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    • 1. 发明授权
    • Method of fabricating semiconductor integrated circuit device
    • 制造半导体集成电路器件的方法
    • US08518723B2
    • 2013-08-27
    • US12591534
    • 2009-11-23
    • Chong-Kwang ChangHong-Jae ShinNae-In LeeKwang-Hyeon BaikSeung-Il BokHyo-Jeong Kim
    • Chong-Kwang ChangHong-Jae ShinNae-In LeeKwang-Hyeon BaikSeung-Il BokHyo-Jeong Kim
    • H01L21/302
    • H01L21/0337
    • A method of fabricating a semiconductor integrated circuit device, including providing a semiconductor substrate, sequentially forming an etching target layer and a hard mask layer on the semiconductor substrate, forming first etch masks on the hard mask layer, the first etch masks including a plurality of first line patterns spaced apart from one another at a first pitch and extending in a first direction, forming first hard mask patterns by etching the hard mask layer using the first etch masks, forming second etch masks on the first hard mask patterns, the second etch masks including a plurality of second line patterns spaced apart from one another at a second pitch and extending in a second direction different from the first direction, forming second hard mask patterns by etching the first hard mask patterns using the second etch masks, forming spacers on sidewalls of the second hard mask patterns, and patterning the etching target layer using the second hard mask patterns having the spacers.
    • 一种制造半导体集成电路器件的方法,包括提供半导体衬底,在半导体衬底上依次形成蚀刻目标层和硬掩模层,在硬掩模层上形成第一蚀刻掩模,第一蚀刻掩模包括多个 第一线图案以第一间距彼此间隔开并且沿第一方向延伸,通过使用第一蚀刻掩模蚀刻硬掩模层来形成第一硬掩模图案,在第一硬掩模图案上形成第二蚀刻掩模,第二蚀刻 掩模,包括以第二间距彼此间隔开并且沿与第一方向不同的第二方向延伸的多个第二线图案,通过使用第二蚀刻掩模蚀刻第一硬掩模图案形成第二硬掩模图案,在第 第二硬掩模图案的侧壁,以及使用具有t的第二硬掩模图案来图案化蚀刻目标层 他的间隔。
    • 4. 发明申请
    • MASCARA
    • 马卡拉
    • US20140096787A1
    • 2014-04-10
    • US14124241
    • 2011-10-19
    • Hyo Jeong Kim
    • Hyo Jeong Kim
    • A45D34/04
    • A45D34/045A45D40/261A45D40/265A46B5/0091A46B2200/1053
    • The present invention relates to a mascara having a rotatable contact brush. According to the present design, comprised are: a container main body in which a mascara liquid is stored; a handle which is coupled to an opening side of the container main body so as to be sealable; and a coating member, which is extendedly formed on one side of the handle, is inserted into the container main body when the container main body and the handle are coupled, and which is provided with a brush that is rotatably provided at an end portion of a brush rod for selectively performing one effect from volumizing, curling, lengthening, and cleaning, while rotating when coating the eyelashes with the mascara liquid, thereby enhancing volume, curling, lengthening, and cleaning by means of the rotation of the brush when coating the eyelashes with the mascara liquid.
    • 本发明涉及具有可旋转接触刷的睫毛膏。 根据本设计,包括:储存睫毛液的容器主体; 手柄,其联接到容器主体的开口侧以便可密封; 并且当容器主体和手柄联接时,延伸地形成在手柄的一侧上的涂覆部件被插入到容器主体中,并且设置有可旋转地设置在容器主体的端部 用于在用睫毛液涂覆睫毛的同时旋转时选择性地进行一次效果的刷棒,从而通过刷涂时的刷子的旋转来增加体积,卷曲,延长和清洁 睫毛与睫毛膏液体。
    • 10. 发明申请
    • Method of fabricating semiconductor integrated circuit device
    • 制造半导体集成电路器件的方法
    • US20100136790A1
    • 2010-06-03
    • US12591534
    • 2009-11-23
    • Chong-Kwang ChangHong-Jae ShinNae-In LeeKwang-Hyeon BaikSeung-Il BokHyo-Jeong Kim
    • Chong-Kwang ChangHong-Jae ShinNae-In LeeKwang-Hyeon BaikSeung-Il BokHyo-Jeong Kim
    • H01L21/302
    • H01L21/0337
    • A method of fabricating a semiconductor integrated circuit device, including providing a semiconductor substrate, sequentially forming an etching target layer and a hard mask layer on the semiconductor substrate, forming first etch masks on the hard mask layer, the first etch masks including a plurality of first line patterns spaced apart from one another at a first pitch and extending in a first direction, forming first hard mask patterns by etching the hard mask layer using the first etch masks, forming second etch masks on the first hard mask patterns, the second etch masks including a plurality of second line patterns spaced apart from one another at a second pitch and extending in a second direction different from the first direction, forming second hard mask patterns by etching the first hard mask patterns using the second etch masks, forming spacers on sidewalls of the second hard mask patterns, and patterning the etching target layer using the second hard mask patterns having the spacers.
    • 一种制造半导体集成电路器件的方法,包括提供半导体衬底,在半导体衬底上依次形成蚀刻目标层和硬掩模层,在硬掩模层上形成第一蚀刻掩模,第一蚀刻掩模包括多个 第一线图案以第一间距彼此间隔开并且沿第一方向延伸,通过使用第一蚀刻掩模蚀刻硬掩模层形成第一硬掩模图案,在第一硬掩模图案上形成第二蚀刻掩模,第二蚀刻 掩模,包括以第二间距彼此间隔开并且沿与第一方向不同的第二方向延伸的多个第二线图案,通过使用第二蚀刻掩模蚀刻第一硬掩模图案形成第二硬掩模图案,在第 第二硬掩模图案的侧壁,以及使用具有t的第二硬掩模图案来图案化蚀刻目标层 他的间隔。