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1. 发明申请

US20130311709A1 METHODS AND APPARATUS FOR REALLOCATING ADDRESSABLE SPACES WITHIN MEMORY DEVICES 有权
标题翻译：用于在存储器件中重新取代可处理空间的方法和装置
公开(公告)号：US20130311709A1
公开(公告)日：2013-11-21
申请号：US13656446
申请日：2012-10-19
申请人： Jung-Been Im , Hye-Young Kim , Young-Joon Choi , Dong-Gi Lee , Shea-Yun Lee
发明人： Jung-Been Im , Hye-Young Kim , Young-Joon Choi , Dong-Gi Lee , Shea-Yun Lee
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7211
摘要： Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.
摘要翻译：集成电路系统包括非易失性存储器件（例如，快闪EEPROM器件）和存储器处理电路。存储器处理电路电耦合到非易失性存储器件。存储器处理电路被配置为重新分配非易失性存储器件内的可寻址空间。响应于由存储器处理电路接收的容量调整命令，通过增加非易失性存储器件中被保留为冗余存储器地址的物理地址的数量来执行该重新分配。

2. 发明申请

US20110101476A1 ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电子设备，存储器件及其制造方法
公开(公告)号：US20110101476A1
公开(公告)日：2011-05-05
申请号：US12700464
申请日：2010-02-04
申请人： Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
发明人： Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L27/222 , H01L43/12
摘要： Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.
摘要翻译：提供一种电子设备，存储器件和制造用于防止功能元件的物理失真的器件的产生和改善功能元件与连接到功能元件的电气元件之间的电接触性能的方法。在衬底中形成至少两个沟槽，并且在沟槽中填充导电材料以获得具有与衬底相同高度的表面的电气元件。此外，在基板的整个上表面上形成功能材料层（功能层），并对其进行图案化以获得具有与电气元件接触的两个底面的功能元件。

3. 发明申请

US20110075015A1 AUTOMATIC FOCUS IMAGING SYSTEM USING OUT-OF-PLANE TRANSLATION OF AN MEMS REFLECTIVE SURFACE 有权
标题翻译：使用MEMS反射表面的平面外翻译的自动聚焦成像系统
公开(公告)号：US20110075015A1
公开(公告)日：2011-03-31
申请号：US12569864
申请日：2009-09-29
申请人： Gyoung Il Cho , Hye Young Kim , Cheong Soo Seo
发明人： Gyoung Il Cho , Hye Young Kim , Cheong Soo Seo
IPC分类号： H04N5/232 , G03B3/10
CPC分类号： G03B3/06 , G02B7/08 , G02B26/0833 , G03B3/00 , G03B5/00 , H04N5/2254 , H04N5/23212
摘要： The present invention provides an automatic focus imaging system comprising a lens unit, an image sensor, and a Micro-Electro-Mechanical System (MEMS) unit fabricated by microfabrication technology to improve the portability and focusing speed of the automatic focus imaging system. The MEMS unit for automatic focusing comprises a substrate having a control circuitry, at least one reflective surface movably connected to the substrate, and at least one actuation unit comprising a micro-actuator having a large in-plane translation and at least one micro-converter configured to convert the large in-plane translation of the micro-actuator to the large out-of-plane translation of the reflective surface. The MEMS unit changes a distance between lens unit and the image sensor by controlling the out-plane translation of the reflective surface in order to form in-focus mage on the image sensor.
摘要翻译：本发明提供了一种自动对焦成像系统，其包括透镜单元，图像传感器和通过微细加工技术制造的微机电系统（MEMS）单元，以改善自动聚焦成像系统的便携性和聚焦速度。用于自动聚焦的MEMS单元包括具有控制电路的基板，至少一个可移动地连接到基板的反射表面，以及至少一个致动单元，其包括具有大的平面内平移的微致动器和至少一个微转换器被配置为将微致动器的大的平面内平移转换成反射表面的大的平面外平面。 MEMS单元通过控制反射表面的平面平移来改变透镜单元和图像传感器之间的距离，以便在图像传感器上形成焦点对准法师。

4. 发明申请

US20080268072A1 Method of Improving Anticancer Effect of Pulsatillae Radix and a Composition Prepared by the Method 审中-公开
标题翻译：提高白头翁药物抗肿瘤效果的方法及其制备方法
公开(公告)号：US20080268072A1
公开(公告)日：2008-10-30
申请号：US11658891
申请日：2005-07-29
申请人： Song-Bae Kim , Byeong Jun An , Hye Young Kim , Jong Seok Kim , Jong Uk Kim , Seong Cheol Bang , Jee Hyun Lee
发明人： Song-Bae Kim , Byeong Jun An , Hye Young Kim , Jong Seok Kim , Jong Uk Kim , Seong Cheol Bang , Jee Hyun Lee
IPC分类号： A61K36/00 , C12P1/00 , A61P31/00
CPC分类号： A61K36/71
摘要： The present invention relates to a composition enriched with 3-0-[O-α-L-rhamnopyranosyl-(1→2)-[0-β-D-glucopyranosyl-(1-→4)]-α-L-arabinopyranosyl]hederagenin (Code No. SB 365) of which antitumor activity is very strong by enzyme-reacting and extracting Pulsatillac radix.
摘要翻译：本发明涉及富含3-0- [O-α-L-鼠李糖吡喃糖基 - （1-> 2） - [0-β-D-吡喃葡萄糖基 - （1→4）]-α-L - 阿拉伯吡喃糖基] hederagenin（编号SB365），其抗肿瘤活性通过酶反应和提取白头翁药物而非常强烈。

5. 发明申请

US20080098193A1 Methods and Apparatus for Reallocating Addressable Spaces Within Memory Devices 有权
标题翻译：用于在存储器件内重新分配可寻址空间的方法和装置
公开(公告)号：US20080098193A1
公开(公告)日：2008-04-24
申请号：US11565811
申请日：2006-12-01
申请人： Jung-Been Im , Hye-Young Kim , Young-Joon Choi , Dong-Gi Lee , Shea-Yun Lee
发明人： Jung-Been Im , Hye-Young Kim , Young-Joon Choi , Dong-Gi Lee , Shea-Yun Lee
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7211
摘要： Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.
摘要翻译：集成电路系统包括非易失性存储器件（例如，快闪EEPROM器件）和存储器处理电路。存储器处理电路电耦合到非易失性存储器件。存储器处理电路被配置为重新分配非易失性存储器件内的可寻址空间。响应于由存储器处理电路接收的容量调整命令，通过增加非易失性存储器件中被保留为冗余存储器地址的物理地址的数量来执行该重新分配。

6. 发明授权

US07158203B2 Method of fabricating pixel electrode in liquid crystal display 有权
标题翻译：液晶显示器中制作像素电极的方法
公开(公告)号：US07158203B2
公开(公告)日：2007-01-02
申请号：US10029144
申请日：2001-12-28
申请人： Hye Young Kim , You Shin Ahn
发明人： Hye Young Kim , You Shin Ahn
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/13
CPC分类号： G02F1/13439 , G02F1/136227
摘要： A method of fabricating a pixel electrode of a liquid crystal display uses an etchant that has low damage to metals to thereby enhance yields. In the method, a protective film covers a switching device, and a contact hole is defined at the protective film in such a manner to expose one electrode of the switching device. The pixel electrode, connected via the contact hole to the one electrode of the switching device, is formed on the protective film by using a low-temperature process in which a Hydrogen-containing gas is injected within a vacuum chamber. Accordingly, the etching process time can be shortened and damage to the metal can be virtually eliminated.
摘要翻译：制造液晶显示器的像素电极的方法使用对金属具有低损伤的蚀刻剂，从而提高产量。在该方法中，保护膜覆盖开关装置，并且在保护膜上限定接触孔，以露出开关装置的一个电极。通过使用在真空室内注入含氢气体的低温工艺，在保护膜上形成通过接触孔与开关元件的一个电极连接的像素电极。因此，可以缩短蚀刻处理时间，实际上可以消除金属的损坏。

7. 发明授权

US06888597B2 Method of array substrate for transflective liquid crystal display device 有权
标题翻译：半透射液晶显示装置的阵列基板方法
公开(公告)号：US06888597B2
公开(公告)日：2005-05-03
申请号：US10259834
申请日：2002-09-30
申请人： Kyoung-Su Ha , Houm-il Baek , Dong-guk Kim , Tao-yong Jung , Hye-young Kim , Mi-sook Nam
发明人： Kyoung-Su Ha , Houm-il Baek , Dong-guk Kim , Tao-yong Jung , Hye-young Kim , Mi-sook Nam
IPC分类号： G02F1/1335 , G02F1/1362
CPC分类号： G02F1/136227 , G02F1/133555
摘要： A manufacturing method of an array substrate for a transflective liquid crystal display device includes forming a gate insulator on a gate line and a gate electrode formed on a substrate. A data line, source and drain electrodes are formed on an ohmic contact layer formed on an active layer on the gate insulator. A first passivation layer made of a first material is deposited on the data line, source and drain electrodes. A second passivation layer made of a second material is deposited on the first passivation layer. The second passivation layer is patterned, thereby forming a first drain contact hole exposing the first passivation layer over the drain electrode. A reflector is formed on the second passivation layer, the reflector having a first transmissive hole The first passivation layer is patterned thereby forming a second drain contact hole exposing the drain electrode. The second drain contact hole corresponds to the first drain contact hole. A transparent electrode is formed on the second passivation layer and on the reflector, wherein the transparent electrode is connected to the drain electrode through the first and second drain contact holes.
摘要翻译：半透射型液晶显示装置用阵列基板的制造方法包括在栅极线上形成栅极绝缘体，形成在基板上的栅电极。数据线，源极和漏极形成在形成在栅极绝缘体上的有源层上的欧姆接触层上。由第一材料制成的第一钝化层沉积在数据线，源极和漏极上。由第二材料制成的第二钝化层沉积在第一钝化层上。图案化第二钝化层，从而形成在漏极上方暴露第一钝化层的第一漏极接触孔。反射器形成在第二钝化层上，反射器具有第一透射孔。第一钝化层被图案化，从而形成露出漏电极的第二漏极接触孔。第二漏极接触孔对应于第一漏极接触孔。透明电极形成在第二钝化层和反射器上，其中透明电极通过第一和第二漏极接触孔连接到漏电极。

8. 发明授权

US6048783A Method of forming an electrode on a substrate of a semiconductor device 有权
标题翻译：在半导体器件的基板上形成电极的方法
公开(公告)号：US6048783A
公开(公告)日：2000-04-11
申请号：US282976
申请日：1999-03-31
申请人： Hye-Young Kim , Kyo-Hoo Moon
发明人： Hye-Young Kim , Kyo-Hoo Moon
IPC分类号： H01L21/205 , H01L21/28 , H01L21/3213 , H01L29/423 , H01L21/3205
CPC分类号： H01L29/42384 , H01L21/28008 , H01L21/32135
摘要： A double-layered electrode layer is formed on a substrate according to a process in which lower and upper electrode layer forming materials are deposited on a substrate in this order, then a lower photoresist pattern is formed on the upper electrode layer forming material. Next, the lower and upper electrode layer forming materials are isotropically etched to obtain lower and upper electrode layers, after which the upper electrode layer is anisotropically etched such that a width of the upper electrode layer becomes less than that of the lower electrode layer.
摘要翻译：根据以下工序，在基板上形成双层电极层，其中下电极层形成材料和上电极层形成材料依次沉积在基板上，然后在上电极层形成材料上形成下光致抗蚀剂图案。接下来，对上下电极层形成材料进行各向同性蚀刻以获得下电极层和上电极层，之后对上电极层进行各向异性蚀刻，使得上电极层的宽度变得小于下电极层的宽度。

9. 发明授权

US5828796A Optical switch for reducing processing errors in a coupling region 失效
标题翻译：用于减少耦合区域中处理误差的光开关
公开(公告)号：US5828796A
公开(公告)日：1998-10-27
申请号：US747766
申请日：1996-11-13
申请人： Seon Gyu Han , Hye Young Kim , Myung Hyun Lee , Hyung Jong Lee , Yong Hyub Won
发明人： Seon Gyu Han , Hye Young Kim , Myung Hyun Lee , Hyung Jong Lee , Yong Hyub Won
IPC分类号： G02B6/35 , G02B6/12 , G02B6/125 , G02F1/313 , G02B6/26
CPC分类号： G02F1/3136 , G02B6/125 , G02B2006/12145 , G02B2006/12147 , G02B2006/12159
摘要： An optical switch having reduced processing errors in a coupling region, according to the claimed invention includes an input portion having a pair of optical waveguides; an output portion having a pair of optical waveguides; a light phase shifting portion for inducing an additional phase change on light travelling in the input portion; a first light coupling waveguide for coupling between two light signals of the input portion and for providing a coupled signal with the light phase shifting portion; and a second light coupling waveguide for coupled between two light signals of the light phase shifting means and for providing a coupled signal with the output portion. The light coupling unit includes a waveguide. The switch reduces considerably any error that stems from manufacturing variations between waveguides in a coupling region since the waveguides share the error produced in a coupling region. The length of the switching element can be reduced since the coupled between waveguides is not indirect as in DC switches and BB switches. Due to the reduction in length, the output loss is reduced considerable.
摘要翻译：根据要求保护的发明，在耦合区域中具有减小的处理误差的光开关包括具有一对光波导的输入部分; 具有一对光波导的输出部; 光相移部分，用于在输入部分中行进的光线上引起附加的相位变化; 第一光耦合波导，用于耦合所述输入部分的两个光信号，并用于与所述光相移部分提供耦合信号; 以及第二光耦合波导，用于耦合在所述光相移装置的两个光信号之间，并用于与所述输出部分提供耦合信号。光耦合单元包括波导。由于波导共享在耦合区域中产生的误差，所以该开关显着地减少了由耦合区域中的波导之间的制造变化引起的任何误差。开关元件的长度可以减小，因为在DC开关和BB开关中，波导之间的耦合不是间接的。由于长度的减小，输出损耗相当可观。

10. 发明授权

US08810908B2 Binoculars with micromirror array lenses 有权
标题翻译：双镜望远镜与微镜阵列镜头
公开(公告)号：US08810908B2
公开(公告)日：2014-08-19
申请号：US12050918
申请日：2008-03-18
申请人： Hye Young Kim , Jin Young Sohn , Gyoung Il Cho , Cheong Soo Seo
发明人： Hye Young Kim , Jin Young Sohn , Gyoung Il Cho , Cheong Soo Seo
IPC分类号： G02B23/00 , G02B23/12 , G02B5/08
CPC分类号： G02B23/12 , G02B5/08 , G02B23/00 , G02B23/02 , G02B26/0833
摘要： The binoculars of the present invention comprise two optical units; one optical unit for each eye. Each optical unit comprises a first reflector element and a second reflector element, wherein at least one of the reflector elements is a micromirror array reflector. The binoculars of the present invention provide focusing and/or zoom functions without or with minimal macroscopic mechanical lens movement.
摘要翻译：本发明的双筒望远镜包括两个光学单元; 每个眼睛一个光学单元。每个光学单元包括第一反射器元件和第二反射器元件，其中至少一个反射器元件是微镜阵列反射器。本发明的双筒望远镜提供聚焦和/或缩放功能，而不具有或具有最小的宏观机械透镜运动。

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