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1. 发明授权

US5891256A Ultra-low particle semiconductor cleaner 失效
标题翻译：超低颗粒半导体清洁剂
公开(公告)号：US5891256A
公开(公告)日：1999-04-06
申请号：US861456
申请日：1997-12-29
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B7/04 , B08B3/10 , G11B23/50 , H01L21/00 , H01L21/027 , H01L21/304 , H01L21/306 , B08B3/04 , B08B5/00
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049 , Y10S134/902
摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid including water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas including a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
摘要翻译：一种用于清洁半导体晶片的方法。该方法包括将晶片浸入包括水的液体中。晶片具有前表面，后表面和边缘。该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。还包括在提供步骤中引入包括清洁增强物质的载气的步骤。清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

2. 发明授权

US5878760A Ultra-low particle semiconductor cleaner 失效
公开(公告)号：US5878760A
公开(公告)日：1999-03-09
申请号：US862083
申请日：1997-05-22
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B7/04 , B08B3/10 , G11B23/50 , H01L21/00 , H01L21/027 , H01L21/304 , H01L21/306 , B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049 , Y10S134/902
摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

3. 发明申请

US20050066610A1 Screen with integral railing 失效
标题翻译：屏幕整体栏杆
公开(公告)号：US20050066610A1
公开(公告)日：2005-03-31
申请号：US10675442
申请日：2003-09-30
申请人： Jeffrey Nowell , Jerry DeLiberato , Tony Bouquot
发明人： Jeffrey Nowell , Jerry DeLiberato , Tony Bouquot
IPC分类号： A01M29/34 , E04B1/00 , E06B9/52 , E04C3/02
CPC分类号： A01M29/34 , E04B1/0046 , E06B9/52
摘要： A frame assembly for at least partially enclosing a raised floor structure includes a bottom frame member positioned adjacent an associated raised floor structure. A pair of spaced apart side frame members are connected to and extend upwardly from the bottom frame member. A top frame member is spaced from the bottom frame member and connected to the pair of side frame members. At least one picket extends between and is connected to the top and bottom frame members. The at least one picket is oriented approximately parallel to the side frame members. A screen is selectively mounted to at least one of the top and bottom frame members and the side frame members. The screen is located adjacent the at least one picket.
摘要翻译：用于至少部分地包围高架地板结构的框架组件包括邻近相关联的高架地板结构定位的底部框架构件。一对间隔开的侧框架构件从底框架构件连接并向上延伸。顶部框架构件与底部框架构件间隔开并连接到一对侧框架构件。至少一个拾音器在顶部和底部框架构件之间延伸并连接到顶部和底部框架构件。所述至少一个拾音器大致平行于所述侧框架构件定向。屏幕被选择性地安装到顶部和底部框架构件和侧部框架构件中的至少一个上。该屏幕位于至少一个纠察桩附近。

4. 发明授权

US06352082B1 Ultra-low particle semiconductor cleaner 失效
标题翻译：超低颗粒半导体清洁剂
公开(公告)号：US06352082B1
公开(公告)日：2002-03-05
申请号：US09157765
申请日：1998-09-21
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson Sr. , Jeffrey Nowell
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/02049 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , Y10S134/902
摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
摘要翻译：一种用于清洁半导体晶片的方法（400）。该方法包括将晶片浸入（420）包含水的液体中。晶片具有前表面，后表面和边缘。该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。还包括在提供步骤（450）期间引入包含清洁增强物质的载气的步骤。清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

5. 发明授权

US6158446A Ultra-low particle semiconductor cleaner 有权
标题翻译：超低颗粒半导体清洁剂
公开(公告)号：US6158446A
公开(公告)日：2000-12-12
申请号：US148641
申请日：1998-09-04
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B3/10 , G11B23/50 , H01L21/00 , H01L21/306 , B08B9/20
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , G11B23/505 , Y10S134/902
摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
摘要翻译：一种用于清洁半导体晶片的方法。该方法包括将晶片浸入包含水的液体中。晶片具有前表面，后表面和边缘。该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。还包括在提供步骤中引入包含清洁增强物质的载气的步骤。清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，从而加速了附着液体流出晶片的流体流动。

6. 发明授权

US5634978A Ultra-low particle semiconductor method 失效
标题翻译：超低粒子半导体方法
公开(公告)号：US5634978A
公开(公告)日：1997-06-03
申请号：US339326
申请日：1994-11-14
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B3/10 , G11B23/50 , H01L21/00 , H01L21/306 , B08B3/08 , B08B11/00
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049
摘要： A method operates a system for wet processing of semiconductors. The system includes an inlet coupled to a fluid source, and a filter coupled to the inlet. The system also includes a sealed vessel coupled to the filter where the sealed vessel has a lower liquid portion and an upper vapor portion. The system further includes an outlet coupled to the sealed vessel. The outlet is attached to the lower liquid portion. A solvent injector coupled to the sealed vessel is also used. The solvent injector is coupled to the upper vapor portion, and supplies a gaseous mixture including a polar organic compound. The polar organic compound is a non-saturated polar organic vapor. The system also includes a gas source coupled to the sealed vessel. The gas source is coupled to the upper vapor portion, and supplies an inert gas into the upper vapor portion. A device for removing the liquid from the lower liquid portion at substantially a constant liquid level rate is also included.
摘要翻译：一种用于半导体湿法处理的系统。该系统包括连接到流体源的入口和耦合到入口的过滤器。该系统还包括耦合到过滤器的密封容器，其中密封容器具有下部液体部分和上部蒸气部分。该系统还包括联接到密封容器的出口。出口附接到下部液体部分。还使用耦合到密封容器的溶剂注入器。溶剂注入器联接到上部蒸气部分，并提供包含极性有机化合物的气体混合物。极性有机化合物是非饱和极性有机蒸气。该系统还包括耦合到密封容器的气体源。气源与上蒸气部分连接，并向惰性气体供应惰性气体。还包括以基本上恒定的液位速率从下部液体部分去除液体的装置。

7. 发明授权

US5932027A Cleaning and drying photoresist coated wafers 失效
标题翻译：清洁和干燥光刻胶涂覆的晶片
公开(公告)号：US5932027A
公开(公告)日：1999-08-03
申请号：US5976
申请日：1998-01-12
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B7/04 , B08B3/10 , G11B23/50 , H01L21/00 , H01L21/027 , H01L21/304 , H01L21/306 , B08B3/04 , B08B5/00
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049 , Y10S134/902
摘要： A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid having water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas having a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
摘要翻译：一种用于清洁半导体晶片的方法。该方法包括将晶片浸入具有水的液体中。晶片具有前表面，后表面和边缘。该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。还包括在提供步骤中引入具有清洁增强物质的载气的步骤。清洁增强物质涂覆附着在前表面和背面上的液体，引起附着液体中的清洁增强物质的浓度梯度，以加速从晶片脱离的附着液体的流体流动。

8. 发明授权

US5873947A Ultra-low particle disk cleaner 失效
标题翻译：超低粒子清洁剂
公开(公告)号：US5873947A
公开(公告)日：1999-02-23
申请号：US907322
申请日：1997-08-06
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B7/04 , B08B3/10 , G11B23/50 , H01L21/00 , H01L21/027 , H01L21/304 , H01L21/306 , B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049 , Y10S134/902
摘要： A technique for cleaning a hard disk using a novel support device 502. The technique includes immersing a disk in a liquid comprising water. The disk has a front face, a back face, an edge, and a center region. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the disk.
摘要翻译：使用新颖的支持装置502清洁硬盘的技术。该技术包括将盘浸入包含水的液体中。盘具有正面，背面，边缘和中心区域。该方法还包括当正在除去液体时提供与前表面和背面相邻的基本上无颗粒的环境。还包括在提供步骤中引入包含清洁增强物质的载气的步骤。清洁增强物质涂覆附着在前表面和背面上的液体，使得附着液体中的清洁增强物质的浓度梯度加速，从而加速了附着液体流出盘的流体流动。

9. 发明授权

US5685327A Ultra-low particle semiconductor apparatus 失效
标题翻译：超低粒子半导体装置
公开(公告)号：US5685327A
公开(公告)日：1997-11-11
申请号：US695285
申请日：1996-08-08
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson , Jeffrey Nowell
IPC分类号： B08B3/10 , G11B23/50 , H01L21/00 , H01L21/306 , B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/02049 , Y10S134/902
摘要： Apparatus for cleaning and drying a semiconductor wafer. The apparatus includes a vessel adapted to immerse a partially completed semiconductor wafer in a liquid comprising water. The apparatus also includes a control valve operably coupled to the vessel through a drain, and adapted to allow a gaseous mixture to displace the liquid in the vessel, where the liquid is displaced adjacent to the front face of the partially completed wafer. A controller is included. The controller is operably coupled to a plurality of nozzles. The controller can be used to pulse a drying fluid from the plurality of nozzles to the partially completed wafer to remove a possibility of liquid which may be attached to the partially completed wafer.
摘要翻译：用于清洁和干燥半导体晶片的装置。该装置包括适于将部分完成的半导体晶片浸入包含水的液体中的容器。该装置还包括控制阀，该控制阀通过排水口可操作地连接到容器，并且适于允许气体混合物移动容器中的液体，其中液体邻近部分完成的晶片的前表面移动。包括控制器。控制器可操作地耦合到多个喷嘴。控制器可以用于将干燥流体从多个喷嘴脉冲到部分完成的晶片，以消除可能附着到部分完成的晶片的液体的可能性。

10. 发明授权

US06491043B2 Ultra-low particle semiconductor cleaner 失效
公开(公告)号：US06491043B2
公开(公告)日：2002-12-10
申请号：US10014113
申请日：2001-12-11
申请人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
发明人： Raj Mohindra , Abhay Bhushan , Rajiv Bhushan , Suraj Puri , John H. Anderson, Sr. , Jeffrey Nowell
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B08B3/10 , G11B23/505 , H01L21/02049 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , Y10S134/902
摘要： A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

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