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1. 发明申请

US20140205837A1 SINGLE-CRYSTAL INGOT, APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：单晶，其制造方法及其制造方法
公开(公告)号：US20140205837A1
公开(公告)日：2014-07-24
申请号：US13914927
申请日：2013-06-11
申请人： Il Soo CHOI , Jin Woo Ahn , Hak Eui Wang , Yong Jin Kim
发明人： Il Soo CHOI , Jin Woo Ahn , Hak Eui Wang , Yong Jin Kim
IPC分类号： C30B15/22 , C30B29/06
CPC分类号： C30B15/22 , C30B15/14 , C30B29/06 , Y10T117/1068 , Y10T428/2976
摘要： Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.
摘要翻译：公开了一种单晶锭制造装置，其包括容纳熔体的坩埚，被配置为加热坩埚的加热器，被构造成用于遮蔽来自加热器和熔体的辐射热的隔热构件，以及颈罩构造为了将坩埚上方的晶种单元引入隔热构件的开口内，辐射热不会在开口中被屏蔽，颈盖垂直移动，使晶种单元垂直移动到预定的范围。

2. 发明授权

US08698311B2 Package substrate and semiconductor package including the same 有权
标题翻译：封装衬底和包括其的半导体封装
公开(公告)号：US08698311B2
公开(公告)日：2014-04-15
申请号：US13599838
申请日：2012-08-30
申请人： Tae-Gyu Kang , Ho-Tae Jin , Tae-ho Moon , Il-soo Choi , Jong-Eun Lee
发明人： Tae-Gyu Kang , Ho-Tae Jin , Tae-ho Moon , Il-soo Choi , Jong-Eun Lee
IPC分类号： H01L23/48
CPC分类号： H01L24/14 , H01L23/49816 , H01L23/49838 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/1403 , H01L2224/141 , H01L2224/14515 , H01L2224/16237 , H01L2224/17104 , H01L2224/17517 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have an upper surface protruded from an upper surface of the dummy pad. The plug may be vertically formed in the insulating substrate. The plug may have an upper end exposed through the upper surface of the insulating substrate and connected with the signal pad and the dummy pad, and a lower end exposed through a lower surface of the insulating substrate. Thus, a signal bump may accurately make contact with the protruded upper surface of the signal pad.
摘要翻译：封装基板可以包括绝缘基板，虚拟焊盘，信号焊盘和插头。虚拟焊盘可以形成在绝缘基板的上表面上。信号焊盘可以形成在绝缘基板的上表面上。信号垫可以具有从虚拟垫的上表面突出的上表面。插塞可以垂直地形成在绝缘基板中。插头可以具有通过绝缘基板的上表面暴露的上端，并且与信号焊盘和虚拟焊盘相连，并且通过绝缘基板的下表面露出的下端。因此，信号凸块可以准确地与信号垫的突出的上表面接触。

3. 发明申请

US20130069229A1 PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 有权
标题翻译：封装衬底和半导体封装，包括它们
公开(公告)号：US20130069229A1
公开(公告)日：2013-03-21
申请号：US13599838
申请日：2012-08-30
申请人： Tae-Gyu KANG , Ho-Tae JIN , Tae-ho MOON , Il-soo CHOI , Jong-Eun LEE
发明人： Tae-Gyu KANG , Ho-Tae JIN , Tae-ho MOON , Il-soo CHOI , Jong-Eun LEE
IPC分类号： H01L23/485 , H01L23/48
CPC分类号： H01L24/14 , H01L23/49816 , H01L23/49838 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/1403 , H01L2224/141 , H01L2224/14515 , H01L2224/16237 , H01L2224/17104 , H01L2224/17517 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have an upper surface protruded from an upper surface of the dummy pad. The plug may be vertically formed in the insulating substrate. The plug may have an upper end exposed through the upper surface of the insulating substrate and connected with the signal pad and the dummy pad, and a lower end exposed through a lower surface of the insulating substrate. Thus, a signal bump may accurately make contact with the protruded upper surface of the signal pad.
摘要翻译：封装基板可以包括绝缘基板，虚拟焊盘，信号焊盘和插头。虚拟焊盘可以形成在绝缘基板的上表面上。信号焊盘可以形成在绝缘基板的上表面上。信号垫可以具有从虚拟垫的上表面突出的上表面。插塞可以垂直地形成在绝缘基板中。插头可以具有通过绝缘基板的上表面暴露的上端，并且与信号焊盘和虚拟焊盘相连，并且通过绝缘基板的下表面露出的下端。因此，信号凸块可以准确地与信号垫的突出的上表面接触。

4. 发明申请

US20140190397A1 INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT 有权
标题翻译： INGOT生长装置和制造方法
公开(公告)号：US20140190397A1
公开(公告)日：2014-07-10
申请号：US13821004
申请日：2012-08-10
申请人： Jin-Woo Ahn , Bong-Woo Kim , Il-Soo Choi , Do-Yeon Kim
发明人： Jin-Woo Ahn , Bong-Woo Kim , Il-Soo Choi , Do-Yeon Kim
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , C30B15/32 , C30B29/06 , Y10T117/1032
摘要： Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
摘要翻译：提供一种锭生长装置，其包括含有硅熔体的坩埚，拉拔从硅熔体生长的硅单晶锭的牵引装置和与拉动装置相邻设置的掺杂剂供给部，并且在生长期间供给掺杂剂锭。可以通过掺杂剂供给单元将颈部的掺杂浓度高于锭的浓度。因此，可以降低位错传播速度，并且可以缩短传播长度。

5. 发明申请

US20110079175A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20110079175A1
公开(公告)日：2011-04-07
申请号：US12899517
申请日：2010-10-06
申请人： Il-Soo Choi , Ji-Hun Moon , Bong-Woo Kim , Do-Yeon Kim
发明人： Il-Soo Choi , Ji-Hun Moon , Bong-Woo Kim , Do-Yeon Kim
IPC分类号： C30B15/10 , C03B19/09
CPC分类号： C03B19/09 , C03B2201/24 , C30B15/10 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein nitrogen is added in the silica of the outer layer.
摘要翻译：提供石英坩埚和制造石英坩埚的方法。石英坩埚用于单晶生长装置。石英坩埚包括内层，包括二氧化硅，外层包括设置在内层外侧的二氧化硅，以包围内层，其中氮在外层的二氧化硅中加入。

6. 发明申请

US20120266809A1 INSULATION DEVICE OF SINGLE CRYSTAL GROWTH DEVICE AND SINGLE CRYSTAL GROWTH DEVICE INCLUDING THE SAME 审中-公开
标题翻译：单晶生长装置的绝缘装置和包括其的单晶生长装置
公开(公告)号：US20120266809A1
公开(公告)日：2012-10-25
申请号：US13542590
申请日：2012-07-05
申请人： Sang-Hoon Lee , Hyun-Jung Oh , Il-Soo Choi
发明人： Sang-Hoon Lee , Hyun-Jung Oh , Il-Soo Choi
IPC分类号： C30B15/00
CPC分类号： C30B35/00 , C30B11/003 , C30B15/14 , Y10T117/1068
摘要： Provides are an insulation device of a single crystal growth device and a single crystal growth device including the same. The insulation device is installed inside a chamber of the single crystal growth device and the insulation device includes a plurality of insulation blocks that are spaced by a first distance.
摘要翻译：提供单晶生长装置的绝缘装置和包括其的单晶生长装置。绝缘装置安装在单晶生长装置的室内，并且绝缘装置包括间隔第一距离的多个绝缘块。

7. 发明申请

US20090090295A1 METHOD FOR GROWING SILICON INGOT 审中-公开
标题翻译：生长硅胶的方法
公开(公告)号：US20090090295A1
公开(公告)日：2009-04-09
申请号：US12206373
申请日：2008-09-08
申请人： Jung-Ha HWANG , Il-Soo CHOI , Sang-Hee KIM
发明人： Jung-Ha HWANG , Il-Soo CHOI , Sang-Hee KIM
IPC分类号： C30B19/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04
摘要： Provided is a method for growing a silicon ingot. According to an exemplary method, the method includes charging silicon in a quartz crucible, melting the silicon by heating the quartz crucible and applying a magnetic field of 500 Gauss or higher in the quartz crucible, and growing a single crystalline silicon ingot from the melted silicon while applying a magnetic field lower than 500 Gauss in the quartz crucible. As a result, by appropriately controlling the internal pressure of the quartz crucible or the application time and the magnitude of the magnetic field, it is possible to easily accelerate crystallization of the internal surface of the quartz crucible to thereby prevent flaking of the crystals. Consequently, it is possible to grow the silicon ingot of good properties.
摘要翻译：提供了生长硅锭的方法。根据示例性方法，该方法包括将硅加入石英坩埚中，通过加热石英坩埚并在石英坩埚中施加500高斯或更高的磁场来熔化硅，并从熔融硅生长单晶硅锭同时在石英坩埚中施加低于500高斯的磁场。结果，通过适当地控制石英坩埚的内部压力或施加时间和磁场的大小，可以容易地加速石英坩埚的内表面的结晶，从而防止晶体的剥离。因此，可以生长性能良好的硅锭。

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