会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Device for putt-practice
    • 推杆实践装置
    • US06461246B1
    • 2002-10-08
    • US09947219
    • 2001-09-04
    • Dong-Min LeeBum-Jae Lee
    • Dong-Min LeeBum-Jae Lee
    • A63B6702
    • A63B69/3676A63B47/025A63B67/02A63B69/3614A63B69/3644A63B69/3661A63B69/3667A63B2071/0625A63B2210/50
    • A device for putt-practice is disclosed. This device has a first casing opened at its opposite ends, with a speed sensor provided at each end of the first casing and a ball inlet formed at one end of the first casing. A second casing, opened at its opposite ends, is axially connected to an end of the first casing, with a transparent window provided at the upper portion of the second casing for guiding a backstroke movement of a putter during an act of putting. This second casing also has a displaying means for displaying a target putting distance preset by a user, a practical backstroke distance of the putter, and putting results after the act of putting.
    • 公开了一种用于推杆实践的装置。 该装置具有在其相对端部开口的第一壳体,设置在第一壳体的每一端的速度传感器和形成在第一壳体的一端的球形入口。 在其相对端开口的第二壳体轴向地连接到第一壳体的端部,其中设置在第二壳体的上部处的透明窗口用于在放置作用期间引导推杆的仰泳运动。 该第二壳体还具有用于显示由用户预设的目标放置距离,推杆的实际后行距离以及放置动作之后的结果的显示装置。
    • 7. 发明授权
    • Semiconductor memory device having improved bit line sensing operation and method for driving power in a bit line sense amplifier of the semiconductor memory device
    • 具有改进的位线检测操作的半导体存储器件和用于驱动半导体存储器件的位线读出放大器中的功率的方法
    • US06859405B2
    • 2005-02-22
    • US10465634
    • 2003-06-20
    • Bum-Jae LeeSu-A KimKyu-Nam Lim
    • Bum-Jae LeeSu-A KimKyu-Nam Lim
    • G11C11/4091G11C7/06G11C7/00
    • G11C7/06G11C7/065G11C2207/065
    • A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.
    • 具有连接到位线对的位线读出放大器的半导体存储器件可以包括预充电部分,以将位线读出放大器的第一和第二驱动节点预充电到相等的电压电平。 该装置可以包括切换部分,其响应于在数据非访问模式期间施加的读出放大器驱动信号,将第一和第二预充电节点可操作地连接到第一和第二驱动节点。 为了驱动位线读出放大器的电力,可以在预充电状态下施加预充电电压,以将第一和第二驱动节点预充电到等电压电平,器件可以从预充电状态转移到操作状态以切断 施加的预充电电压,并且可以向第一和第二驱动节点施加驱动电压以为器件的位线读出放大器供电。