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    • 1. 发明授权
    • Thin film transistor panel and manufacturing method thereof
    • 薄膜晶体管面板及其制造方法
    • US07582501B2
    • 2009-09-01
    • US11724982
    • 2007-03-15
    • Jae-Kyeong LeeKwan-Tack Lim
    • Jae-Kyeong LeeKwan-Tack Lim
    • H01L21/00H01L31/036H01L31/112
    • H01L27/124
    • A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.
    • 提出了具有低电阻率信号线的TFT阵列面板。 TFT阵列面板包括基板; 栅线,包括形成在所述基板上并具有单层结构的栅电极; 栅极绝缘层,形成在栅极线上; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上并包含氮的阻挡层; 数据线,包括形成在所述阻挡层上并具有单层结构的源电极; 漏电极,形成在阻挡层上,与源电极间隔开并具有单层结构; 以及电连接到漏电极的像素电极。 TFT阵列面板可以包括延伸到栅极线,数据线和漏电极的端部的接触孔,以及接触孔中的钼或钼合金缓冲构件。
    • 2. 发明授权
    • Thin film transistor substrate and display device having electrode plates on storage capacitors
    • 薄膜晶体管基板和在存储电容器上具有电极板的显示装置
    • US07968881B2
    • 2011-06-28
    • US11945067
    • 2007-11-26
    • Jae Kyeong LeeHyo Taek LimYoung Goo SongSahng Ik JunJa Hee Woo
    • Jae Kyeong LeeHyo Taek LimYoung Goo SongSahng Ik JunJa Hee Woo
    • H01L29/04H01L29/10H01L21/00G02F1/1343
    • G02F1/13624G02F1/136204G02F1/136286
    • The invention relates to a thin film transistor substrate and a display device including the same, and provides a thin film transistor substrate and a display device including the same, which can prevent damage of elements due to static electricity by forming, in each unit pixel region where a pair of first and second pixel electrodes, a pair of first and second drain electrode plates that are connected to the first and second pixel electrodes and to connected to drain terminals of thin film transistors, and can obtain a dot inversion driving effect through line inversion driving by connecting the first drain electrode in one pixel region to the first drain electrode plate, connecting the second drain electrode in the one unit pixel region to the second drain electrode plate, connecting a first drain electrode in another unit pixel region neighboring the one unit pixel region to the second drain electrode plate, and connecting a second drain electrode in another unit pixel region to the first drain electrode plate.
    • 本发明涉及一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置,并且提供一种薄膜晶体管基板及包括该薄膜晶体管基板的显示装置,其能够通过在每个单位像素区域中形成来防止由静电引起的元件的损坏 其中一对第一和第二像素电极,一对第一和第二漏极电极板,其连接到第一和第二像素电极并连接到薄膜晶体管的漏极端子,并且可以通过线路获得点反转驱动效应 通过将一个像素区域中的第一漏电极连接到第一漏电极板,将一个单位像素区域中的第二漏电极连接到第二漏极电极板,将第一漏电极连接在与该一个像素区域相邻的另一单位像素区域中的第一漏电极 单元像素区域连接到第二漏电极板,并且将另一单位像素区域中的第二漏电极连接到第二漏电极板 e第一个漏电极板。
    • 3. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE THEREFOR
    • 薄膜晶体管基板及其显示装置
    • US20080210940A1
    • 2008-09-04
    • US11945067
    • 2007-11-26
    • Jae Kyeong LeeHyo Taek LimYoung Goo SongSahng Ik JunJa Hee Woo
    • Jae Kyeong LeeHyo Taek LimYoung Goo SongSahng Ik JunJa Hee Woo
    • H01L27/12H01L21/84
    • G02F1/13624G02F1/136204G02F1/136286
    • The invention relates to a thin film transistor substrate and a display device including the same, and provides a thin film transistor substrate and a display device including the same, which can prevent damage of elements due to static electricity by forming, in each unit pixel region where a pair of first and second pixel electrodes, a pair of first and second drain electrode plates that are connected to the first and second pixel electrodes and to connected to drain terminals of thin film transistors, and can obtain a dot inversion driving effect through line inversion driving by connecting the first drain electrode in one pixel region to the first drain electrode plate, connecting the second drain electrode in the one unit pixel region to the second drain electrode plate, connecting a first drain electrode in another unit pixel region neighboring the one unit pixel region to the second drain electrode plate, and connecting a second drain electrode in another unit pixel region to the first drain electrode plate.
    • 本发明涉及一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置,并且提供一种薄膜晶体管基板及包括该薄膜晶体管基板的显示装置,其能够通过在每个单位像素区域中形成来防止由静电引起的元件的损坏 其中一对第一和第二像素电极,一对第一和第二漏极电极板,其连接到第一和第二像素电极并连接到薄膜晶体管的漏极端子,并且可以通过线路获得点反转驱动效应 通过将一个像素区域中的第一漏电极连接到第一漏电极板,将一个单位像素区域中的第二漏电极连接到第二漏极电极板,将第一漏电极连接在与该一个像素区域相邻的另一单位像素区域中的第一漏电极 单元像素区域连接到第二漏电极板,并且将另一单位像素区域中的第二漏电极连接到第二漏电极板 e第一个漏电极板。
    • 5. 发明申请
    • Thin film transistor panel and manufacturing method thereof
    • 薄膜晶体管面板及其制造方法
    • US20070215876A1
    • 2007-09-20
    • US11724982
    • 2007-03-15
    • Jae-Kyeong LeeKwan-Tack Lim
    • Jae-Kyeong LeeKwan-Tack Lim
    • H01L29/04
    • H01L27/124
    • A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.
    • 提出了具有低电阻率信号线的TFT阵列面板。 TFT阵列面板包括基板; 栅线,包括形成在所述基板上并具有单层结构的栅电极; 栅极绝缘层,形成在栅极线上; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上并包含氮的阻挡层; 数据线,包括形成在所述阻挡层上并具有单层结构的源电极; 漏电极,形成在阻挡层上,与源电极间隔开并具有单层结构; 以及电连接到漏电极的像素电极。 TFT阵列面板可以包括延伸到栅极线,数据线和漏电极的端部的接触孔,以及接触孔中的钼或钼合金缓冲构件。