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    • 3. 发明授权
    • Silicon nitride articles with controlled multi-density regions
    • 具有受控多密度区域的氮化硅制品
    • US5103239A
    • 1992-04-07
    • US898071
    • 1986-08-20
    • Juris VerzemnieksFredrick H. Simpson
    • Juris VerzemnieksFredrick H. Simpson
    • H01Q1/42
    • H01Q1/42
    • A monolithic silicon nitride radome structure having a forward portion, an after portion and a transition portion therebetween, is provided. The forward portion has a density of about 0.75 to 1.0 g/cc, the after portion has a density of about 1.6 to 2.0 g/cc and the transition portion has regions of increasing density, from forward to aft, each region having a greater density than the preceding portion or region. Also provided is a method for manufacturing the above-described radome structure which comprises filling and compacting a series of formulations consisting essentially of particulate silicon, silicon nitride and a fugitive pore-forming material into a radome mold, removing the shaped compact from the mold, subliming the pore-forming material from the compact to form a porous compact structure, and reacting the porous structure with nitrogen to convert the porous structure to an identically shaped radome structure of .alpha.-silicon nitride whiskers.
    • 提供了具有前部,后部和过渡部之间的单片氮化硅天线罩结构。 前部具有约0.75至1.0g / cc的密度,后部具有约1.6至2.0g / cc的密度,并且过渡部具有从正向到前部的密度增加的区域,每个区域具有更大的密度 比之前的部分或区域。 还提供了一种用于制造上述天线罩结构的方法,其包括将基本上由颗粒状硅,氮化硅和逸散成孔材料组成的一系列制剂填充并压实到天线罩模具中,从模具中去除成形的压块, 从成形体中升温成孔材料以形成多孔致密结构,并使多孔结构与氮反应,以将多孔结构转变为相同形状的α硅氮化物晶须的天线罩结构。