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    • 1. 发明申请
    • MODELING SMALL MOSFETS USING ENSEMBLE DEVICES
    • 使用ENSEMBLE器件建模小型MOSFET
    • US20070261011A1
    • 2007-11-08
    • US11381613
    • 2006-05-04
    • Robinson PinoHenry TrombleyJosef Watts
    • Robinson PinoHenry TrombleyJosef Watts
    • G06F17/50
    • G06F17/5036
    • A method of modeling statistical variation of field effect transistors having fingers physically measures characteristics of existing transistors and extracts a scaled simulation based on the characteristics of the existing transistors using a first model. The method creates synthetic single finger data using the scaled simulation. The method physically measures characteristics of existing pairs of matched transistors and extracts random dopant fluctuations from the characteristics of the existing pairs of matched transistors using a second model that is different than the first model. The method extracts a single finger from the synthetic single finger data and the random dopant fluctuations using the first model. The method can also create an ensemble model by determining the skew between a typical single device model and a typical ensemble model. The method adjusts parameters of the first model to cause the single finger to match targets for the single finger. Also, the method produces the centered scalable single finger model (model C) after the adjustments are complete.
    • 具有手指的场效应晶体管的统计变化的模型的方法物理地测量现有晶体管的特性,并且基于使用第一模型的现有晶体管的特性提取缩放模拟。 该方法使用缩放模拟创建合成单指数据。 该方法物理地测量现有的匹配晶体管对的特性,并使用不同于第一模型的第二模型从现有的匹配晶体管对的特性中提取随机掺杂物波动。 该方法使用第一模型从合成单指数据和随机掺杂剂波动提取单个手指。 该方法还可以通过确定典型的单个设备模型和典型的集合模型之间的偏差来创建集合模型。 该方法调整第一个模型的参数,使单个手指匹配单个手指的目标。 此外,在调整完成后,该方法产生居中的可伸缩单指模型(模型C)。