专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08927995B2 Thin film transistor with anti-diffusion area that prevents metal atoms and/or ions from source/drain electrodes from shortening the channel length and display substrate having the thin film transistor 有权
标题翻译：具有防扩散区域的薄膜晶体管，其防止源极/漏极的金属原子和/或离子缩短沟道长度，并且具有薄膜晶体管的显示衬底
公开(公告)号：US08927995B2
公开(公告)日：2015-01-06
申请号：US11581619
申请日：2006-10-16
申请人： Hong Koo Lee , Sang Hoon Jung
发明人： Hong Koo Lee , Sang Hoon Jung
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/76 , H01L29/417 , H01L29/08 , H01L29/786 , H01L29/06
CPC分类号： H01L29/78606 , H01L29/0603 , H01L29/0657 , H01L29/0847 , H01L29/78618
摘要： A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
摘要翻译：薄膜晶体管包括设置在基板上的半导体图案和具有导电或非导电特性的半导体图案部分，以及在半导体图案部分侧的防扩散部分，以防止金属离子沿着半导体图案部分扩散。第一绝缘层覆盖半导体图案，并且具有暴露半导体图案部分的第一区域的第一接触孔和暴露半导体图案部分的第二区域的第二接触孔。栅电极设置在第一绝缘层上。第二绝缘层覆盖栅电极，并具有暴露第一区域的第三接触孔和暴露第二区域的第四接触孔。源极电极形成在第二绝缘层上并与第一区域连接，漏电极形成在第二绝缘层上并连接到第二区域。

2. 发明申请

US20110124162A1 METHOD OF FABRICATING ARRAY SUBSTRATE 有权
标题翻译：方法制作阵列基板
公开(公告)号：US20110124162A1
公开(公告)日：2011-05-26
申请号：US12843738
申请日：2010-07-26
申请人： Hong-Koo LEE , Sung-Ki KIM , Jun-Hyeon BAE , Ki-Tae KIM
发明人： Hong-Koo LEE , Sung-Ki KIM , Jun-Hyeon BAE , Ki-Tae KIM
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L27/1248 , H01L27/1285
摘要： A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.
摘要翻译：制造阵列基板的方法包括形成栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层，本征非晶硅层，无机材料绝缘层和传热层; 将激光束照射到传热层上以将本征非晶硅层结晶成多晶硅层; 去除传热层; 使用缓冲的氧化物蚀刻剂来形成无机绝缘材料层，以形成对应于栅电极的蚀刻停止层，在蚀刻停止层和多晶硅层上形成杂质掺杂的非晶硅层和金属层; 图案化金属层以形成数据线，源电极和漏电极，并在钝化层上形成像素电极。

3. 发明授权

US07785992B2 Array substrate for flat display device and method for fabricating the same 有权
标题翻译：平板显示装置用阵列基板及其制造方法
公开(公告)号：US07785992B2
公开(公告)日：2010-08-31
申请号：US12314510
申请日：2008-12-11
申请人： Sung Ki Kim , Hong Koo Lee
发明人： Sung Ki Kim , Hong Koo Lee
IPC分类号： H01L21/20
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/78696
摘要： The present invention relates to an array substrate for a flat display device and a method for fabricating the same, in which a number of masks is reduced for reducing a cost and improving a device performance. The array substrate includes a gate electrode formed on an insulating substrate, a gate insulating film formed on an entire surface of the insulating substrate including the gate electrode, an active layer formed on the gate insulating film opposite to the gate electrode having a stack of a polysilicon layer and an amorphous silicon layer each having a width greater than the gate electrode, a source electrode and a drain electrode separated from each other at a portion of the active layer and formed over the active layer with an ohmic contact layer disposed therebetween, an interlayer insulating film formed on an entire surface of the insulating substrate having a contact hole to expose a predetermined portion of the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：本发明涉及一种用于平板显示装置的阵列基板及其制造方法，其中减少了许多掩模以降低成本并提高器件性能。阵列基板包括形成在绝缘基板上的栅极电极，形成在包括栅电极的绝缘基板的整个表面上的栅极绝缘膜，形成在与栅电极相对的栅极绝缘膜上的有源层，多晶硅层和非晶硅层，其各自具有大于栅电极的宽度，源电极和漏电极在有源层的一部分彼此分离并且在有源层上形成有在其间设置的欧姆接触层，层间绝缘膜，形成在具有接触孔的绝缘基板的整个表面上，以暴露出漏电极的预定部分，以及通过接触孔连接到漏电极的像素电极。

4. 发明申请

US20070290206A1 Thin film transistor and organic electro-luminescence display device using the same 有权
标题翻译：薄膜晶体管和使用其的有机电致发光显示装置
公开(公告)号：US20070290206A1
公开(公告)日：2007-12-20
申请号：US11643968
申请日：2006-12-22
申请人： Tae Joon Ahn , Hong Koo Lee
发明人： Tae Joon Ahn , Hong Koo Lee
IPC分类号： H01L29/04
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0558
摘要： A thin film transistor includes a semiconductor pattern on a substrate, a gate insulating film to cover the semiconductor pattern, a gate electrode partially overlapping the semiconductor pattern with the gate insulating film therebetween, a hole in the gate electrode to expose the gate insulating film, an interlayer insulating film to cover the gate electrode, and a source electrode and a drain electrode contacting the semiconductor pattern through the interlayer insulating layer and the gate insulating layer, wherein the semiconductor pattern includes at least two channels between the source electrode and the drain electrode, the at least two channels having a region with a varying width.
摘要翻译：薄膜晶体管包括在基板上的半导体图形，覆盖半导体图案的栅极绝缘膜，与半导体图案部分重叠的栅电极与栅极绝缘膜之间的栅极绝缘膜，在栅电极中露出栅极绝缘膜的孔，覆盖栅电极的层间绝缘膜，以及通过层间绝缘层和栅极绝缘层与半导体图案接触的源电极和漏电极，其中，所述半导体图案在源电极和漏电极之间包括至少两个沟道所述至少两个通道具有具有变化宽度的区域。

5. 发明授权

US08462087B2 Organic light emitting diode display 有权
标题翻译：有机发光二极管显示
公开(公告)号：US08462087B2
公开(公告)日：2013-06-11
申请号：US11880734
申请日：2007-07-24
申请人： Hong Koo Lee , Sang Hoon Jung
发明人： Hong Koo Lee , Sang Hoon Jung
IPC分类号： G06F3/033
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0842 , G09G2310/0254 , G09G2310/0297 , G09G2320/043
摘要： An organic light emitting diode display device and the driving method thereof that is adaptive for increasing display quality. The organic light emitting diode display device according to an embodiment includes a display panel where pixels having an organic light emitting diode device are arranged in a matrix type and a data driver that supplies a data voltage and an inverted voltage to the pixels, where the inverted voltage is symmetric to the data voltage relative to a reference voltage.
摘要翻译：一种适用于增加显示质量的有机发光二极管显示装置及其驱动方法。根据实施例的有机发光二极管显示装置包括显示面板，其中具有有机发光二极管器件的像素以矩阵形式布置，以及将数据电压和反相电压提供给像素的数据驱动器，其中反相电压相对于参考电压对数据电压。

6. 发明申请

US20120146042A1 MICRO-CRYSTALLINE THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：微晶薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20120146042A1
公开(公告)日：2012-06-14
申请号：US13269348
申请日：2011-10-07
申请人： Ki-Tae KIM , Sung-Ki Kim , Hong-Koo Lee , Jun-Hyeon Bae
发明人： Ki-Tae KIM , Sung-Ki Kim , Hong-Koo Lee , Jun-Hyeon Bae
IPC分类号： H01L33/08
CPC分类号： H01L27/1288 , H01L21/268 , H01L27/124 , H01L29/04 , H01L29/41733
摘要： A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.
摘要翻译：显示装置包括：基板; 栅极和数据线在衬底上彼此交叉以限定像素区域; 连接到栅极和数据线的薄膜晶体管，并且包括栅电极，由微晶硅制成的有源层，以及依次形成的源极和漏极; 薄膜晶体管上的钝化层; 以及钝化层上的像素区域中的第一电极，并连接到漏电极，其中漏电极和栅电极之间的第一重叠宽度小于源电极和栅电极之间的第二重叠宽度。

7. 发明申请

US20080100609A1 Organic light emitting diode display and driving method thereof 有权
标题翻译：有机发光二极管显示及其驱动方法
公开(公告)号：US20080100609A1
公开(公告)日：2008-05-01
申请号：US11880734
申请日：2007-07-24
申请人： Hong Koo Lee , Sang Hoon Jung
发明人： Hong Koo Lee , Sang Hoon Jung
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0842 , G09G2310/0254 , G09G2310/0297 , G09G2320/043
摘要： An organic light emitting diode display device and the driving method thereof that is adaptive for increasing display quality. The organic light emitting diode display device according to an embodiment includes a display panel where pixels having an organic light emitting diode device are arranged in a matrix type and a data driver that supplies a data voltage and an inverted voltage to the pixels, where the inverted voltage is symmetric to the data voltage relative to a reference voltage.
摘要翻译：一种适用于增加显示质量的有机发光二极管显示装置及其驱动方法。根据实施例的有机发光二极管显示装置包括显示面板，其中具有有机发光二极管器件的像素以矩阵形式布置，以及将数据电压和反相电压提供给像素的数据驱动器，其中反相电压相对于参考电压对数据电压。

8. 发明申请

US20070268220A1 Pixel circuit of organic light emitting display 有权
标题翻译：有机发光显示器的像素电路
公开(公告)号：US20070268220A1
公开(公告)日：2007-11-22
申请号：US11798856
申请日：2007-05-17
申请人： Hong Koo Lee , Sang Hoon Jung
发明人： Hong Koo Lee , Sang Hoon Jung
IPC分类号： G09G3/30
CPC分类号： G09G3/3241 , G09G2300/0852 , G09G2300/0861 , G09G2310/0262
摘要： The pixel circuit of an organic light emitting display includes a first transistor to a seventh transistor, a first capacitor, a second transistor and an organic light emitting diode. The first capacitor stores the data signal from the first, second and third transistors, and the second capacitor stores the threshold voltage of the fourth transistor from the fifth transistor. Voltages stored in the first and second capacitors are combined by the sixth transistor, and the fourth transistor generates a driving current corresponding to a combined voltage of the voltages stored in the first and second capacitor. The seventh transistor transmits the driving current and the organic light emitting diode emits light corresponding to the driving current.
摘要翻译：有机发光显示器的像素电路包括第一晶体管至第七晶体管，第一电容器，第二晶体管和有机发光二极管。第一电容器存储来自第一，第二和第三晶体管的数据信号，第二电容器存储来自第五晶体管的第四晶体管的阈值电压。存储在第一和第二电容器中的电压由第六晶体管组合，并且第四晶体管产生与存储在第一和第二电容器中的电压的组合电压相对应的驱动电流。第七晶体管传输驱动电流，有机发光二极管发射与驱动电流相对应的光。

9. 发明申请

US20070262313A1 Thin film transistor, method of manufacturing the thin film transistor, and display substrate having the thin film transistor 有权
标题翻译：薄膜晶体管，薄膜晶体管的制造方法以及具有薄膜晶体管的显示基板
公开(公告)号：US20070262313A1
公开(公告)日：2007-11-15
申请号：US11581619
申请日：2006-10-16
申请人： Hong Koo Lee , Sang Hoon Jung
发明人： Hong Koo Lee , Sang Hoon Jung
IPC分类号： H01L29/04
CPC分类号： H01L29/78606 , H01L29/0603 , H01L29/0657 , H01L29/0847 , H01L29/78618
摘要： A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
摘要翻译：薄膜晶体管包括设置在基板上的半导体图案和具有导电或非导电特性的半导体图案部分，以及在半导体图案部分侧的防扩散部分，以防止金属离子沿着半导体图案部分扩散。第一绝缘层覆盖半导体图案，并且具有暴露半导体图案部分的第一区域的第一接触孔和暴露半导体图案部分的第二区域的第二接触孔。栅电极设置在第一绝缘层上。第二绝缘层覆盖栅电极，并具有暴露第一区域的第三接触孔和暴露第二区域的第四接触孔。源极电极形成在第二绝缘层上并与第一区域连接，漏电极形成在第二绝缘层上并连接到第二区域。

10. 发明授权

US07956534B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07956534B2
公开(公告)日：2011-06-07
申请号：US11451031
申请日：2006-06-12
申请人： Tae Joon Ahn , Hong Koo Lee
发明人： Tae Joon Ahn , Hong Koo Lee
IPC分类号： H01L51/52
CPC分类号： H01L27/3253 , H01L27/12
摘要： A light emitting device comprises a first pixel portion that includes a light emitting portion arranged between two electrodes on a first substrate, a transistor portion formed on a second substrate arranged to be opposed to the first substrate, a connection electrode extended from one of the two electrodes, and an electrical contact portion in surface contact with both the connection electrode and a drain of the transistor portion.
摘要翻译：发光器件包括第一像素部分，其包括布置在第一衬底上的两个电极之间的发光部分，形成在布置成与第一衬底相对的第二衬底上的晶体管部分，从两个电极之一延伸的连接电极电极，以及与晶体管部分的连接电极和漏极表面接触的电接触部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式