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1. 发明申请

US20070261011A1 MODELING SMALL MOSFETS USING ENSEMBLE DEVICES 失效
标题翻译：使用ENSEMBLE器件建模小型MOSFET
公开(公告)号：US20070261011A1
公开(公告)日：2007-11-08
申请号：US11381613
申请日：2006-05-04
申请人： Robinson Pino , Henry Trombley , Josef Watts
发明人： Robinson Pino , Henry Trombley , Josef Watts
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A method of modeling statistical variation of field effect transistors having fingers physically measures characteristics of existing transistors and extracts a scaled simulation based on the characteristics of the existing transistors using a first model. The method creates synthetic single finger data using the scaled simulation. The method physically measures characteristics of existing pairs of matched transistors and extracts random dopant fluctuations from the characteristics of the existing pairs of matched transistors using a second model that is different than the first model. The method extracts a single finger from the synthetic single finger data and the random dopant fluctuations using the first model. The method can also create an ensemble model by determining the skew between a typical single device model and a typical ensemble model. The method adjusts parameters of the first model to cause the single finger to match targets for the single finger. Also, the method produces the centered scalable single finger model (model C) after the adjustments are complete.
摘要翻译：具有手指的场效应晶体管的统计变化的模型的方法物理地测量现有晶体管的特性，并且基于使用第一模型的现有晶体管的特性提取缩放模拟。该方法使用缩放模拟创建合成单指数据。该方法物理地测量现有的匹配晶体管对的特性，并使用不同于第一模型的第二模型从现有的匹配晶体管对的特性中提取随机掺杂物波动。该方法使用第一模型从合成单指数据和随机掺杂剂波动提取单个手指。该方法还可以通过确定典型的单个设备模型和典型的集合模型之间的偏差来创建集合模型。该方法调整第一个模型的参数，使单个手指匹配单个手指的目标。此外，在调整完成后，该方法产生居中的可伸缩单指模型（模型C）。

2. 发明申请

US20060100873A1 CIRCUIT STATISTICAL MODELING FOR PARTIALLY CORRELATED MODEL PARAMETERS 失效
标题翻译：部分相关模型参数的电路统计建模
公开(公告)号：US20060100873A1
公开(公告)日：2006-05-11
申请号：US10904307
申请日：2004-11-03
申请人： Calvin Bittner , Steven Grundon , Yoo-Mi Lee , Ning Lu , Josef Watts
发明人： Calvin Bittner , Steven Grundon , Yoo-Mi Lee , Ning Lu , Josef Watts
IPC分类号： G10L15/14
CPC分类号： G06F17/5036
摘要： A method, system and program product are disclosed for statistical modeling an integrated circuit that provides information about partial correlations between model parameters. The invention determines a variance-covariance matrix for data to be modeled; conducts principal component analysis on the variance-covariance matrix; and creates a statistical model with an independent distribution for each principal component, allowing calculation of each individual model parameter as a weighted sum by a circuit simulator. The statistical model provides information about how well individual transistors will track one another based on layout similarity. This allows the designer to quantify and take advantage of design practices that make all transistors similar, for example, by orienting all gates in the same direction. A method, system and program product for simulating a circuit using the statistical model are also included.
摘要翻译：公开了一种用于统计建模集成电路的方法，系统和程序产品，其提供关于模型参数之间的部分相关性的信息。本发明确定要建模的数据的方差 - 协方差矩阵; 对方差协方差矩阵进行主成分分析; 并为每个主成分创建一个具有独立分布的统计模型，允许通过电路模拟器计算每个单独的模型参数作为加权和。统计模型提供了有关单个晶体管基于布局相似性将彼此跟踪的信息。这允许设计者量化并利用使所有晶体管相似的设计实践，例如通过将所有栅极定向在相同的方向。还包括用于使用统计模型模拟电路的方法，系统和程序产品。

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