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    • 3. 发明授权
    • System and method of adjusting a resistance-based memory circuit parameter
    • 调整基于电阻的存储器电路参数的系统和方法
    • US08423329B2
    • 2013-04-16
    • US12691415
    • 2010-01-21
    • Seong-Ook JungJisu KimJee-Hwan SongSeung H. Kang
    • Seong-Ook JungJisu KimJee-Hwan SongSeung H. Kang
    • G06F17/50
    • G06F17/5036G06F2217/10G11C7/02G11C7/06G11C11/1673
    • Systems and methods of resistance-based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance-based memory circuit includes determining a range of sizes for a clamp transistor and selecting a set of clamp transistors having sizes within the determined range of sizes. For each clamp transistor in the set of clamp transistors, a simulation may be executed to generate a first contour graph representing current values over a range of statistical values. The first contour graph may be used to identify a read disturbance area and a design range of the gate voltage of the clamp transistor and a load of the clamp transistor. The method may execute a simulation to generate a second contour graph representing sense margin over a range of statistical values of the gate voltage of the clamp transistor and the load of the clamp transistor. A sense margin may be selected based on the second contour graph that also satisfies the design range of the first contour graph. A sense margin may be determined for a selected clamp transistor in the set of transistors and the corresponding gate voltage and the load of the selected clamp transistor is determined based on the determined sense margin.
    • 公开了基于电阻的存储器电路参数调整的系统和方法。 在特定实施例中,确定基于电阻的存储器电路的一组参数的方法包括确定钳位晶体管的尺寸范围,并选择尺寸在所确定的尺寸范围内的一组钳位晶体管。 对于钳位晶体管组中的每个钳位晶体管,可以执行仿真以生成表示一定范围的统计值的当前值的第一轮廓图。 第一轮廓图可以用于识别钳位晶体管的栅极电压和钳位晶体管的负载的读取扰动区域和设计范围。 该方法可以执行仿真以产生表示钳位晶体管的栅极电压和钳位晶体管的负载的统计值范围内的检测余量的第二轮廓图。 可以基于也满足第一轮廓图的设计范围的第二轮廓图来选择感测余量。 可以针对晶体管组中的选定的钳位晶体管确定感测余量,并且基于所确定的感测余量来确定相应的栅极电压,并且选择的钳位晶体管的负载被确定。