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1. 发明授权

US4513623A Transducer housing employing crimped leads 失效
标题翻译：使用压接引线的传感器外壳
公开(公告)号：US4513623A
公开(公告)日：1985-04-30
申请号：US530525
申请日：1983-09-09
申请人： Anthony D. Kurtz , Joseph R. Mallon, Jr.
发明人： Anthony D. Kurtz , Joseph R. Mallon, Jr.
IPC分类号： G01L9/00 , G01L19/14 , G01L9/06
CPC分类号： G01L19/0084 , G01L19/14 , G01L19/143
摘要： A transducer housing consists of a first and a second section. The first section contains an internal hollow into which a transistor header is mounted. The header, as mounted in the first section, is firmly secured within the section by means of a locking ring or other arrangement. Located in the internal hollow of the first section is a printed circuit board which has a plurality of apertures on the surface thereof each of which communicates with an extending tubular post on the opposite surface. Leads from the header are directed through the apertures in the printed circuit board and extend into the tubular posts. The second housing section is emplaced on the first section and contains a series of hollow metal tubular connectors or posts. These are inserted over the metal tubular posts of the header containing the leads and are crimped so that the posts of the transistor header as well as the leads are connected both electrically and mechanically to the tubular posts extending from the second housing section. Based on the above noted configuration, the housing sections serve to hold the transducer as mounted in the header in a firm and fixed position while enabling installation and interconnection of the transistor header in a rapid and simple manner based on the fact that the leads emanating from the header are crimped internally within the housing sections.
摘要翻译：传感器外壳由第一和第二部分组成。第一部分包含安装晶体管集管的内部空心。安装在第一部分中的头部通过锁定环或其他布置牢固地固定在该部分内。位于第一部分的内部中空部分中的印刷电路板在其表面上具有多个孔，每个孔与相对表面上的延伸管状柱连通。从集管引出的引导通过印刷电路板中的孔并延伸到管状柱中。第二壳体部分放置在第一部分上并且包含一系列中空金属管状连接器或柱。这些插入到包含引线的插头的金属管状柱上，并且被压接，使得晶体管集管的端子以及引线电连接和机械连接到从第二壳体部分延伸的管状柱体。基于上述配置，壳体部分用于将固定在集管中的换能器固定在固定位置，同时能够以快速且简单的方式安装和互连晶体管集管，基于以下事实：从插头内部压接在外壳部分内。

2. 发明授权

US4483196A Tubular transducer structures 失效
标题翻译：管状传感器结构
公开(公告)号：US4483196A
公开(公告)日：1984-11-20
申请号：US472851
申请日：1983-03-07
申请人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
发明人： Anthony D. Kurtz , Joseph R. Mallon, Jr. , Timothy A. Nunn
IPC分类号： G01L9/00 , G01L9/06
CPC分类号： G01L9/0052 , G01L9/0002
摘要： A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.
摘要翻译：压力传感器采用“D”形横截面的管状玻璃结构，“D”形构造的弓形部分基本上比基部部分厚。传感器阵列定位在基部的下侧，同时压力传导流体被引导通过管状构件以提供基部的偏转，以使传感器阵列提供指示流体介质中的压力变化的输出。位于基座下侧的传感器阵列与导电介质电气和机械隔离。

3. 发明授权

US4443293A Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas 失效
标题翻译：使用具有准矩形有源区域的垂直壁隔膜制造换能器结构的方法
公开(公告)号：US4443293A
公开(公告)日：1984-04-17
申请号：US399422
申请日：1982-07-19
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
IPC分类号： G01L9/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01L9/0042 , G01L9/0054
摘要： There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.
摘要翻译：公开了采用准矩形有源区的矩形隔膜。构造的隔膜具有长宽比大于3:1的纵横比。通过各向异性蚀刻技术形成膜片的有效面积，其是在向膜片施加力时最容易偏转的区域，以提供陡峭的垂直侧壁。如此描述的隔膜结构表现为对施加的力或压力，最大纵向应力和最小横向应力的响应，并且可以适应位于隔膜的有效区域内的压阻元件。

4. 发明授权

US4333349A Binary balancing apparatus for semiconductor transducer structures 失效
标题翻译：用于半导体传感器结构的二进制平衡装置
公开(公告)号：US4333349A
公开(公告)日：1982-06-08
申请号：US194034
申请日：1980-10-06
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
IPC分类号： G01L1/22 , G01L9/00 , G01L9/06 , G01L19/04
CPC分类号： G01L9/0054 , G01L1/2281 , G01L9/06
摘要： There is disclosed a balancing network for a piezoresistive semiconductor bridge configuration. The balancing network comprises a plurality of series resistors arranged in series with the sensing elements in the bridge configuration. Each resistor differs from the previous one according to a power of two to form a binary ladder arrangement. The individual resistors are associated with terminals to allow the transducer manufacturer to selectively short one or more resistors to provide zero balance compensation. The resistors are located on the nonactive portion of the semiconductor substrate and are fabricated by the same techniques employed for fabrication of the semiconductor piezoresistive sensing elements to assure temperature tracking of the unit with the desired temperature operating range.
摘要翻译：公开了一种用于压阻半导体桥结构的平衡网络。平衡网络包括与桥式结构中的感测元件串联布置的多个串联电阻器。每个电阻器根据两者的功率而不同于前一个电阻器，以形成二进制梯形布置。各个电阻器与端子相关联，以允许换能器制造商选择性地短路一个或多个电阻器以提供零平衡补偿。电阻器位于半导体衬底的非活性部分上，并且通过用于制造半导体压阻式感测元件的相同技术制造，以确保具有所需温度操作范围的单元的温度跟踪。

5. 发明授权

US4236137A Semiconductor transducers employing flexure frames 失效
标题翻译：采用挠性框架的半导体传感器
公开(公告)号：US4236137A
公开(公告)日：1980-11-25
申请号：US21960
申请日：1979-03-19
申请人： Anthony D. Kurtz , Joseph R. Mallon , Timothy A. Nunn
发明人： Anthony D. Kurtz , Joseph R. Mallon , Timothy A. Nunn
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0054 , G01L9/0042
摘要： A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.
摘要翻译：压力传感器采用半导体膜片，其上表面具有由预定宽度的连续凹槽包围或“框起”的梯形横截面的中心凸台区域。压电传感器形成在所述隔膜的底表面上，第一传感器邻近所述槽的外边缘，另一个传感器平行于所述第一传感器并与所述槽的内边缘相邻，所述凹槽用作应力集中区域，以使所述传感器，以在向所述隔膜施加力时提供相对较大的线性输出。

6. 发明授权

US4063209A Integral transducer assemblies employing built-in pressure limiting 失效
标题翻译：采用内置压力限制的积分换能器组件
公开(公告)号：US4063209A
公开(公告)日：1977-12-13
申请号：US573624
申请日：1975-05-01
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
IPC分类号： G01L9/00 , H01C10/10 , H01C17/00 , G01L1/22
CPC分类号： G01L19/147 , G01L9/0042 , G01L9/0054 , H01C10/10 , H01C17/00
摘要： A transducer of an H-shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.
摘要翻译： H形横截面的换能器采用相对于位于所述凹陷中的扩散压电电感器的线宽度的凹陷。凹陷被玻璃构件密封，该玻璃构件作为超过额定力的所有力的换能器的“停止”，这导致相对于根据所述电阻器选择的所述凹陷的深度的最大隔膜偏转线宽和整个膜片直径。

7. 发明授权

US3930823A High temperature transducers and housing including fabrication methods 失效
标题翻译：高温转换器和外壳包括制造方法
公开(公告)号：US3930823A
公开(公告)日：1976-01-06
申请号：US358143
申请日：1973-05-07
申请人： Anthony D. Kurtz , Joseph R. Mallon, Jr.
发明人： Anthony D. Kurtz , Joseph R. Mallon, Jr.
IPC分类号： G01L9/00 , C03C29/00
CPC分类号： G01L9/0055
摘要： A dielectrically isolated pressure transducer comprises a silicon diaphragm having on a surface thereof at least one piezoresistive sensor mounted in close proximity with a dielectric insulator, the diaphragm is secured about a non-active peripheral area to an annular ring housing by a glass bond fabricated from a glass material having a low melting temperature when compared to ordinary glass.

8. 发明授权

US4739298A High temperature transducers and methods of manufacturing 失效
标题翻译：高温传感器和制造方法
公开(公告)号：US4739298A
公开(公告)日：1988-04-19
申请号：US706889
申请日：1985-02-28
申请人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0055 , Y10T29/49103
摘要： A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.
摘要翻译：高温换能器由具有单层硅基底层的第一部分组成，该层被氧化物涂覆。将高温玻璃的薄层溅射在基底层的氧化物层上。通过扩散N型硅晶片形成p +层来形成第二部分。第一和第二部分通过阳极结合在一起，其中p +层被固定到玻璃层以形成复合结构。然后去除N型材料并在p +层中形成压阻电流。该结构提供了一个在宽工作范围内表现出稳定运行参数的高温换能器。

9. 发明授权

US4412203A Housing and interconnection assembly for a pressure transducer 失效
标题翻译：用于压力传感器的壳体和互连组件
公开(公告)号：US4412203A
公开(公告)日：1983-10-25
申请号：US301108
申请日：1981-09-10
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L19/0084 , G01L19/143
摘要： A housing comprises a first top cylindrical section having an internal hollow which is manifested by three concentric sections, each of a larger diameter to give the sidewall of the housing a step-like cross section. A transducer assembly is positioned within the hollow of the top section and bonded to the inner wall. An annular ring is positioned in the hollow within the second section and accommodates small diameter wires directed from said transducer assembly through the aperture and bonded to metallized land areas on the undersurface of the annular member. The metallized areas also contain a separate conductive post which is directed from the land areas. A second bottom housing accommodates tubular conductive members which are aligned with the post member. When the second housing is emplaced within the first housing the posts are positioned within the tubular conductor members where they are welded to the tubular members to form a permanent assembly. The housing provided is extremely rugged and is adapted for operation in deleterious environments.
摘要翻译：壳体包括具有内部空心的第一顶部圆柱形部分，其由三个同心部分表现，每个具有较大的直径，以使壳体的侧壁呈阶梯状横截面。换能器组件定位在顶部的中空部内并且结合到内壁。环形环位于第二部分内的中空部分中，并容纳从所述换能器组件通过孔引导的小直径线，并且接合到环形构件的下表面上的金属化区域。金属化区域还包含从陆地区域引导的单独的导电柱。第二底部壳体容纳与柱构件对准的管状导电构件。当第二壳体放置在第一壳体内时，柱被定位在管状导体构件内，在它们中焊接到管状构件以形成永久性组件。所提供的外壳非常坚固，适用于有害环境中的操作。

10. 发明授权

US4406992A Semiconductor pressure transducer or other product employing layers of single crystal silicon 失效
标题翻译：半导体压力传感器或采用单晶硅层的其他产品
公开(公告)号：US4406992A
公开(公告)日：1983-09-27
申请号：US255461
申请日：1981-04-20
申请人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L1/22 , G01L9/00
CPC分类号： G01L1/2293 , G01L9/0055
摘要： A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
摘要翻译：单晶硅衬底在表面上形成由一系列平行凹槽表现的光栅图案，电介质层在所述表面上热生长以在所述电介质的相对表面上复制所述图案，并且沉积在所述相对面上的硅层所述电介质的表面是由所述光栅确定的单晶硅。所形成的结构使得能够选择性地处理沉积的单晶层以提供至少一个压阻感测元件，从而提供具有集电器或基板以及单晶硅的感测元件的换能器，并通过所述介电层介电隔离。

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