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1. 发明授权

US08029754B2 Cerium oxide powder and process for producing the same 有权
标题翻译：氧化铈粉及其制造方法
公开(公告)号：US08029754B2
公开(公告)日：2011-10-04
申请号：US10557356
申请日：2005-07-28
申请人： Jun-seok Nho , Jang-yul Kim , Myoung-hwan Oh , Jong-pil Kim , Seung-beom Cho
发明人： Jun-seok Nho , Jang-yul Kim , Myoung-hwan Oh , Jong-pil Kim , Seung-beom Cho
IPC分类号： C01F17/00
CPC分类号： C01F17/0043 , C01P2004/03 , C01P2004/32 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to cerium oxide powder and a process for producing the same. The cerium oxide powder of the invention, which is produced by mixing a cerium source such as cerium oxide, cerium hydroxide and cerium carbonate with an alkali metal compound, as flux, and performing high temperature treatment, may have a variety particle size while having spherical shape.
摘要翻译：本发明涉及二氧化铈粉末及其制造方法。通过将铈氧化铈，碳酸铈等铈源与碱金属化合物混合，作为助熔剂进行高温处理而制造的本发明的氧化铈粉末，可以具有各种粒径，同时具有球状形状。

2. 发明授权

US07867461B2 Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same 有权
标题翻译：化学机械抛光用氧化铈粉末的制备方法及使用其的化学机械研磨浆料的制备方法
公开(公告)号：US07867461B2
公开(公告)日：2011-01-11
申请号：US11580226
申请日：2006-10-13
申请人： Myoung-hwan Oh , Jun-seok Nho , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho , Min-Jin Ko
发明人： Myoung-hwan Oh , Jun-seok Nho , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho , Min-Jin Ko
IPC分类号： C01F17/00
CPC分类号： C01F17/0043 , B82Y30/00 , C01P2002/60 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/17 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.
摘要翻译：本发明涉及一种制备用于CMP浆料的氧化铈粉末的方法和使用其制备CMP浆料的方法，更具体地说，涉及一种制备用于CMP浆料的氧化铈粉末的方法和使用其制备CMP浆料，其中通过制备铈前体来增加粉末的比表面积，然后分解和煅烧所制备的铈前体。控制孔分布以增加抛光膜和抛光材料之间的化学接触面积，从而减少抛光时间，同时粉末的物理强度降低，这显着地减少了抛光膜上的划痕。

3. 发明申请

US20100148113A1 METHOD FOR PREPARING CERIUM CARBONATE POWDER 有权
标题翻译：制备碳酸钙粉末的方法
公开(公告)号：US20100148113A1
公开(公告)日：2010-06-17
申请号：US12531452
申请日：2008-03-14
申请人： Myoung-Hwan Oh , Seung-Beom Cho , Jun-Seok Nho , Jong-Pil Kim , Jang-Yul Kim
发明人： Myoung-Hwan Oh , Seung-Beom Cho , Jun-Seok Nho , Jong-Pil Kim , Jang-Yul Kim
IPC分类号： C01F17/00 , C09K13/00
CPC分类号： C01F17/005 , C01P2002/72
摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.
摘要翻译：在通过将铈前体溶液与尿素溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中所述碳酸铈粉末具有六方晶系结构，通过使用至少一种有机溶剂作为溶剂用于任一种或铈前体溶液和尿素溶液两者，并将沉淀反应的温度调节在120℃至300℃的范围内。此外，该方法可以从碳酸铈粉末中得到碳酸铈粉末，氧化铈粉末，和包括氧化铈粉末作为研磨剂的CMP浆料。在该方法中，作为沉淀剂的尿素可以提高反应的均匀性，因此可以容易且廉价地获得六方晶系结构的碳酸铈粉末，而不会受到高温高压的危险，并且需要昂贵的水热合成系统。

4. 发明申请

US20100009539A1 CERIUM OXIDE POWDER, METHOD FOR PREPARING THE SAME, AND CMP SLURRY COMPRISING THE SAME 有权
标题翻译：氧化铝粉末，其制备方法和包括其的CMP浆料
公开(公告)号：US20100009539A1
公开(公告)日：2010-01-14
申请号：US12309694
申请日：2007-07-26
申请人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
发明人： Myoung Hwan Oh , Seung Beom Cho , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim
IPC分类号： H01L21/465 , C09K13/00 , C01F17/00
CPC分类号： H01L21/31053 , B24B37/044 , B82Y30/00 , C01F17/0043 , C01P2002/72 , C01P2002/76 , C01P2004/03 , C01P2004/22 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C09G1/02 , C09K3/1463 , H01L21/76229
摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.
摘要翻译：公开了用于CMP研磨剂的氧化铈粉末，其可以在半导体制造工艺中的化学机械抛光期间改善氧化硅层对氮化硅层的抛光选择性和/或晶片内不均匀性（WIWNU）。更具体地说，通过使用具有六方晶系结构的碳酸铈作为前体来获得二氧化铈粉末。此外，公开了包含作为研磨剂的氧化铈粉末的CMP浆料和使用CMP浆料作为研磨浆料的半导体器件的浅沟槽隔离方法。

5. 发明申请

US20080132403A1 Cerium Oxide Power and Process for Producing the Same 有权
标题翻译：氧化铈电源及其生产工艺
公开(公告)号：US20080132403A1
公开(公告)日：2008-06-05
申请号：US10557356
申请日：2005-07-28
申请人： Jun-seok Nho , Jang-yul Kim , Myoung-hwan Oh , Jong-pil Kim , Seung-beom Cho
发明人： Jun-seok Nho , Jang-yul Kim , Myoung-hwan Oh , Jong-pil Kim , Seung-beom Cho
IPC分类号： C01F17/00 , C04B35/50
CPC分类号： C01F17/0043 , C01P2004/03 , C01P2004/32 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to cerium oxide powder and a process for producing the same. The cerium oxide powder of the invention, which is produced by mixing a cerium source such as cerium oxide, cerium hydroxide and cerium carbonate with an alkali metal compound, as flux, and performing high temperature treatment, may have a variety particle size while having spherical shape.
摘要翻译：本发明涉及二氧化铈粉末及其制造方法。通过将铈氧化铈，碳酸铈等铈源与碱金属化合物混合，作为助熔剂进行高温处理而制造的本发明的氧化铈粉末，可以具有各种粒径，同时具有球状形状。

6. 发明授权

US07153485B2 Method for preparing single crystalline zinc sulfide powder for phosphor 有权
标题翻译：制备荧光粉单晶硫化锌粉末的方法
公开(公告)号：US07153485B2
公开(公告)日：2006-12-26
申请号：US10380144
申请日：2002-05-07
申请人： Jun-Seok Nho , Seung-Beom Cho , Chang-Seok Ryoo , Kwang-Hee Lee , Tae-Hyun Kwon
发明人： Jun-Seok Nho , Seung-Beom Cho , Chang-Seok Ryoo , Kwang-Hee Lee , Tae-Hyun Kwon
IPC分类号： C01G9/08 , C09K11/56
CPC分类号： C01G9/08 , C09K11/565
摘要： This invention relates to a method for preparing a Zinc Sulfide powder, and provides a method for preparing a single crystalline powder of Zinc Sulfide (ZnS) a high crystallinity comprising a step of conducting a hydrothermal reaction of a) Zinc Oxide or Zinc acetate as Zinc source and b) thioacetamide or thiourea as Sulfur source at a temperature of 180 to 230° C. and a fluorescent substance using the same as a source.
摘要翻译：本发明涉及一种制备硫化锌粉末的方法，并提供了一种制备高结晶度的硫化锌（ZnS）单晶粉末的方法，包括进行水热反应的步骤a）氧化锌或醋酸锌作为锌来源和b）硫代乙酰胺或硫脲作为硫源，温度为180-230℃，使用其作为源的荧光物质。

7. 发明授权

US08388710B2 Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same 有权
标题翻译：氧化铈粉末及其制备方法以及含有它们的CMP浆料
公开(公告)号：US08388710B2
公开(公告)日：2013-03-05
申请号：US12076649
申请日：2008-03-20
申请人： Jun-seok Nho , Myoung-hwan Oh , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho
发明人： Jun-seok Nho , Myoung-hwan Oh , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09K13/00
CPC分类号： C01F17/0043 , B82Y30/00 , C01P2004/03 , C01P2004/04 , C01P2004/20 , C01P2004/24 , C01P2004/40 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09G1/02 , C09K3/1409 , C09K3/1463 , Y10T428/2982
摘要： Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.
摘要翻译：公开了用于CMP研磨剂的氧化铈粉末，其可以在半导体制造工艺中的化学机械抛光期间改善氧化硅层对氮化硅层的抛光选择性和/或晶片内不均匀性（WIWNU）。更具体地说，通过使用具有六方晶系结构的碳酸铈作为前体来获得二氧化铈粉末。此外，公开了包含作为研磨剂的氧化铈粉末的CMP浆料和使用CMP浆料作为研磨浆料的半导体器件的浅沟槽隔离方法。

8. 发明授权

US08361419B2 Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same 有权
标题翻译：碳酸铈粉末，其制备方法，由其制成的氧化铈粉末，其制备方法以及包含其的CMP浆料
公开(公告)号：US08361419B2
公开(公告)日：2013-01-29
申请号：US12591227
申请日：2009-11-12
申请人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
发明人： Myoung Hwan Oh , Jun Seok Nho , Jong Pil Kim , Jang Yul Kim , Seung Beom Cho
IPC分类号： C01F17/00
CPC分类号： C01F17/0043 , C01F17/005 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/80
摘要： Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.
摘要翻译：公开了一种通过将铈前体溶液与碳酸酯前体溶液混合以制备沉淀来制备碳酸铈粉末的方法，其中用于铈前体溶液和碳酸酯前体溶液中的至少一种溶剂是有机溶剂。还公开了从该方法得到的碳酸铈粉末，由碳酸铈粉末得到的氧化铈粉末，氧化铈粉末的制备方法和含有氧化铈粉末的CMP浆料。使用有机溶剂制备碳酸铈的方法允许所得的碳酸铈粉末具有从初始成核步骤可控的尺寸和形状。此外，可以容易地控制由碳酸铈粉末获得的氧化铈粉末的尺寸和形状。

9. 发明授权

US08329123B2 Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same 有权
标题翻译：化学机械抛光用氧化铈粉末的制备方法及使用其的化学机械研磨浆料的制备方法
公开(公告)号：US08329123B2
公开(公告)日：2012-12-11
申请号：US12957136
申请日：2010-11-30
申请人： Myoung-hwan Oh , Jun-seok Nho , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho , Min-Jin Ko
发明人： Myoung-hwan Oh , Jun-seok Nho , Jang-yul Kim , Jong-pil Kim , Seung-beom Cho , Min-Jin Ko
IPC分类号： C01F17/00 , B24B1/00 , H01L21/302 , H01L21/461 , C09G1/02 , C09G1/04
CPC分类号： C01F17/0043 , B82Y30/00 , C01P2002/60 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/17 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.
摘要翻译：本发明涉及一种制备用于CMP浆料的氧化铈粉末的方法和使用其制备CMP浆料的方法，更具体地说，涉及一种制备用于CMP浆料的氧化铈粉末的方法和使用其制备CMP浆料，其中通过制备铈前体来增加粉末的比表面积，然后分解和煅烧所制备的铈前体。控制孔分布以增加抛光膜和抛光材料之间的化学接触面积，从而减少抛光时间，同时粉末的物理强度降低，这显着地减少了抛光膜上的划痕。

10. 发明授权

US07736530B2 CMP slurry and method for polishing semiconductor wafer using the same 有权
标题翻译： CMP浆料和使用其的抛光半导体晶片的方法
公开(公告)号：US07736530B2
公开(公告)日：2010-06-15
申请号：US11657051
申请日：2007-01-24
申请人： Seung Beom Cho , Jong Pil Kim , Jun Seok Nho , Myoung Hwan Oh , Jang Yul Kim
发明人： Seung Beom Cho , Jong Pil Kim , Jun Seok Nho , Myoung Hwan Oh , Jang Yul Kim
IPC分类号： C09K13/04
CPC分类号： C09G1/02 , H01L21/3212
摘要： Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.
摘要翻译：公开了一种CMP浆料，其中将包含重均分子量为30-500并含有羟基（OH），羧基（COOH）或二者）的化合物加入到包含磨料颗粒和水的CMP浆料中并且具有第一粘度，使得CMP浆料被控制为具有比第一粘度低5-30％的第二粘度。还公开了使用CMP浆料来研磨半导体晶片的方法。根据所公开的发明，可以减少CMP浆料中的磨料颗粒的聚集粒度，同时可以减少CMP浆料的粘度，并且可以提高抛光时晶片的全局平面性。因此，CMP浆料可以有利地用于制造需要精细图案的半导体器件的工艺中，并且可以通过其在半导体工艺中的使用来提高半导体器件的可靠性和生产。

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