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1. 发明申请

US20060180571A1 Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program 有权
标题翻译：等离子体蚀刻方法和装置，用于执行蚀刻方法的控制程序和存储控制程序的存储介质
公开(公告)号：US20060180571A1
公开(公告)日：2006-08-17
申请号：US11354042
申请日：2006-02-15
申请人： Jin Fujihara , Katsumi Horiguchi
发明人： Jin Fujihara , Katsumi Horiguchi
IPC分类号： C23F1/00 , H01L21/302 , H01L21/306 , B44C1/22 , C03C25/68
CPC分类号： H01L21/3083 , H01L21/3065 , H01L21/31116 , H01L21/67069
摘要： A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface of the mask is enlarged compared to opening dimensions of the top and the bottom surface of the mask and etching the silicon layer by using a halogen containing gas. A gaseous mixture containing HBr gas, NF3 gas and O2 gas is used as the halogen containing gas. A hole or a trench having an opening diameter or an opening width equal to or smaller than 0.2 μm is formed in the etching target layer. Further, a hole or a trench having an aspect ratio equal to or greater than forty is formed in the etching target layer.
摘要翻译：用于通过氧化硅膜的掩模蚀刻硅层的蚀刻目标层的等离子体蚀刻方法包括在氧化硅膜中形成开口的以下顺序步骤，其中顶部和底部之间的部分的开口尺寸掩模的表面与掩模的顶表面和底表面的开口尺寸相比被扩大，并且通过使用含卤素气体来蚀刻硅层。使用含有HBr气体，NF 3气体和O 2气体的气体混合物作为含卤素气体。在蚀刻目标层中形成具有等于或小于0.2μm的开口直径或开口宽度的孔或沟槽。此外，在蚀刻目标层中形成具有等于或大于40的纵横比的孔或沟槽。

2. 发明授权

US08741065B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08741065B2
公开(公告)日：2014-06-03
申请号：US13172366
申请日：2011-06-29
申请人： Masaya Odagiri , Yusuke Muraki , Jin Fujihara
发明人： Masaya Odagiri , Yusuke Muraki , Jin Fujihara
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , C23C16/50
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/463 , H01J37/20 , H01J37/32724 , H01J37/32779 , H01J2237/2001 , H01J2237/201 , H01L21/68771
摘要： A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.
摘要翻译：基板处理装置包括用于在其上安装两个或更多个基板的基板台。衬底台包括衬底台单元。每个基板台单元包括用于控制每个基板的中心部分的温度的中央温度控制流路和用于控制每个基板的周边部分的温度的外围温度控制流路。中央温度控制流路和周边温度控制流路彼此独立地形成。基板台包括一个温度控制介质入口，用于将温度控制介质引入周边温度控制流路和温度控制介质出口，用于从温度控制流路通过温度控制介质排出。温度控制介质出口的数量对应于基板的数量。

3. 发明授权

US08394720B2 Plasma processing method and resist pattern modifying method 有权
标题翻译：等离子体处理方法和抗蚀剂图案修饰方法
公开(公告)号：US08394720B2
公开(公告)日：2013-03-12
申请号：US12553611
申请日：2009-09-03
申请人： Jin Fujihara
发明人： Jin Fujihara
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/0273
摘要： A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
摘要翻译：等离子体处理方法包括改变基板的抗蚀剂图案; 并通过等离子体蚀刻修整改性的抗蚀剂图案。修改包括：在具有形成有抗蚀剂图案的表面的基板安装在下电极上的情况下，将处理气体供给单元的处理气体供给到处理室内部; 从高频电源提供高频功率以产生用于修改的处理气体的等离子体; 以及将来自直流电源的负直流电压提供给上电极。

4. 发明申请

US20100055911A1 PLASMA PROCESSING METHOD AND RESIST PATTERN MODIFYING METHOD 有权
标题翻译：等离子体处理方法和电阻图案的修改方法
公开(公告)号：US20100055911A1
公开(公告)日：2010-03-04
申请号：US12553611
申请日：2009-09-03
申请人： Jin Fujihara
发明人： Jin Fujihara
IPC分类号： H01L21/3065 , H01L21/3205
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/0273
摘要： A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
摘要翻译：等离子体处理方法包括改变基板的抗蚀剂图案; 并通过等离子体蚀刻修整改性的抗蚀剂图案。修改包括：在具有形成有抗蚀剂图案的表面的基板安装在下电极上的情况下，将处理气体供给单元的处理气体供给到处理室内部; 从高频电源提供高频功率以产生用于修改的处理气体的等离子体; 以及将来自直流电源的负直流电压提供给上电极。

5. 发明授权

US09153465B2 Substrate stage, substrate processing apparatus and substrate processing system 有权
标题翻译：基板台，基板加工装置及基板处理系统
公开(公告)号：US09153465B2
公开(公告)日：2015-10-06
申请号：US13172317
申请日：2011-06-29
申请人： Masaya Odagiri , Yusuke Muraki , Jin Fujihara
发明人： Masaya Odagiri , Yusuke Muraki , Jin Fujihara
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , C23C16/40 , C23C16/458 , C23C16/46 , H01L21/687
CPC分类号： H01L21/6719 , C23C16/401 , C23C16/4582 , C23C16/46 , H01L21/67109 , H01L21/68742 , H01L21/68771 , H01L21/68785 , Y10T156/17 , Y10T156/1702
摘要： A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other.
摘要翻译：用于在其上安装基板的基板台包括：外围台构件，可以在其上安装基板的外围基板部分，外围基板部分控制周边基板部分的温度;中心台构件，其中中心基板部分可以安装基板，中央基板部分控制中心基板部分的温度，以及支撑基座，其支撑外围台架部件和中央台部部件。在周边台架部件和中央台架部件之间形成间隙，以使周边台架部件和中央台部部件相互接触。

6. 发明申请

US20120000629A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20120000629A1
公开(公告)日：2012-01-05
申请号：US13172366
申请日：2011-06-29
申请人： Masaya ODAGIRI , Yusuke MURAKI , Jin FUJIHARA
发明人： Masaya ODAGIRI , Yusuke MURAKI , Jin FUJIHARA
IPC分类号： F28D15/00
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/463 , H01J37/20 , H01J37/32724 , H01J37/32779 , H01J2237/2001 , H01J2237/201 , H01L21/68771
摘要： A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.
摘要翻译：基板处理装置包括用于在其上安装两个或更多个基板的基板台。衬底台包括衬底台单元。每个基板台单元包括用于控制每个基板的中心部分的温度的中央温度控制流路和用于控制每个基板的周边部分的温度的外围温度控制流路。中央温度控制流路和周边温度控制流路彼此独立地形成。基板台包括一个温度控制介质入口，用于将温度控制介质引入周边温度控制流路和温度控制介质出口，用于从温度控制流路通过温度控制介质排出。温度控制介质出口的数量对应于基板的数量。

7. 发明申请

US20120000612A1 SUBSTRATE STAGE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板阶段，基板加工装置和基板加工系统
公开(公告)号：US20120000612A1
公开(公告)日：2012-01-05
申请号：US13172317
申请日：2011-06-29
申请人： Masaya ODAGIRI , Yusuke MURAKI , Jin FUJIHARA
发明人： Masaya ODAGIRI , Yusuke MURAKI , Jin FUJIHARA
IPC分类号： B32B37/06
CPC分类号： H01L21/6719 , C23C16/401 , C23C16/4582 , C23C16/46 , H01L21/67109 , H01L21/68742 , H01L21/68771 , H01L21/68785 , Y10T156/17 , Y10T156/1702
摘要： A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other.
摘要翻译：用于在其上安装基板的基板台包括：外围台构件，可以在其上安装基板的外围基板部分，外围基板部分控制周边基板部分的温度;中心台构件，其中中心基板部分可以安装基板，中央基板部分控制中心基板部分的温度，以及支撑基座，其支撑外围台架部件和中央台部部件。在周边台架部件和中央台架部件之间形成间隙，以使周边台架部件和中央台部部件相互接触。

8. 发明授权

US07416676B2 Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program 有权
标题翻译：等离子体蚀刻方法和装置，用于执行蚀刻方法的控制程序和存储控制程序的存储介质
公开(公告)号：US07416676B2
公开(公告)日：2008-08-26
申请号：US11354042
申请日：2006-02-15
申请人： Jin Fujihara , Katsumi Horiguchi
发明人： Jin Fujihara , Katsumi Horiguchi
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/3083 , H01L21/3065 , H01L21/31116 , H01L21/67069
摘要： A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface of the mask is enlarged compared to opening dimensions of the top and the bottom surface of the mask and etching the silicon layer by using a halogen containing gas. A gaseous mixture containing HBr gas, NF3 gas and O2 gas is used as the halogen containing gas. A hole or a trench having an opening diameter or an opening width equal to or smaller than 0.2 μm is formed in the etching target layer. Further, a hole or a trench having an aspect ratio equal to or greater than forty is formed in the etching target layer.
摘要翻译：用于通过氧化硅膜的掩模蚀刻硅层的蚀刻目标层的等离子体蚀刻方法包括在氧化硅膜中形成开口的以下顺序步骤，其中顶部和底部之间的部分的开口尺寸掩模的表面与掩模的顶表面和底表面的开口尺寸相比被扩大，并且通过使用含卤素气体来蚀刻硅层。使用含有HBr气体，NF 3气体和O 2气体的气体混合物作为含卤素气体。在蚀刻目标层中形成具有等于或小于0.2μm的开口直径或开口宽度的孔或沟槽。此外，在蚀刻目标层中形成具有等于或大于40的纵横比的孔或沟槽。

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