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1. 发明申请

WO2010117807A3 TWO PASS ERASE FOR NON-VOLATILE STORAGE 审中-公开
标题翻译：用于非易失存储的两次擦除
公开(公告)号：WO2010117807A3
公开(公告)日：2010-12-16
申请号：PCT/US2010029246
申请日：2010-03-30
申请人： SANDISK CORP , LEE DANA , MOKHLESI NIMA , KHANDEL WAL ANUBHAV
发明人： LEE DANA , MOKHLESI NIMA , KHANDEL WAL ANUBHAV
IPC分类号： G11C16/16
CPC分类号： G11C16/16 , G11C11/5635
摘要： Techniques are disclosed herein for erasing non-volatile memory cells. The memory cells are erased using a trial erase pulse. A suitable magnitude for a second pulse is determined based on the magnitude of the trial erase pulse and data collected about the threshold voltage distribution after the trial erase. The second erase pulse is used to erase the memory cells. In one implementation, the threshold voltages of the memory cells are not verified after the second erase. Soft programming after the second erase may be performed. The magnitude of the soft programming pulse may be determined based on the trial erase pulse. In one implementation, the memory cells' threshold voltages are not verified after the soft programming. Limiting the number of erase pulses and soft programming pulses saves time and power. Determining an appropriate magnitude for the second erase pulse minimizes or eliminates over-erasing.
摘要翻译：本文公开了用于擦除非易失性存储器单元的技术。使用试验擦除脉冲擦除存储单元。基于试用擦除脉冲的幅度和在试验擦除之后关于阈值电压分布收集的数据来确定适合于第二脉冲的幅度。第二个擦除脉冲用于擦除存储单元。在一个实现中，在第二擦除之后，不会验证存储器单元的阈值电压。可以执行第二次擦除之后的软编程。可以基于试用擦除脉冲来确定软编程脉冲的幅度。在一个实现中，在软编程之后，不会验证存储单元的阈值电压。限制擦除脉冲数和软编程脉冲可节省时间和功率。确定第二擦除脉冲的适当幅度可最大限度地减少或消除过度擦除。

2. 发明申请

WO2010117807A2 TWO PASS ERASE FOR NON-VOLATILE STORAGE 审中-公开
标题翻译：两次擦拭非易失性存储
公开(公告)号：WO2010117807A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/029246
申请日：2010-03-30
申请人： SANDISK CORPORATION , LEE, Dana , MOKHLESI, Nima , KHANDEL WAL, Anubhav
发明人： LEE, Dana , MOKHLESI, Nima , KHANDEL WAL, Anubhav
IPC分类号： G11C16/16
CPC分类号： G11C16/16 , G11C11/5635
摘要： Techniques are disclosed herein for erasing non-volatile memory cells. The memory cells are erased using a trial erase pulse. A suitable magnitude for a second pulse is determined based on the magnitude of the trial erase pulse and data collected about the threshold voltage distribution after the trial erase. The second erase pulse is used to erase the memory cells. In one implementation, the threshold voltages of the memory cells are not verified after the second erase. Soft programming after the second erase may be performed. The magnitude of the soft programming pulse may be determined based on the trial erase pulse. In one implementation, the memory cells' threshold voltages are not verified after the soft programming. Limiting the number of erase pulses and soft programming pulses saves time and power. Determining an appropriate magnitude for the second erase pulse minimizes or eliminates over-erasing.
摘要翻译：这里公开了用于擦除非易失性存储单元的技术。存储单元使用试擦除脉冲进行擦除。基于试擦除脉冲的大小和在试擦除后关于阈值电压分布收集的数据来确定第二脉冲的合适幅度。第二擦除脉冲用于擦除存储单元。在一个实现中，在第二擦除之后，存储器单元的阈值电压未被验证。可以执行第二次擦除之后的软编程。软编程脉冲的大小可以基于试擦除脉冲来确定。在一个实现中，在软编程之后，存储器单元的阈值电压不被验证。限制擦除脉冲和软编程脉冲的数量可节省时间和功耗。确定第二擦除脉冲的适当幅度可以最大限度地减少或消除过度擦除。

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