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1. 发明申请

US20080291601A1 Integrated Capacitor Arrangement for Ultrahigh Capacitance Values 有权
标题翻译：用于超高电容值的集成电容器布置
公开(公告)号：US20080291601A1
公开(公告)日：2008-11-27
申请号：US12092608
申请日：2006-11-02
申请人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L.A.M. Kemmeren , Derk Reefman , Johannes F.C.M. Verhoeven
发明人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L.A.M. Kemmeren , Derk Reefman , Johannes F.C.M. Verhoeven
IPC分类号： H01G4/228
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
摘要翻译：电子设备技术领域本发明涉及一种电子设备（300），其包括至少一个也可采取反向结构形式的沟槽电容器（302），立柱电容器。至少两个电介质层（312,316）和至少两个导电层（314,318）的交替层序列（308）设置在沟槽电容器或柱状电容器中，使得至少两个导电层通过至少两个电介质层中的相应电极彼此电隔离并且与衬底电隔离。提供一组内部接触焊盘（332,334,340），并且每个内部接触焊盘与相应的一个导电层或基板连接。通过为每个导电层提供单独的内部接触焊盘，开启一定范围的切换机会，允许将电容器的比电容调谐到期望值。因此，本发明的电子器件为不同沟槽电容器的导电层之间的导电层的多种组合，或者当使用多个沟槽时提供柔性的沟槽电容器制造平台。要求使用诸如电荷泵电路或DC-DC电压转换器的片上应用，其受益于本发明的电子器件可实现的超高电容密度和高击穿电压。

2. 发明授权

US08729665B2 Integration substrate with a ultra-high-density capacitor and a through-substrate via 有权
标题翻译：集成基板与超高密度电容器和贯通基板通孔
公开(公告)号：US08729665B2
公开(公告)日：2014-05-20
申请号：US12599494
申请日：2008-05-08
申请人： Johan H. Klootwijk , Freddy Roozeboom , Jaap Ruigrok , Derk Reefman
发明人： Johan H. Klootwijk , Freddy Roozeboom , Jaap Ruigrok , Derk Reefman
IPC分类号： H01L21/02
CPC分类号： H01L27/0805 , H01L23/481 , H01L28/90 , H01L2224/73204
摘要： An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.
摘要翻译：用于封装系统的集成衬底包括贯穿衬底通孔和沟槽电容器，其中沟槽填充物包括与电介质层交替布置的至少四个导电电容器电极层。 - 电容器电极层交替地连接到设置在第一或第二基板侧上的两个电容器端子中的相应一个。沟槽电容器和贯穿基板通孔形成在半导体衬底中的相应的沟槽开口和通孔中，其具有超过10微米的相等的横向延伸。除了其它优点之外，这种结构允许一体化衬底的特别成本有效的制造，因为可以同时制造衬底中的通孔开口和沟槽开口。

3. 发明申请

US20110209756A1 DEVICE FOR ADAPTABLE WAVELENGTH CONVERSION AND A SOLAR CELL 有权
标题翻译：适应波长转换和太阳能电池的装置
公开(公告)号：US20110209756A1
公开(公告)日：2011-09-01
申请号：US13127789
申请日：2009-11-10
申请人： Rogier A.H. Niessen , Willem F. Pasveer , Johan H. Klootwijk
发明人： Rogier A.H. Niessen , Willem F. Pasveer , Johan H. Klootwijk
IPC分类号： H01L31/0232 , G02B5/22 , G02B5/24
CPC分类号： H01L31/055 , G02B5/24 , G02B26/004 , G02F1/353 , G02F2001/13324 , H01L31/02322 , Y02E10/52
摘要： A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. The device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions.
摘要翻译：描述了用于适应性波长转换的装置和用于能量转换的装置。用于适应性波长转换的装置包括至少一层包括波长转换材料并被布置成接收和重新发射光束的层。该装置进一步布置成操纵该至少一层以在封闭状态下操作，其中该至少一层的表面基本上被波长转换材料覆盖并且处于打开状态，其中，所述至少一层基本上不被所述波长转换材料覆盖。用于适应性波长转换的装置可以与太阳能电池或光伏电池组合应用，从而使太阳能电池能够在变化的照明条件下接收具有合适光谱的辐射。

4. 发明申请

US20090302419A1 METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE 审中-公开
标题翻译：修改表面区域和电子设备的方法
公开(公告)号：US20090302419A1
公开(公告)日：2009-12-10
申请号：US11720322
申请日：2005-11-25
申请人： Antonius L A M Kemmeren , Freddy Roozeboom , Johan H. Klootwijk , Robertus A. M. Wolters
发明人： Antonius L A M Kemmeren , Freddy Roozeboom , Johan H. Klootwijk , Robertus A. M. Wolters
IPC分类号： H01L27/06 , H01L21/02 , H01L21/302
CPC分类号： H01L28/84 , H01L27/1087 , H01L29/66181
摘要： In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.
摘要翻译：在该方法中，特别是非晶硅的第一层被沉积在具有沟槽的衬底的表面上。该表面的一部分被保护层覆盖。此后，第一层通过在衬底表面上进行干蚀刻处理而被除去，同时保持在沟槽内。

5. 发明申请

US20090146760A1 ASSEMBLY, CHIP AND METHOD OF OPERATING 有权
标题翻译：组装，芯片和操作方法
公开(公告)号：US20090146760A1
公开(公告)日：2009-06-11
申请号：US12300813
申请日：2007-05-14
申请人： Derk Reefman , Roozeboom Freddy , Johan H. Klootwijk
发明人： Derk Reefman , Roozeboom Freddy , Johan H. Klootwijk
IPC分类号： H03H7/00
CPC分类号： H01L27/0805 , H01L23/3107 , H01L23/3128 , H01L23/4334 , H01L23/49575 , H01L23/5223 , H01L23/5227 , H01L23/642 , H01L23/645 , H01L25/16 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/01087 , H01L2924/1461 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： The chip (100) comprises a network of trench capacitors (102) and an inductor (114), wherein the trench capacitors (102) are coupled in parallel with a pattern of interconnects (113A,B, . . . ) that is designed so as to limit generation of eddy current induced by the inductor (114) in the interconnects (113A,B, . . . ). This allows the use of the chip (100) as a portion of a DC-DC converter, that is integrated in an assembly of a first chip and this—second chip (100). The inductor of this integrated DC-DC converter may be defined elsewhere within the assembly.
摘要翻译：芯片（100）包括沟槽电容器（102）和电感器（114）的网络，其中沟槽电容器（102）与设计的互连图案（113A，B ...）并联耦合以限制由互连（113A，B ...）中的电感器（114）引起的涡流的产生。这允许使用芯片（100）作为集成在第一芯片和第二芯片（100）的组件中的DC-DC转换器的一部分。该集成DC-DC转换器的电感器可以在组件内的其他地方定义。

6. 发明申请

US20080280435A1 Producing a Covered Through Substrate Via Using a Temporary Cap Layer 有权
标题翻译：通过使用临时盖层生成通过基板覆盖
公开(公告)号：US20080280435A1
公开(公告)日：2008-11-13
申请号：US12092605
申请日：2006-11-03
申请人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
发明人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/764 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer
摘要翻译：本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。根据本发明的第一方面，通过提供衬底沟槽具有孔的外涂层。外涂层中的孔留下去除盖层材料的分解产物的空间。根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。本发明的两种方法都是基于即使在基板开口被永久覆盖之前使用临时盖层的常见思想，在移除临时盖层之前

7. 发明授权

US09000292B2 Device for adaptable wavelength conversion and a solar cell 有权
标题翻译：适用于波长转换的设备和太阳能电池
公开(公告)号：US09000292B2
公开(公告)日：2015-04-07
申请号：US13127789
申请日：2009-11-10
申请人： Rogier A. H. Niessen , Willem F. Pasveer , Johan H. Klootwijk
发明人： Rogier A. H. Niessen , Willem F. Pasveer , Johan H. Klootwijk
IPC分类号： G02B5/24 , G02B26/00 , H01L31/0232 , G02F1/35 , G02F1/133
CPC分类号： H01L31/055 , G02B5/24 , G02B26/004 , G02F1/353 , G02F2001/13324 , H01L31/02322 , Y02E10/52
摘要： A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. The device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions.
摘要翻译：描述了用于适应性波长转换的装置和用于能量转换的装置。用于适应性波长转换的装置包括至少一层包括波长转换材料并被布置成接收和重新发射光束的层。该装置进一步布置成操纵该至少一层以在封闭状态下操作，其中该至少一层的表面基本上被波长转换材料覆盖并且处于打开状态，其中，所述至少一层基本上不被所述波长转换材料覆盖。用于适应性波长转换的装置可以与太阳能电池或光伏电池组合应用，从而使太阳能电池能够在变化的照明条件下接收具有合适光谱的辐射。

8. 发明授权

US08395914B2 DC-to-DC converter comprising a reconfigurable capacitor unit 有权
标题翻译： DC-DC转换器包括可重构电容器单元
公开(公告)号：US08395914B2
公开(公告)日：2013-03-12
申请号：US12597308
申请日：2008-05-08
申请人： Johan H. Klootwijk , Hendrik J. Bergveld , Freddy Roozeboom , Derk Reefman , Jaap Ruigrok
发明人： Johan H. Klootwijk , Hendrik J. Bergveld , Freddy Roozeboom , Derk Reefman , Jaap Ruigrok
IPC分类号： H02M3/07
CPC分类号： H01L27/0805 , H02M3/07
摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.
摘要翻译：本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层来生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

9. 发明授权

US08085524B2 Integrated capacitor arrangement for ultrahigh capacitance values 有权
标题翻译：用于超高电容值的集成电容器布置
公开(公告)号：US08085524B2
公开(公告)日：2011-12-27
申请号：US12092608
申请日：2006-11-02
申请人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
发明人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
IPC分类号： H01G4/228
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.
摘要翻译：电子设备包括至少一个也可以采取反向结构形式的沟槽电容器，立柱电容器。至少两个电介质层和至少两个导电层的交替层序列设置在沟槽电容器或柱状电容器上，使得至少两个导电层通过相应的电气彼此电隔离并且与衬底电隔离至少两个电介质层中的一个。提供了一组内部接触焊盘，并且每个内部接触焊盘与相应的一个导电层或与衬底连接。开启了一系列切换机会，可将电容器的比电容调谐到所需的值。

10. 发明申请

US20100230787A1 ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE 有权
标题翻译：包含改进电极的电气设备
公开(公告)号：US20100230787A1
公开(公告)日：2010-09-16
申请号：US12299325
申请日：2007-04-30
申请人： Lionel Guiraud , Francois Lecornec , Johan H. Klootwijk , Freddy Roozeboom , David D. R. Chevrie
发明人： Lionel Guiraud , Francois Lecornec , Johan H. Klootwijk , Freddy Roozeboom , David D. R. Chevrie
IPC分类号： H01L27/08
CPC分类号： H01L27/0805 , H01L27/10817 , H01L27/10829 , H01L27/10852 , H01L27/10861 , H01L28/40 , H01L28/82 , H01L28/90 , H01L29/6609 , H01L29/66181 , H01L29/861
摘要： The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.
摘要翻译：本发明涉及一种包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），该柱从第一表面沿第一方向（110）延伸，，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120）其特征在于，所述支柱包括沿柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。

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