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    • 1. 发明申请
    • STORAGE DEVICE AND OPERATING METHOD THEREOF
    • 存储器件及其操作方法
    • US20160124809A1
    • 2016-05-05
    • US14925077
    • 2015-10-28
    • Ju Seok LEE
    • Ju Seok LEE
    • G06F11/10G11C29/52
    • G11C29/52G06F11/108G11C16/3418G11C29/42G11C2029/0411
    • An operating method of a storage device includes simultaneously buffering first data in a first nonvolatile memory device and a second nonvolatile memory device, simultaneously buffering second data in the second nonvolatile memory device and a third nonvolatile memory device, performing a parity operation on the first data and the second data in the second nonvolatile memory device to generate a parity, and programming the first data, the second data, and the parity into the first nonvolatile memory device, the third nonvolatile memory device, and the second nonvolatile memory device, respectively.
    • 存储装置的操作方法包括同时缓冲第一非易失性存储器件和第二非易失性存储器件中的第一数据,同时缓冲第二非易失性存储器件中的第二数据和第三非易失性存储器件,对第一数据执行奇偶校验操作 以及第二非易失性存储器件中的第二数据以产生奇偶校验,并将第一数据,第二数据和奇偶校验分别编程到第一非易失性存储器件,第三非易失性存储器件和第二非易失性存储器件中。
    • 3. 发明授权
    • Nonvolatile memory device, memory system, and read method thereof
    • 非易失存储器件,存储器系统及其读取方法
    • US08665647B2
    • 2014-03-04
    • US13302573
    • 2011-11-22
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • G11C11/34
    • G11C11/5642G11C16/0483G11C16/26G11C16/3418
    • A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
    • 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作,基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此,在选择的存储单元被读取之前,选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时,根据相邻存储单元的编程状态,根据相邻存储单元的编程状态,读取电压变化,执行所选存储单元的一个或多个读操作 。
    • 5. 发明申请
    • NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND READ METHOD THEREOF
    • 非易失性存储器件,存储器系统及其读取方法
    • US20120134208A1
    • 2012-05-31
    • US13302573
    • 2011-11-22
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • G11C16/26
    • G11C11/5642G11C16/0483G11C16/26G11C16/3418
    • A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
    • 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作,基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此,在选择的存储单元被读取之前,选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时,根据相邻存储单元的编程状态,根据相邻存储单元的编程状态,读取电压变化,执行所选存储单元的一个或多个读操作 。