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1. 发明申请

US20120294087A1 PROGRAM METHOD OF NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件的程序方法
公开(公告)号：US20120294087A1
公开(公告)日：2012-11-22
申请号：US13238731
申请日：2011-09-21
申请人： Ji-Hyun SEO , Byong-Kook KIM , Sung-Jae CHUNG
发明人： Ji-Hyun SEO , Byong-Kook KIM , Sung-Jae CHUNG
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483
摘要： A program method of a nonvolatile memory device includes applying a program voltage to a selected word line, applying a first pass voltage to at least one word line adjacent to the selected word line, applying at least one first middle voltage lower than the first pass voltage but higher than an isolation voltage to at least one word line adjacent to the word line receiving the first pass voltage, applying the isolation voltage to a word line adjacent to the word line receiving the first middle voltage, applying at least one second middle voltage higher than the isolation voltage but lower than a second pass voltage to at least one word line adjacent to the word line receiving the isolation voltage, and applying a second pass voltage to at least one word line adjacent to the word line receiving the second middle voltage.
摘要翻译：一种非易失性存储装置的编程方法包括对所选择的字线施加编程电压，向与所选字线相邻的至少一个字线施加第一通过电压，施加低于第一通过电压的至少一个第一中间电压但是高于与接收第一通过电压的字线相邻的至少一个字线的隔离电压，将隔离电压施加到与接收第一中间电压的字线相邻的字线，施加至少一个第二中间电压比对接收到隔离电压的字线相邻的至少一个字线低的第二通过电压，但是对接收到第二中间电压的字线的至少一个字线施加第二通过电压。

2. 发明申请

US20130256634A1 ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME 有权
标题翻译：有机发光装置和有机发光显示装置，包括它们
公开(公告)号：US20130256634A1
公开(公告)日：2013-10-03
申请号：US13592277
申请日：2012-08-22
申请人： Hwan-Hee Cho , Moon-Jae Lee , Ji-Hyun Seo , Jae-Hyun Kwak , Young-Ho Park , Chang-Woong Chu , Mi-Kyung Kim , Kwan-Hee Lee
发明人： Hwan-Hee Cho , Moon-Jae Lee , Ji-Hyun Seo , Jae-Hyun Kwak , Young-Ho Park , Chang-Woong Chu , Mi-Kyung Kim , Kwan-Hee Lee
IPC分类号： H01L51/54
CPC分类号： H01L51/0067 , H01L51/0061 , H01L51/0072 , H01L51/0077 , H01L51/0085 , H01L51/5016 , H01L51/5072
摘要： An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, and an electron transport layer between the phosphorescent emission layer and the second electrode. The phosphorescent emission layer includes a compound represented by one of Formulae 1a to 1c, and the electron transport layer includes a metal-containing compound and a compound represented by Formula 2.
摘要翻译：有机发光器件包括第一电极，面对第一电极的第二电极，第一电极和第二电极之间的磷光发光层，以及磷光发光层和第二电极之间的电子传输层。磷光发光层包括由式1a至1c之一表示的化合物，电子传输层包含含金属的化合物和由式2表示的化合物。

3. 发明授权

US08520438B2 Program method of nonvolatile memory device 有权
标题翻译：非易失性存储器件的编程方法
公开(公告)号：US08520438B2
公开(公告)日：2013-08-27
申请号：US13238731
申请日：2011-09-21
申请人： Ji-Hyun Seo , Byong-Kook Kim , Sung-Jae Chung
发明人： Ji-Hyun Seo , Byong-Kook Kim , Sung-Jae Chung
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/0483
摘要： A program method of a nonvolatile memory device includes applying a program voltage to a selected word line, applying a first pass voltage to at least one word line adjacent to the selected word line, applying at least one first middle voltage lower than the first pass voltage but higher than an isolation voltage to at least one word line adjacent to the word line receiving the first pass voltage, applying the isolation voltage to a word line adjacent to the word line receiving the first middle voltage, applying at least one second middle voltage higher than the isolation voltage but lower than a second pass voltage to at least one word line adjacent to the word line receiving the isolation voltage, and applying a second pass voltage to at least one word line adjacent to the word line receiving the second middle voltage.
摘要翻译：一种非易失性存储装置的编程方法包括对所选择的字线施加编程电压，向与所选字线相邻的至少一个字线施加第一通过电压，施加低于第一通过电压的至少一个第一中间电压但是高于与接收第一通过电压的字线相邻的至少一个字线的隔离电压，将隔离电压施加到与接收第一中间电压的字线相邻的字线，施加至少一个第二中间电压比对接收到隔离电压的字线相邻的至少一个字线低的第二通过电压，但是对接收到第二中间电压的字线的至少一个字线施加第二通过电压。

4. 发明申请

US20100054044A1 METHOD OF OPERATING NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：操作非易失性存储器件的方法
公开(公告)号：US20100054044A1
公开(公告)日：2010-03-04
申请号：US12553440
申请日：2009-09-03
申请人： Ji Hyun SEO
发明人： Ji Hyun SEO
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/349 , G11C16/10 , G11C16/3454
摘要： A method of operating a nonvolatile memory device includes setting an initial cell current level, performing program and erase operations for each word line of a memory block, storing the cycling number of the program and erase operations, comparing the cycling number with a critical cycling number of the program and erase operations, lowering the initial cell current level when the cycling number are larger than the critical cycling number, and changing a program operation option based on the lowered initial cell current level
摘要翻译：一种操作非易失性存储器件的方法包括设置初始单元电流电平，对存储块的每个字线执行编程和擦除操作，存储程序循环次数和擦除操作，将循环次数与临界循环次数进行比较的编程和擦除操作，当循环数大于关键循环次数时降低初始单元电流电平，并且基于降低的初始单元电流电平来改变程序操作选项

5. 发明申请

US20090029523A1 Method of Fabricating Flash Memory Device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20090029523A1
公开(公告)日：2009-01-29
申请号：US12179448
申请日：2008-07-24
申请人： Ji Hyun Seo , Seok Pyo Song , Dong Sun Sheen
发明人： Ji Hyun Seo , Seok Pyo Song , Dong Sun Sheen
IPC分类号： H01L21/762
CPC分类号： H01L21/3081 , H01L21/3086 , H01L21/31111 , H01L21/31116 , H01L21/76232 , H01L27/11521
摘要： The invention relates to a method of fabricating flash memory device. In accordance with an aspect of the invention, the method includes forming a gate insulating layer, a first conductive layer, and an isolation mask over a semiconductor substrate. The isolation mask is patterned to expose regions in which an isolation layer will be formed. The first conductive layer, the gate insulating layer, and the semiconductor substrate are etched using the patterned isolation mask to form trenches. A liner oxide layer is formed on the resulting structure including the trenches. The trenches in which the liner oxide layer is formed are filled with an insulating layer. A planarizing process and a cleaning process are carried out such that wing spacers covering the gate insulating layer are formed at top edge portions of the isolation layer, thereby forming the isolation layer.
摘要翻译：本发明涉及一种制造闪速存储器件的方法。根据本发明的一个方面，所述方法包括在半导体衬底上形成栅绝缘层，第一导电层和隔离掩模。隔离掩模被图案化以暴露其中将形成隔离层的区域。使用图案化隔离掩模蚀刻第一导电层，栅极绝缘层和半导体衬底，以形成沟槽。在包括沟槽的所得结构上形成衬里氧化物层。形成衬垫氧化物层的沟槽填充有绝缘层。执行平面化处理和清洁处理，使得覆盖栅绝缘层的翼间隔件形成在隔离层的顶部边缘部分，从而形成隔离层。

6. 发明申请

US20100075477A1 Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100075477A1
公开(公告)日：2010-03-25
申请号：US12495240
申请日：2009-06-30
申请人： Ji Hyun Seo
发明人： Ji Hyun Seo
IPC分类号： H01L21/762 , H01L21/336
CPC分类号： H01L21/76232 , H01L21/76213 , H01L27/11521
摘要： An embodiment of the disclosure relates to a method of manufacturing semiconductor devices. According to this embodiment, a tunnel insulating layer, a conductive layer for a floating gate, and a hard mask layer are sequentially formed over a semiconductor substrate. Isolation trenches are formed by etching the hard mask layer, the conductive layer for the floating gate, the tunnel insulating layer, and the semiconductor substrate. Isolation structures are formed by filling the isolation trenches with an insulating layer. Upper sidewalls of the isolation trenches are exposed by etching predetermined thickness of the isolation structures. Ion implantation regions are formed in the exposed upper sidewalls of the isolation trenches by performing an ion implantation process.
摘要翻译：本公开的实施例涉及制造半导体器件的方法。根据本实施例，在半导体衬底上依次形成隧道绝缘层，浮栅用导电层和硬掩模层。通过蚀刻硬掩模层，浮栅的导电层，隧道绝缘层和半导体衬底形成隔离沟槽。通过用绝缘层填充隔离沟槽形成隔离结构。通过蚀刻隔离结构的预定厚度来暴露隔离沟槽的上侧壁。离子注入区域通过进行离子注入工艺形成在隔离沟槽的暴露的上侧壁中。

7. 发明授权

US09466801B2 Organic light-emitting device and organic light-emitting display apparatus including the same 有权
标题翻译：有机发光装置和包括该有机发光装置的有机发光显示装置
公开(公告)号：US09466801B2
公开(公告)日：2016-10-11
申请号：US13592277
申请日：2012-08-22
申请人： Hwan-Hee Cho , Moon-Jae Lee , Ji-Hyun Seo , Jae-Hyun Kwak , Young-Ho Park , Chang-Woong Chu , Mi-Kyung Kim , Kwan-Hee Lee
发明人： Hwan-Hee Cho , Moon-Jae Lee , Ji-Hyun Seo , Jae-Hyun Kwak , Young-Ho Park , Chang-Woong Chu , Mi-Kyung Kim , Kwan-Hee Lee
IPC分类号： H01L51/50 , H01L51/00
CPC分类号： H01L51/0067 , H01L51/0061 , H01L51/0072 , H01L51/0077 , H01L51/0085 , H01L51/5016 , H01L51/5072
摘要： An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, and an electron transport layer between the phosphorescent emission layer and the second electrode. The phosphorescent emission layer includes a compound represented by one of Formulae 1a to 1c, and the electron transport layer includes a metal-containing compound and a compound represented by Formula 2.

8. 发明申请

US20080102587A1 METHOD OF MANUFACTURING HIGH VOLTAGE DEVICE 审中-公开
标题翻译：制造高压器件的方法
公开(公告)号：US20080102587A1
公开(公告)日：2008-05-01
申请号：US11617677
申请日：2006-12-28
申请人： Ji Hyun Seo , Dong Kee Lee
发明人： Ji Hyun Seo , Dong Kee Lee
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L21/26513 , H01L21/76814 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a high voltage device includes forming a junction region in a semiconductor substrate. An insulating layer is formed over the semiconductor substrate. A portion of the insulating layer is etched so that the junction region is exposed. Arsenic is implanted into the exposed junction region to form plug ion implantation regions. A plug is formed on the plug ion implantation regions into which arsenic has been implanted.
摘要翻译：制造高压器件的方法包括在半导体衬底中形成结区域。在半导体衬底上形成绝缘层。蚀刻绝缘层的一部分，使得接合区域露出。将砷植入暴露的结区域以形成插塞离子注入区域。在已经植入有砷的插塞离子注入区域上形成插塞。

9. 发明申请

US20130207082A1 ORGANIC LIGHT-EMITTING DEVICE HAVING IMPROVED EFFICIENCY CHARACTERISTICS AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：具有改进效率特性的有机发光装置和包括其的有机发光显示装置
公开(公告)号：US20130207082A1
公开(公告)日：2013-08-15
申请号：US13600037
申请日：2012-08-30
申请人： Hwan-Hee CHO , Kwan-Hee LEE , Chang-Woong CHU , Moon-Jae LEE , Jae-Hyun KWAK , Young-Ho PARK , Ji-Hyun SEO
发明人： Hwan-Hee CHO , Kwan-Hee LEE , Chang-Woong CHU , Moon-Jae LEE , Jae-Hyun KWAK , Young-Ho PARK , Ji-Hyun SEO
IPC分类号： H01L51/54
CPC分类号： H01L51/5016 , H01L51/0058 , H01L51/0059 , H01L51/0061 , H01L51/0067 , H01L51/0072 , H01L51/0073 , H01L51/0085 , H01L51/50 , H01L51/5004 , H01L51/5072 , H01L51/5076 , H01L51/5096 , H01L2251/5384 , H01L2251/552
摘要： An organic light-emitting device including a first electrode, a second electrode opposite to the first electrode, a phosphorescent layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the phosphorescent emission layer and the second electrode, and an electron control layer disposed between the phosphorescent emission layer and the electron transport layer. An organic light-emitting display apparatus including the OLED.
摘要翻译：一种有机发光装置，包括第一电极，与第一电极相对的第二电极，设置在第一电极和第二电极之间的磷光层，设置在磷光发光层和第二电极之间的电子传输层，以及电子控制层设置在磷光发光层和电子传输层之间。一种包括OLED的有机发光显示装置。

10. 发明申请

US20110111092A1 BACILLUS SUBTILIS HA PRODUCING FIBRINOLYTIC ENZYME AND MUCILAGE HIGHLY, METHOD OF PREPARING FERMENTED SOYBEANS USING THE SAME STRAIN, AND SOYBEANS PREPARED BY THE METHOD 审中-公开
标题翻译：生产纤维蛋白酶和高效制备芽孢杆菌的芽孢杆菌，使用相同菌株制备发芽大豆的方法，以及由该方法制备的大豆
公开(公告)号：US20110111092A1
公开(公告)日：2011-05-12
申请号：US12515654
申请日：2007-02-27
申请人： Sam Pin Lee , Ji-Hyun Seo , In Seon Lee
发明人： Sam Pin Lee , Ji-Hyun Seo , In Seon Lee
IPC分类号： A23L1/20 , C12N1/20
CPC分类号： C12R1/125 , A23L11/09 , A23L11/33
摘要： The present invention provides Bacillus subtilis HA KCCM-10775P having a high productivity of protease, fibrinolytic enzyme and mucilage, a method preparing fermented soybeans (e.g., Cheonggukjang) using the same strain, in which bean fragments, soybeans and black soybeans are fermented, and fermented soybeans (e.g., Cheonggukjang) produced according to the said method. The Bacillus subtilis HA KCCM-10775P isolated from traditional fermented soybeans (e.g., Cheonggukjang) and identified is the superior strain having a high productivity of protease, fibrinolytic enzyme and mucilage. When preparing fermented soybeans (e.g., Cheonggukjang) using the strain of the present invention, it has good sensory properties by removing a peculiar smell thereof, as well as a high productivity of fibrinolytic enzyme and mucilage.
摘要翻译：本发明提供了具有高蛋白酶，纤维蛋白溶解酶和粘液生产力的枯草芽孢杆菌HAKCCM-10775P，使用相同菌株制备发酵大豆（例如Cheonggukjang）的方法，其中豆芽碎片，大豆和黑大豆被发酵，以及按照上述方法生产的发酵大豆（例如Cheonggukjang）。从传统发酵大豆（例如Cheonggukjang）分离的枯草芽孢杆菌HA KCCM-10775P，鉴定出具有高蛋白酶，纤维蛋白溶解酶和粘液生产力的优良菌株。当使用本发明的菌株制备发酵大豆（例如Cheonggukjang）时，通过除去其特有的气味以及纤维蛋白溶解酶和粘液的高生产率具有良好的感官特性。

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