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    • 10. 发明授权
    • MOS transistor with laser-patterned metal gate, and method for making the same
    • 具有激光图案化金属栅极的MOS晶体管及其制造方法
    • US08461628B2
    • 2013-06-11
    • US11203563
    • 2005-08-11
    • Criswell ChoiJoerg RockenbergerJ. Devin MacKenzieChristopher Gudeman
    • Criswell ChoiJoerg RockenbergerJ. Devin MacKenzieChristopher Gudeman
    • H01L29/66H01L21/336H01L21/8234H01L29/772
    • H01L21/32131H01L21/28123H01L21/84H01L27/1292H01L29/66757
    • A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.
    • 具有激光图案化金属栅极的MOS晶体管及其制造方法。 该方法通常包括在电介质膜上形成含金属材料层,其中电介质膜位于包含无机半导体的电功能基底上; 激光从含金属材料层图案化金属栅极; 以及在与金属栅极相邻的位置的无机半导体中形成源极和漏极端子。 晶体管通常包括电功能基板; 在所述电功能基板的至少一部分上的介电膜; 电介质膜上的激光图案化金属栅极; 源极和漏极端子包括与金属栅极相邻的掺杂的无机半导体层。 本发明有利地通过消除一个或多个常规光刻步骤来快速,有效地和/或以低成本提供具有可靠电特性的MOS薄膜晶体管。