专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6027996A Method of planarizing a pre-metal dielectric layer using chemical-mechanical polishing 失效
标题翻译：使用化学机械抛光对预金属介电层进行平面化的方法
公开(公告)号：US6027996A
公开(公告)日：2000-02-22
申请号：US885173
申请日：1997-06-30
申请人： Jiunh-Yuan Wu , Water Lur , Shih-Wei Sun
发明人： Jiunh-Yuan Wu , Water Lur , Shih-Wei Sun
IPC分类号： H01L21/3105 , H01L21/4763
CPC分类号： H01L21/31053
摘要： A method of planarizing a pre-metal dielectric layer using chemical-mechanical polishing, in order to alleviate the problem of resistance reduction when making products having poly-loads, includes providing a semiconductor substrate with a semiconductor component formed thereabove. A pre-metal dielectric layer is formed above the semiconductor substrate. Thereafter, the pre-metal dielectric layer is planarized using chemical-mechanical polishing. Next, a silicon-rich oxide layer, that has a characteristic gettering property which can be used to compensate for the weakening of the gettering ability of the pre-metal dielectric layer, due to the wearing out of the layer in a chemical-mechanical polishing operation, is formed above the pre-metal dielectric layer.
摘要翻译：使用化学机械抛光来平坦化预金属介电层的方法为了减轻制造具有多重负载的产品时的电阻降低的问题，包括提供半导体衬底上形成有半导体元件的方法。在半导体衬底上形成预金属介电层。此后，使用化学机械抛光对金属前介电层进行平面化。接下来，由于化学机械抛光中的层的磨损，具有特征吸气特性的富硅氧化物层可用于补偿预金属介电层的吸杂能力的弱化操作，形成在预金属介电层的上方。

2. 发明授权

US5885894A Method of planarizing an inter-layer dielectric layer 失效
标题翻译：平面化层间电介质层的方法
公开(公告)号：US5885894A
公开(公告)日：1999-03-23
申请号：US882303
申请日：1997-06-25
申请人： Jiunh-Yuan Wu , Water Lur , Shih-Wei Sun
发明人： Jiunh-Yuan Wu , Water Lur , Shih-Wei Sun
IPC分类号： C23C16/40 , H01L21/3105 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/401 , H01L21/02129 , H01L21/022 , H01L21/02274 , H01L21/31053 , H01L21/31612
摘要： A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operation, and eliminates the need for a high temperature densifying treatment for planarization. A chemical-mechanical polishing operation is used to planarize the inter-layer dielectric.
摘要翻译：平面化层间电介质层的方法包括使用高密度等离子体化学气相沉积方法沉积未掺杂的电介质，这在随后的化学机械抛光操作中提高了抛光效率，并且不需要高温致密化处理用于平坦化。使用化学机械抛光操作来平坦化层间电介质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式