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    • 1. 发明申请
    • CABLE
    • 电缆
    • US20140182884A1
    • 2014-07-03
    • US14240557
    • 2012-08-24
    • Naoki YonezawaKenji SugiharaJun Kuwata
    • Naoki YonezawaKenji SugiharaJun Kuwata
    • H01B9/00
    • H01B9/00B60L53/16H01B7/1895Y02T10/7005Y02T10/7072Y02T90/14
    • A cable wherein it is possible to prevent a pair of conductors from coming into contact with one another by disposing an inner insulator between the pair of conductors, and to prevent damages to a power source circuit and such caused by the flow of overcurrent. A cable (100) is used when supplying power to a storage battery on a moving body. A first conductor (101) is connected to a positive electrode. A second conductor (102) is connected to a negative electrode. A third insulator (106) is disposed between the first conductor (101) and the second conductor (102), thereby preventing the first conductor (101) and the second conductor (102) from coming into contact with one another. A fourth insulator (107) covers the first conductor (101), the second conductor (102), and the third insulator (106).
    • 一种电缆,其中可以通过在一对导体之间设置内绝缘体来防止一对导体彼此接触,并且防止由于过电流引起的电源电路的损坏。 当向移动体上的蓄电池供电时,使用电缆(100)。 第一导体(101)连接到正电极。 第二导体(102)连接到负电极。 第三绝缘体(106)设置在第一导体(101)和第二导体(102)之间,从而防止第一导体(101)和第二导体(102)彼此接触。 第四绝缘体(107)覆盖第一导体(101),第二导体(102)和第三绝缘体(106)。
    • 2. 发明授权
    • Zero thermal expansion material
    • 零热膨胀材料
    • US06812178B2
    • 2004-11-02
    • US10189773
    • 2002-07-08
    • Tomoko SuzukiAtsushi OmoteJun Kuwata
    • Tomoko SuzukiAtsushi OmoteJun Kuwata
    • C04B35495
    • C04B35/053C01G39/00C01G39/006C01G41/006C01G49/00C01P2002/72C01P2006/10C01P2006/32C04B35/488C04B35/495H01L23/15H01L2924/0002H05K1/0306H01L2924/00
    • Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ2O8 (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX4 (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.
    • 使用至少部分由化学式RQ2O8表示的化合物(其中R是Zr,Hf或由它们的混合体系表示的四价金属元素)的双氧化物作为负热膨胀材料,Q是六价金属元素 选自W和Mo),并且使用至少部分由化学式MQX4表示的化合物(其中M为Mg,Ca,Sr,Ba,Ra或由下式表示的二价金属元素作为正热膨胀材料) 任何这些的混合体系,Q是选自W和Mo的六价金属元素,X是选自O和S的元素),优选以1:1的重量比混合,得到 热膨胀系数在宽温度范围内基本为零的材料,即零热膨胀材料。 使用这种零热膨胀材料,可以获得高精度和高性能的实用部件。
    • 7. 发明授权
    • Thin film electroluminescence display device
    • 薄膜电致发光显示装置
    • US4869973A
    • 1989-09-26
    • US93263
    • 1987-09-04
    • Masahiro NishikawaTakao TohdaJun KuwataYosuke FujitaTomizo MatsuokaAtsushi Abe
    • Masahiro NishikawaTakao TohdaJun KuwataYosuke FujitaTomizo MatsuokaAtsushi Abe
    • H05B33/12H05B33/22
    • H05B33/12H05B33/22Y10S428/917
    • In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.
    • 在透明电极,第一电介质层,EL发射层,第二电介质层和背面电极依次层叠在平坦化衬底上的薄膜EL显示器件中,制成10nm-200nm厚的薄膜 的硫化钙或含有硫化钙的混合物,其通过设置在第一介电层和EL发射层之间以及EL发射层和第二介电层之间的电子束气相沉积法形成,从而获得薄膜EL显示装置 即使在由驱动脉冲的时间关系对称的交流脉冲(例如,正脉冲的开始与后续的开始之间的时间段)驱动的情况下,也能够长时间保持稳定的动作 负脉冲与负脉冲的开始与后续的正脉冲的开始之间的时间段不同)或在posi中的幅度不同 积极面和负面。
    • 10. 发明授权
    • Thin-film electroluminescent element
    • 薄膜电致发光元件
    • US4613546A
    • 1986-09-23
    • US678406
    • 1984-12-05
    • Jun KuwataTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • Jun KuwataTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • H01B3/12H05B33/12H05B33/22
    • H05B33/22H01B3/12Y10S428/917Y10T428/265
    • The development of a dielectric thin-film which is high (140 MV/cm or above) in product of dielectric constant .epsilon..sub.i and dielectric breakdown field strength E.sub.ib is essential for realizing an EL element which can operate stably at a low voltage. Such dielectric film is also required which can withstand heat treatments at high temperatures above 500.degree. C. and is proof against clouding and in which the electrical breakdown caused by a minute fault produced in the process of film formation is self-healed. A film material which satisfies all of these requirements could be obtained from a TiO.sub.2 -BaO based composition by partially substituting the position of Ti with Sn, Zr or Hf and also partially substituting the position of Ba with Ca or Mg. By using these dielectric films, it is possible to obtain a low-voltage drive thin-film electroluminescent element which are high in production yield and reliability.
    • 在介电常数εi和介电击穿场强Eib的乘积中高(140MV / cm以上)的电介质薄膜的开发对于实现能够在低电压下稳定运行的EL元件是必不可少的。 也需要这样的电介质膜,其能够承受高于500℃的高温下的热处理,并且防止混浊,并且其中由成膜过程中产生的微小故障引起的电击穿是自愈的。 满足所有这些要求的薄膜材料可以通过用Sn,Zr或Hf部分取代Ti的位置并且还用Ca或Mg部分取代Ba的位置,从TiO 2 -BaO基组合物获得。 通过使用这些电介质膜,可以获得高产率和可靠性的低电压驱动薄膜电致发光元件。