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1. 发明申请

US20090191328A1 POLYMER FOR FORMING HYDROPHOBIC LAYER, HYDROPHOBIC LAYER COMPRISING THE POLYMER AND ELECTRONIC ARTICLE COMPRISING THE HYDROPHOBIC LAYER 失效
标题翻译：聚合物形成疏水层，包含聚合物和包含疏水层的电子文章的疏水层
公开(公告)号：US20090191328A1
公开(公告)日：2009-07-30
申请号：US12178591
申请日：2008-07-23
申请人： Won-cheol JUNG , Bum-jae LEE , Jong-seop LEE , Young-nam KWON , Tae-jung KIM
发明人： Won-cheol JUNG , Bum-jae LEE , Jong-seop LEE , Young-nam KWON , Tae-jung KIM
IPC分类号： C08F214/18 , B05D5/12
CPC分类号： C09D125/08 , C09D125/10
摘要： Provided are hydrophobic layer formed by polymer represented by Formula 1 below and has a weight average molecular weight of about 10,000 to about 500,000 g/mol, hydrophobic layer including the polymer and an electronic articles including the hydrophobic layer: wherein Q1, and Q2 are independently linear or branched C1-C10 alkylene groups, R1 and R2 are independently ether and/or ester containing substituents, R3 to R7 are independently selected from a hydrogen atom, a halogen atom, a cyano group, an amino group, a C1-C10 alkyl group and a C6-C12 aryl group; and the ratio of a:b+c is from 10:1 to 1:1,000. A coated electronic article comprising the hydrophobic layer and a method of forming the coated electronic article are also provided.
摘要翻译：提供由以下通式1表示的聚合物形成的疏水层，其重均分子量为约10,000至约500,000g / mol，包含聚合物的疏水层和包含疏水层的电子制品：其中Q1和Q2独立地为直链或支链的C1-C10亚烷基，R1和R2独立地是醚和/或含酯取代基，R3至R7独立地选自氢原子，卤素原子，氰基，氨基，C1-C10烷基基团和C 6 -C 12芳基; a：b + c的比例为10:1〜1:1000。还提供了包括疏水层的涂覆的电子制品和形成涂覆的电子制品的方法。

2. 发明授权

US07679161B2 Semiconductor device comprising fuse sections 失效
标题翻译：包括熔断器部分的半导体器件
公开(公告)号：US07679161B2
公开(公告)日：2010-03-16
申请号：US11552928
申请日：2006-10-25
申请人： Myoung-Hee Han , Jong-Seop Lee
发明人： Myoung-Hee Han , Jong-Seop Lee
IPC分类号： H01L23/62
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： In an embodiment, a semiconductor device includes a first fuse cutting portion in which fuse lines are arranged transversely adjacent to each other, a first runner portion in which runner lines connected to the fuse lines are arranged transversely adjacent to each other but at smaller intervals than those of the fuse lines, and a first connection portion having connection lines between the fuse lines and the runner lines. An insulating barrier layer covers the connection portions so that post-process residues from fuse cutting do not cause electrical shorts between the closely formed runner lines.
摘要翻译：在一个实施例中，半导体器件包括第一熔丝切割部分，其中熔丝线彼此横向相邻布置;第一流道部分，其中连接到熔丝线的流道线横向彼此相邻布置，但间隔比熔丝线的那些，以及在熔丝线和流道线之间具有连接线的第一连接部分。绝缘阻挡层覆盖连接部分，使得来自熔丝切割的后处理残留物不会在紧密形成的流道线之间引起电短路。

3. 发明申请

US20070264874A1 Fuse structure of a semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件的保险丝结构及其制造方法
公开(公告)号：US20070264874A1
公开(公告)日：2007-11-15
申请号：US11797825
申请日：2007-05-08
申请人： Jong-Seop Lee
发明人： Jong-Seop Lee
IPC分类号： H01R13/68
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure of a semiconductor memory device may include a substrate including a fuse region, an insulation layer pattern having a multi-layered structure, and/or a plurality of fuse lines. The plurality of fuse lines may pass through an inner space of an opening portion of the insulation layer pattern having the multi-layered structure that exposes the fuse region and may be spaced apart from a surface of the fuse region.
摘要翻译：半导体存储器件的熔丝结构可以包括包括熔丝区域，具有多层结构的绝缘层图案和/或多个熔丝线的衬底。多个熔丝线可以穿过具有暴露熔丝区域的多层结构的绝缘层图案的开口部分的内部空间，并且可以与熔丝区域的表面间隔开。

4. 发明申请

US20100237394A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100237394A1
公开(公告)日：2010-09-23
申请号：US12659735
申请日：2010-03-19
申请人： Jai-Kyun Park , Hyeong-Sun Hong , Jong-Seop Lee , Yong-Il Kim , Yun-Sung Lee , Nam-Jung Kang , Jae-Hoon Song , Gil-Sub Kim
发明人： Jai-Kyun Park , Hyeong-Sun Hong , Jong-Seop Lee , Yong-Il Kim , Yun-Sung Lee , Nam-Jung Kang , Jae-Hoon Song , Gil-Sub Kim
IPC分类号： H01L27/108
CPC分类号： H01L27/0207 , H01L27/10855
摘要： A semiconductor memory device includes unit active regions, word lines extending in a first direction over the unit active region, bit lines extending on the word lines in a second direction substantially perpendicularly to the first direction, first pad contacts in contact with central portions of the unit active regions, the first pad contacts being arranged between the word lines, direct contacts electrically connected between the first pad contacts and the bit lines, second pad contacts in contact with edge portions of the unit active regions, the second pad contacts being arranged between the word lines and between the bit lines, buried contacts electrically connected to the second pad contacts, and capacitors electrically connected to the buried contacts.
摘要翻译：半导体存储器件包括单元有源区域，在单元有源区域上沿第一方向延伸的字线，沿着基本垂直于第一方向的第二方向在字线上延伸的位线，与第一方向的中心部分接触的第一焊盘触点所述第一焊盘触点布置在所述字线之间，直接触点电连接在所述第一焊盘触点和所述位线之间，所述第二焊盘触点与所述单元有源区域的边缘部分接触，所述第二焊盘触点布置在字线和位线之间，电连接到第二焊盘触点的埋入触点，以及电连接到埋入触点的电容器。

5. 发明授权

US07514736B2 Semiconductor device having a capacitor and a fabrication method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US07514736B2
公开(公告)日：2009-04-07
申请号：US11446674
申请日：2006-06-05
申请人： Sung-hun Hong , Myoung-hee Han , Jong-seop Lee
发明人： Sung-hun Hong , Myoung-hee Han , Jong-seop Lee
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10817 , H01L28/65 , H01L28/91
摘要： In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate having a memory cell array region and a peripheral region, a plurality of capacitors in the memory cell array region each having a storage electrode, a dielectric layer on the storage electrode, and a plate electrode on the dielectric layer, wherein an extended portion of the plate electrode extends in a direction toward the peripheral region, a dummy pattern in the peripheral region at an elevation above the semiconductor substrate that is substantially the same as that of the extended portion of the plate electrode and spaced apart from the extended portion of the plate electrode, an insulating layer formed on the plurality of capacitors in the cell array region and formed on the dummy pattern in the peripheral region, a first metal contact through the insulating layer between the extended portion of the plate electrode and the dummy pattern.
摘要翻译：在具有电容器的半导体器件及其制造方法中，半导体器件包括具有存储单元阵列区域和周边区域的半导体衬底，存储单元阵列区域中的多个电容器具有存储电极，电介质层和电介质层上的平板电极，其中平板电极的延伸部分沿着周边区域的方向延伸，在半导体衬底上方的外围区域中的虚拟图案基本上是与平板电极的延伸部分相同并与板电极的延伸部分间隔开，形成在电池阵列区域中的多个电容器上并形成在周边区域的虚设图案上的绝缘层，通过绝缘层在平板电极的延伸部分和虚拟图案之间的第一金属接触。

6. 发明授权

US08506840B2 Composition having ring structure and terminal amine groups, and use thereof as flue gas absorbent 有权
标题翻译：具有环结构和末端胺基的组合物及其作为烟道气吸收剂的用途
公开(公告)号：US08506840B2
公开(公告)日：2013-08-13
申请号：US12933024
申请日：2009-04-02
申请人： Ara Cho , Jong Seop Lee , Byoung Moo Min
发明人： Ara Cho , Jong Seop Lee , Byoung Moo Min
IPC分类号： C09K3/00
CPC分类号： B01D53/78 , B01D53/1493
摘要： Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted α-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP).
摘要翻译：公开了含有化合物和水的烟道气吸收剂组合物。该化合物具有环结构，并且包括邻近胺基的末端伯胺基和取代的α-碳原子。此外，公开了使用具有环结构和末端胺基的化合物作为烟道气吸收剂的溶液。吸收组合物包含与常规吸收剂相比具有优异吸收能力的环状结构化合物，因此显示出优异的性能，即烟道吸收率提高50〜100％，烟道气吸收能力提高200〜400％，相比之下目前使用的吸附剂如单乙醇胺（MEA）和2-氨基-2-甲基 - 丙醇（AMP）。

7. 发明授权

US08114467B2 Polymer for forming hydrophobic layer, hydrophobic layer comprising the polymer and electronic article comprising the hydrophobic layer 失效
标题翻译：用于形成疏水层的聚合物，包含聚合物的疏水层和包含疏水层的电子制品
公开(公告)号：US08114467B2
公开(公告)日：2012-02-14
申请号：US12178591
申请日：2008-07-23
申请人： Won-cheol Jung , Bum-jae Lee , Jong-seop Lee , Young-nam Kwon , Tae-jung Kim
发明人： Won-cheol Jung , Bum-jae Lee , Jong-seop Lee , Young-nam Kwon , Tae-jung Kim
IPC分类号： C08F214/18
CPC分类号： C09D125/08 , C09D125/10
摘要： Provided are hydrophobic layer formed by polymer represented by Formula 1 below and has a weight average molecular weight of about 10,000 to about 500,000 g/mol, hydrophobic layer including the polymer and an electronic articles including the hydrophobic layer: wherein Q1, and Q2 are independently linear or branched C1-C10 alkylene groups, R1 and R2 are independently ether and/or ester containing substituents, R3 to R7 are independently selected from a hydrogen atom, a halogen atom, a cyano group, an amino group, a C1-C10 alkyl group and a C6-C12 aryl group; and the ratio of a:b+c is from 10:1 to 1:1,000. A coated electronic article comprising the hydrophobic layer and a method of forming the coated electronic article are also provided.
摘要翻译：提供由以下通式1表示的聚合物形成的疏水层，其重均分子量为约10,000至约500,000g / mol，包含聚合物的疏水层和包含疏水层的电子制品：其中Q1和Q2独立地为直链或支链的C1-C10亚烷基，R1和R2独立地是醚和/或含酯取代基，R3至R7独立地选自氢原子，卤素原子，氰基，氨基，C1-C10烷基基团和C 6 -C 12芳基; a：b + c的比例为10:1〜1:1000。还提供了包括疏水层的涂覆的电子制品和形成涂覆的电子制品的方法。

8. 发明申请

US20110012058A1 Composition Having Ring Structure and Terminal Amine Groups, and Use Thereof as Flue Gas Absorbent 有权
标题翻译：具有环结构和末端胺基团的组合物及其用作烟道气体吸收剂
公开(公告)号：US20110012058A1
公开(公告)日：2011-01-20
申请号：US12933024
申请日：2009-04-02
申请人： Ara Cho , Jong Seop Lee , Byoung Moo
发明人： Ara Cho , Jong Seop Lee , Byoung Moo
IPC分类号： C09K3/00
CPC分类号： B01D53/78 , B01D53/1493
摘要： Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted α-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP).
摘要翻译：公开了含有化合物和水的烟道气吸收剂组合物。该化合物具有环结构，并且包括邻近胺基的末端伯胺基和取代的α-碳原子。此外，公开了使用具有环结构和末端胺基的化合物作为烟道气吸收剂的溶液。吸收组合物包含与常规吸收剂相比具有优异吸收能力的环状结构化合物，因此显示出优异的性能，即烟道吸收率提高50〜100％，烟道气吸收能力提高200〜400％，相比之下目前使用的吸附剂如单乙醇胺（MEA）和2-氨基-2-甲基 - 丙醇（AMP）。

9. 发明申请

US20090203204A1 Methods of manufacturing semiconductor device having recess channel array transistor 失效
标题翻译：制造具有凹槽通道阵列晶体管的半导体器件的方法
公开(公告)号：US20090203204A1
公开(公告)日：2009-08-13
申请号：US12213230
申请日：2008-06-17
申请人： Gil-sub Kim , Yong-il Kim , Jong-seop Lee , Jai-kyun Park , Yun-sung Lee , Nam-jung Kang
发明人： Gil-sub Kim , Yong-il Kim , Jong-seop Lee , Jai-kyun Park , Yun-sung Lee , Nam-jung Kang
IPC分类号： H01L21/28
CPC分类号： H01L21/28061 , H01L29/1037 , H01L29/4236 , H01L29/4941 , H01L29/66621
摘要： Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.
摘要翻译：提供了具有RCAT的半导体器件的制造方法。该方法包括形成具有形成在半导体衬底的有源区中的第一深度的第一凹部和具有小于在隔离层中形成的第一深度的第二深度的第二凹部。通过将隔离层从隔离层的上表面移除希望的厚度来减小第二凹部的深度。栅电介质层形成在第一凹槽的内壁上，栅极形成在栅介质层上。

10. 发明申请

US20070096251A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070096251A1
公开(公告)日：2007-05-03
申请号：US11552928
申请日：2006-10-25
申请人： Myoung-Hee HAN , Jong-Seop LEE
发明人： Myoung-Hee HAN , Jong-Seop LEE
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： In an embodiment, a semiconductor device includes a first fuse cutting portion in which fuse lines are arranged transversely adjacent to each other, a first runner portion in which runner lines connected to the fuse lines are arranged transversely adjacent to each other but at smaller intervals than those of the fuse lines, and a first connection portion having connection lines between the fuse lines and the runner lines. An insulating barrier layer covers the connection portions so that post-process residues from fuse cutting do not cause electrical shorts between the closely formed runner lines.
摘要翻译：在一个实施例中，半导体器件包括第一熔丝切割部分，其中熔丝线彼此横向相邻布置;第一流道部分，其中连接到熔丝线的流道线横向彼此相邻布置，但间隔比熔丝线的那些，以及在熔丝线和流道线之间具有连接线的第一连接部分。绝缘阻挡层覆盖连接部分，使得来自熔丝切割的后处理残留物不会在紧密形成的流道线之间引起电短路。

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