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    • 3. 发明授权
    • Semiconductor memory device including double spacers on sidewall of flating gate, electronic device including the same
    • 半导体存储器件包括在隔离栅侧壁上的双重间隔物,包括该隔离栅的电子器件
    • US07671400B2
    • 2010-03-02
    • US12133587
    • 2008-06-05
    • Joon-Sung LimJong-Ho ParkHyun-Chul BackSung-Hun Lee
    • Joon-Sung LimJong-Ho ParkHyun-Chul BackSung-Hun Lee
    • H01L29/788
    • H01L27/11521H01L27/115H01L27/11524
    • A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.
    • 半导体存储器件包括形成在半导体衬底中以限定多个有源区的器件隔离层。 浮动门设置在活动区域​​上。 控制栅极线与浮动栅极的顶表面重叠,并在有源区域上交叉。 控制栅极线具有设置在相邻浮动栅极之间的间隙中的延伸部分和相邻浮动栅极的重叠侧壁之间。 第一间隔件设置在相邻浮动门的侧壁上。 每个第一间隔件沿着有源区的侧壁并且沿着器件隔离层的侧壁延伸。 第二间隔件设置在第一间隔件的外侧壁和延伸部分之间,并且设置在装置隔离层的上方。 还公开了一种包括半导体存储器件和制造半导体存储器件的方法的电子器件。
    • 5. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE INCLUDING DOUBLE SPACERS ON SIDEWALL OF FLATING GATE, ELECTRONIC DEVICE INCLUDING THE SAME
    • 半导体存储器件,其中包括在平板门,包括它们的电子器件上的双重间隔
    • US20090096005A1
    • 2009-04-16
    • US12133587
    • 2008-06-05
    • Joon-Sung LIMJong-Ho PARKHyun-Chul BACKSung-Hun LEE
    • Joon-Sung LIMJong-Ho PARKHyun-Chul BACKSung-Hun LEE
    • H01L27/088
    • H01L27/11521H01L27/115H01L27/11524
    • A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.
    • 半导体存储器件包括形成在半导体衬底中以限定多个有源区的器件隔离层。 浮动门设置在活动区域​​上。 控制栅极线与浮动栅极的顶表面重叠,并在有源区域上交叉。 控制栅极线具有设置在相邻浮动栅极之间的间隙中的延伸部分和相邻浮动栅极的重叠侧壁之间。 第一间隔件设置在相邻浮动门的侧壁上。 每个第一间隔件沿着有源区的侧壁并且沿着器件隔离层的侧壁延伸。 第二间隔件设置在第一间隔件的外侧壁和延伸部分之间,并且设置在装置隔离层的上方。 还公开了一种包括半导体存储器件和制造半导体存储器件的方法的电子器件。