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    • 6. 发明授权
    • Method of fabricating array substrate
    • 阵列基板的制作方法
    • US08158469B2
    • 2012-04-17
    • US12843738
    • 2010-07-26
    • Hong-Koo LeeSung-Ki KimJun-Hyeon BaeKi-Tae Kim
    • Hong-Koo LeeSung-Ki KimJun-Hyeon BaeKi-Tae Kim
    • H01L21/84
    • H01L21/268H01L27/1248H01L27/1285
    • A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.
    • 制造阵列基板的方法包括形成栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层,本征非晶硅层,无机材料绝缘层和传热层; 将激光束照射到传热层上以将本征非晶硅层结晶成多晶硅层; 去除传热层; 使用缓冲的氧化物蚀刻剂来形成无机绝缘材料层,以形成对应于栅电极的蚀刻停止层,在蚀刻停止层和多晶硅层上形成杂质掺杂非晶硅层和金属层; 图案化金属层以形成数据线,源电极和漏电极,并在钝化层上形成像素电极。
    • 7. 发明申请
    • METHOD OF FABRICATING ARRAY SUBSTRATE
    • 方法制作阵列基板
    • US20110124162A1
    • 2011-05-26
    • US12843738
    • 2010-07-26
    • Hong-Koo LEESung-Ki KIMJun-Hyeon BAEKi-Tae KIM
    • Hong-Koo LEESung-Ki KIMJun-Hyeon BAEKi-Tae KIM
    • H01L21/336
    • H01L21/268H01L27/1248H01L27/1285
    • A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.
    • 制造阵列基板的方法包括形成栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层,本征非晶硅层,无机材料绝缘层和传热层; 将激光束照射到传热层上以将本征非晶硅层结晶成多晶硅层; 去除传热层; 使用缓冲的氧化物蚀刻剂来形成无机绝缘材料层,以形成对应于栅电极的蚀刻停止层,在蚀刻停止层和多晶硅层上形成杂质掺杂的非晶硅层和金属层; 图案化金属层以形成数据线,源电极和漏电极,并在钝化层上形成像素电极。