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1. 发明授权

US06849555B2 Wafer processing apparatus and wafer processing method using the same 有权
标题翻译：晶圆加工装置及使用其的晶片加工方法
公开(公告)号：US06849555B2
公开(公告)日：2005-02-01
申请号：US10449522
申请日：2003-05-30
申请人： Jong-myeong Lee , Byung-hee Kim , Myoung bum Lee , Ju-young Yun , Gil-heyun Choi
发明人： Jong-myeong Lee , Byung-hee Kim , Myoung bum Lee , Ju-young Yun , Gil-heyun Choi
IPC分类号： C23C14/56 , C23C16/44 , H01L21/00 , H01L21/02 , H01L21/285 , H01L21/302 , H01L21/461 , H01L21/677 , H01L21/768
CPC分类号： H01L21/67167 , H01L21/2855 , H01L21/28556 , H01L21/67017 , H01L21/67201 , H01L21/67739 , H01L21/76882 , H01L21/76888 , Y10S438/974
摘要： An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.
摘要翻译：提供了可用于形成具有多层结构的金属布线层和使用其的晶片处理方法的集成的原位簇型晶片处理装置。晶片处理装置包括可以排出并具有多个闸阀的传送室，多个真空处理室，每个真空处理室可以经由一个闸阀连接到传送室;以及负载锁定室，其可以被排出并且可连接到用于将氧基气体进料到负载锁定室中的第一气体供给管线。在晶片处理方法中，在一个真空处理室中的晶片上形成预定层。晶片上的预定层在负载锁定室或氧气氛室中被氧化。

2. 发明授权

US08265720B2 Sliding device for cellular phone 失效
标题翻译：手机滑动装置
公开(公告)号：US08265720B2
公开(公告)日：2012-09-11
申请号：US12298990
申请日：2007-05-23
申请人： Sung-Sang Ahn , Ju-Young Yun
发明人： Sung-Sang Ahn , Ju-Young Yun
IPC分类号： H04M1/00
CPC分类号： H04M1/0237 , Y10T16/538
摘要： Disclosed herein is a hinge device for a cellular phone, which has no device housing and thus, can achieve a greater slimness of the cellular phone and reduce the generation of a noise during a sliding operation of a slide body included in the cellular phone. The hinge device includes a first push rod connected to a main body of the cellular phone and having a pin and a pin hole, and a second push rod connected to a slide body of the cellular phone and having a pin and a pin hole. The pin of the first push rod is penetrated through the pin hole of the second push rod, and the pin of the second push rod is penetrated through the pin hole of the first push rod. A spring is provided around each pin.
摘要翻译：这里公开了一种用于蜂窝电话的铰链装置，其不具有装置外壳，因此可以实现蜂窝电话的更小的细度，并且在包括在蜂窝电话中的滑动体的滑动操作期间减少噪声的产生。铰链装置包括连接到蜂窝电话的主体并具有销和针孔的第一推杆和连接到蜂窝电话的滑动主体并具有销和销孔的第二推杆。第一推杆的销穿过第二推杆的销孔，第二推杆的销钉穿过第一推杆的销孔。每个引脚周围都设有一个弹簧。

3. 发明申请

US20100154168A1 HINGE DEVICE FOR CELLULAR PHONE 失效
标题翻译：蜂窝电话用铰链装置
公开(公告)号：US20100154168A1
公开(公告)日：2010-06-24
申请号：US12298990
申请日：2007-05-23
申请人： Sung-Sang Ahn , Ju-Young Yun
发明人： Sung-Sang Ahn , Ju-Young Yun
IPC分类号： H04M1/02
CPC分类号： H04M1/0237 , Y10T16/538
摘要： Disclosed herein is a hinge device for a cellular phone, which has no device housing and thus, can achieve a greater slimness of the cellular phone and reduce the generation of a noise during a sliding operation of a slide body included in the cellular phone. The hinge device includes a first push rod connected to a main body of the cellular phone and having a pin and a pin hole, and a second push rod connected to a slide body of the cellular phone and having a pin and a pin hole. The pin of the first push rod is penetrated through the pin hole of the second push rod, and the pin of the second push rod is penetrated through the pin hole of the first push rod. A spring is provided around each pin.
摘要翻译：这里公开了一种用于蜂窝电话的铰链装置，其不具有装置外壳，因此可以实现蜂窝电话的更小的细度，并且在包括在蜂窝电话中的滑动体的滑动操作期间减少噪声的产生。铰链装置包括连接到蜂窝电话的主体并具有销和针孔的第一推杆和连接到蜂窝电话的滑动主体并具有销和销孔的第二推杆。第一推杆的销穿过第二推杆的销孔，第二推杆的销钉穿过第一推杆的销孔。每个引脚周围都设有一个弹簧。

4. 发明授权

US07384866B2 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer 有权
标题翻译：通过处理阻挡金属层形成半导体器件的金属互连的方法
公开(公告)号：US07384866B2
公开(公告)日：2008-06-10
申请号：US11095006
申请日：2005-03-31
申请人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
发明人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
IPC分类号： H01L21/4763 , H01L21/44 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76876 , H01L21/76879 , H01L21/76882 , H01L2221/1089
摘要： A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.
摘要翻译：半导体器件的金属互连通过在衬底上形成包括孔的电介质图案，并在孔的外部和电介质层图案上形成阻挡金属层来制造。至少一些阻挡金属层被氧化。在孔的氧化阻挡金属层上选择性地形成抗成核层，该氧化的阻挡金属层露出孔中的氧化的阻挡金属层。然后在孔中的暴露的氧化阻挡层上选择性地形成金属层。

5. 发明授权

US06586340B2 Wafer processing apparatus and wafer processing method using the same 有权
公开(公告)号：US06586340B2
公开(公告)日：2003-07-01
申请号：US10098029
申请日：2002-03-13
申请人： Jong-myeong Lee , Byung-hee Kim , Myoung bum Lee , Ju-young Yun , Gil-heyun Choi
发明人： Jong-myeong Lee , Byung-hee Kim , Myoung bum Lee , Ju-young Yun , Gil-heyun Choi
IPC分类号： H01L21302
CPC分类号： H01L21/67167 , H01L21/2855 , H01L21/28556 , H01L21/67017 , H01L21/67201 , H01L21/67739 , H01L21/76882 , H01L21/76888 , Y10S438/974
摘要： An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.

6. 发明申请

US20050179141A1 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer 有权
公开(公告)号：US20050179141A1
公开(公告)日：2005-08-18
申请号：US11095006
申请日：2005-03-31
申请人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
发明人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L21/4763 , H01L23/52
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76876 , H01L21/76879 , H01L21/76882 , H01L2221/1089
摘要： A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

7. 发明授权

US06171958B2 Process for preparation of diffusion barrier for semiconductor 失效
标题翻译：制备半导体扩散阻挡层的工艺
公开(公告)号：US06171958B2
公开(公告)日：2001-01-09
申请号：US09006948
申请日：1998-01-14
申请人： Shi Woo Rhee , Ju Young Yun
发明人： Shi Woo Rhee , Ju Young Yun
IPC分类号： H01L2144
CPC分类号： H01L21/76841 , C23C16/34
摘要： A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.
摘要翻译：一种在半导体衬底上制备扩散阻挡层的方法，包括：在H 2等离子体流下，使用有机钛化合物在所述衬底上进行TiNx薄膜的远程等离子体增强金属有机化学气相沉积，其中x为0.1〜提供了具有低碳含量和低电阻率的TiNx薄膜。

8. 发明申请

US20110231251A1 Digital broadcast network system for providing widget service and operating method thereof 审中-公开
标题翻译：用于提供小部件服务的数字广播网络系统及其操作方法
公开(公告)号：US20110231251A1
公开(公告)日：2011-09-22
申请号：US12662947
申请日：2010-05-13
申请人： Ho Yeon Jang , Ju Young Yun
发明人： Ho Yeon Jang , Ju Young Yun
IPC分类号： G06Q30/00 , H04N7/025 , G06Q20/00
CPC分类号： H04N21/812 , G06Q30/02 , G06Q30/0241 , G06Q30/0251 , H04N21/4886
摘要： Provided are a digital broadcast network system for providing a widget service and an operating method thereof The digital broadcast network system includes a communication network, a broadcast terminal, and a broadcasting station system. The broadcasting station system provides widget advertisement contents, received from a widget content provider, to the broadcast terminal. The broadcast terminal outputs the received widget advertisement contents to a display unit in response to a widget display control signal, and transmits product purchase information to the broadcasting station system when receiving a purchase request signal for products included in the widget advertisement contents.
摘要翻译：提供了一种用于提供小窗口服务的数字广播网络系统及其操作方法。数字广播网络系统包括通信网络，广播终端和广播站系统。广播电台系统向广播终端提供从小窗口内容提供者接收到的窗口小部件广告内容。广播终端响应于小窗口显示控制信号将接收到的窗口小部件广告内容输出到显示单元，并且当接收到包含在窗口小部件广告内容中的商品的购买请求信号时，向广播电台系统发送商品购买信息。

9. 发明授权

US07830505B2 Structure for diagnosis system of reaction process 有权
标题翻译：反应过程诊断系统结构
公开(公告)号：US07830505B2
公开(公告)日：2010-11-09
申请号：US12222332
申请日：2008-08-07
申请人： Sang Woo Kang , Ju Young Yun , Dae Jin Seong , Yong Hyeon Shin
发明人： Sang Woo Kang , Ju Young Yun , Dae Jin Seong , Yong Hyeon Shin
IPC分类号： G01J3/30
CPC分类号： G01N21/3504 , G01N21/031 , G01N2021/151
摘要： The present invention relates to a spectroscopy analyzer for real-time diagnostics of process, and more particularly, to a spectroscopy analyzer for real-time diagnostics of process, in which a beam is injected to a reaction byproduct or a reactant and then an output beam is measured, thereby performing quantitative and qualitative analysis of the reaction byproduct or the reactant.
摘要翻译：本发明涉及一种用于过程实时诊断的光谱分析仪，更具体地说，涉及用于对工艺进行实时诊断的光谱分析仪，其中将光束注入反应副产物或反应物，然后输出光束，由此对反应副产物或反应物进行定量和定性分析。

10. 发明授权

US06955983B2 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer 有权
标题翻译：通过处理阻挡金属层形成半导体器件的金属互连的方法
公开(公告)号：US06955983B2
公开(公告)日：2005-10-18
申请号：US10373368
申请日：2003-02-24
申请人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
发明人： Ju-young Yun , Gil-heyun Choi , Byung-hee Kim , Jong-myeong Lee , Seung-gil Yang , Jung-hun Seo
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76876 , H01L21/76879 , H01L21/76882 , H01L2221/1089
摘要： A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.
摘要翻译：半导体器件的金属互连通过在衬底上形成包括孔的电介质图案，并在孔的外部和电介质层图案上形成阻挡金属层来制造。至少一些阻挡金属层被氧化。在孔的氧化阻挡金属层上选择性地形成抗成核层，该氧化的阻挡金属层露出孔中的氧化的阻挡金属层。然后在孔中的暴露的氧化阻挡层上选择性地形成金属层。

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