non gamma Cr and oxide comprising phase in such a way that the x-ray diffraction pattern shows formation of cubic phase which is not the cubic phase of CrN.
摘要翻译：本发明涉及一种具有至少一层的工件涂层，所述至少一层包含由Al x Cr 1-x表示的金属组分，其中x是原子比满足0 = x = 0.84并且包含由01-yZy表示的非金属组分其中Z是选自组N，B，C和0 = y = 0.65，优选y = 0.5中的至少一个元素，其优选为y = 0.5，其特征在于涂层至少部分地包含立方体非γCr和包含相的氧化物， X射线衍射图显示不是CrN的立方相的立方相的形成。

3. 发明申请

WO2009056173A1 METHOD FOR MANUFACTURING A TREATED SURFACE AND VACUUM PLASMA SOURCES 审中-公开
标题翻译：用于制造处理表面和真空等离子体源的方法
公开(公告)号：WO2009056173A1
公开(公告)日：2009-05-07
申请号：PCT/EP2007/061805
申请日：2007-11-01
申请人： OERLIKON TRADING AG , RAMM, Juergen , WIDRIG, Beno , KURAPOV, Denis
发明人： RAMM, Juergen , WIDRIG, Beno , KURAPOV, Denis
IPC分类号： H01J37/32
CPC分类号： C23C14/54 , C23C14/0036 , C23C14/228 , C23C14/35 , C23C14/351 , H01J37/32009 , H01J37/32055 , H01J37/32477 , H01J37/32541
摘要： When treating workpiece or substrate surfaces with the help of a vacuum plasma discharge between an anode (9) and an cathode (7= and whereby due to such treatment a solid (19) is formed and deposited on the anode surface (21), which solid has a higher specific DC impedance than the specific DC impedance of the anode material, at least parts of the anode surface are shielded from such deposition by establishing thereat a shielding plasma (25).
摘要翻译：借助于在阳极（9）和阴极（7 =）之间的真空等离子体放电来处理工件或衬底表面，并且由此由于这种处理，固体（19）形成并沉积在阳极表面（21）上，固体具有比阳极材料的特定直流阻抗更高的特定DC阻抗，通过在屏蔽等离子体（25）处建立阳极表面的至少一部分而不受这种沉积的影响。

4. 发明专利

IL259263A Sputtering arrangement and sputtering method for optimized distribution of the energy flow 未知
公开(公告)号：IL259263A
公开(公告)日：2022-04-01
申请号：IL25926318
申请日：2018-05-10
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
发明人： KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
IPC分类号： H01J37/34 , C23C14/34
摘要： The present disclosure relates to a sputtering arrangement, a vacuum coating system, and a method for carrying out HiPIMS coating methods; the sputtering arrangement has at least two different interconnection possibilities and the switch to the second interconnection possibility, in which two sputtering sub-assemblies are operated simultaneously with high power pulses, achieves a productivity gain.

5. 发明专利

IL282907D0 Cubic al-rich altin coatings deposited from ceramic targets 未知
公开(公告)号：IL282907D0
公开(公告)日：2021-06-30
申请号：IL28290721
申请日：2021-05-04
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , MITSUBISHI HITACHI TOOL ENG LTD , YALAMANCHILI SIVA PHANI KUMAR , KURAPOV DENIS , SASAKI TOMOYA , KUBOTA KAZUYUKI
发明人： YALAMANCHILI SIVA PHANI KUMAR , KURAPOV DENIS , SASAKI TOMOYA , KUBOTA KAZUYUKI
IPC分类号： C23C14/06 , C23C14/32 , C23C14/34
摘要： The present invention discloses a non-reactive PVD coating process for producing an aluminium-rich AlxTi1−xN-based thin film having an aluminium content of >75 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure, and a columnar microstructure, wherein ceramic targets are used as a material source for the aluminium-rich AlxTi1−xN-based thin film.

6. 发明专利

IL259263B Sputtering arrangement and sputtering method for optimized distribution of the energy flow 未知
公开(公告)号：IL259263B
公开(公告)日：2022-04-01
申请号：IL25926318
申请日：2018-05-10
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
发明人： KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
摘要： The present disclosure relates to a sputtering arrangement, a vacuum coating system, and a method for carrying out HiPIMS coating methods; the sputtering arrangement has at least two different interconnection possibilities and the switch to the second interconnection possibility, in which two sputtering sub-assemblies are operated simultaneously with high power pulses, achieves a productivity gain.

7. 发明专利

IL262524A Ticn having reduced growth defects by means of hipims 未知
公开(公告)号：IL262524A
公开(公告)日：2021-12-01
申请号：IL26252418
申请日：2018-10-22
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , KRASSNITZER SIEGFRIED , KURAPOV DENIS
发明人： KRASSNITZER SIEGFRIED , KURAPOV DENIS
IPC分类号： C23C14/00 , C23C14/02 , C23C14/06 , C23C14/34 , C23C14/35 , H01J37/34
摘要： The invention relates to a method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of HIPIMS, wherein, in order to deposit the at least one TiCN layer, at least one Ti target is used as a Ti source for the production of the TiCN layer, which Ti target is sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one noble gas, preferably argon, and at least one nitrogen gas as a reactive gas, wherein, in order to reduce growth defects during the deposition of the at least one TiCN layer, the reactive atmosphere additionally comprises a carbon-containing gas, preferably CH4, as a second reactive gas, which carbon-containing gas is used as a carbon source for the production of the TiCN layer, wherein a bipolar bias voltage is applied to the substrate to be coated during the deposition of the TiCN layer, or at least one graphite target is used as a carbon source for the production of the TiCN layer, which graphite target is sputtered by means of a HIPIMS process in the coating chamber with the reactive atmosphere having only nitrogen gas as a reactive gas, wherein the Ti targets are operated with pulsed power preferably by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.

8. 发明专利

IL259263D0 Sputtering arrangement and sputtering method for optimized distribution of the energy flow 未知
公开(公告)号：IL259263D0
公开(公告)日：2018-07-31
申请号：IL25926318
申请日：2018-05-10
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
发明人： KRASSNITZER SIEGFRIED , LENDI DANIEL , KURAPOV DENIS
IPC分类号： H01J20060101
摘要： The present disclosure relates to a sputtering arrangement, a vacuum coating system, and a method for carrying out HiPIMS coating methods; the sputtering arrangement has at least two different interconnection possibilities and the switch to the second interconnection possibility, in which two sputtering sub-assemblies are operated simultaneously with high power pulses, achieves a productivity gain.

9. 发明专利

IL262524D0 Ticn having reduced growth defects by means of hipims 未知
公开(公告)号：IL262524D0
公开(公告)日：2018-12-31
申请号：IL26252418
申请日：2018-10-22
申请人： OERLIKON SURFACE SOLUTIONS AG PFAFFIKON , KRASSNITZER SIEGFRIED , KURAPOV DENIS
发明人： KRASSNITZER SIEGFRIED , KURAPOV DENIS
IPC分类号： C23C20060101
摘要： The invention relates to a method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of HIPIMS, wherein, in order to deposit the at least one TiCN layer, at least one Ti target is used as a Ti source for the production of the TiCN layer, which Ti target is sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one noble gas, preferably argon, and at least one nitrogen gas as a reactive gas, wherein, in order to reduce growth defects during the deposition of the at least one TiCN layer, the reactive atmosphere additionally comprises a carbon-containing gas, preferably CH4, as a second reactive gas, which carbon-containing gas is used as a carbon source for the production of the TiCN layer, wherein a bipolar bias voltage is applied to the substrate to be coated during the deposition of the TiCN layer, or at least one graphite target is used as a carbon source for the production of the TiCN layer, which graphite target is sputtered by means of a HIPIMS process in the coating chamber with the reactive atmosphere having only nitrogen gas as a reactive gas, wherein the Ti targets are operated with pulsed power preferably by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.

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