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1. 发明授权

US06888597B2 Method of array substrate for transflective liquid crystal display device 有权
标题翻译：半透射液晶显示装置的阵列基板方法
公开(公告)号：US06888597B2
公开(公告)日：2005-05-03
申请号：US10259834
申请日：2002-09-30
申请人： Kyoung-Su Ha , Houm-il Baek , Dong-guk Kim , Tao-yong Jung , Hye-young Kim , Mi-sook Nam
发明人： Kyoung-Su Ha , Houm-il Baek , Dong-guk Kim , Tao-yong Jung , Hye-young Kim , Mi-sook Nam
IPC分类号： G02F1/1335 , G02F1/1362
CPC分类号： G02F1/136227 , G02F1/133555
摘要： A manufacturing method of an array substrate for a transflective liquid crystal display device includes forming a gate insulator on a gate line and a gate electrode formed on a substrate. A data line, source and drain electrodes are formed on an ohmic contact layer formed on an active layer on the gate insulator. A first passivation layer made of a first material is deposited on the data line, source and drain electrodes. A second passivation layer made of a second material is deposited on the first passivation layer. The second passivation layer is patterned, thereby forming a first drain contact hole exposing the first passivation layer over the drain electrode. A reflector is formed on the second passivation layer, the reflector having a first transmissive hole The first passivation layer is patterned thereby forming a second drain contact hole exposing the drain electrode. The second drain contact hole corresponds to the first drain contact hole. A transparent electrode is formed on the second passivation layer and on the reflector, wherein the transparent electrode is connected to the drain electrode through the first and second drain contact holes.
摘要翻译：半透射型液晶显示装置用阵列基板的制造方法包括在栅极线上形成栅极绝缘体，形成在基板上的栅电极。数据线，源极和漏极形成在形成在栅极绝缘体上的有源层上的欧姆接触层上。由第一材料制成的第一钝化层沉积在数据线，源极和漏极上。由第二材料制成的第二钝化层沉积在第一钝化层上。图案化第二钝化层，从而形成在漏极上方暴露第一钝化层的第一漏极接触孔。反射器形成在第二钝化层上，反射器具有第一透射孔。第一钝化层被图案化，从而形成露出漏电极的第二漏极接触孔。第二漏极接触孔对应于第一漏极接触孔。透明电极形成在第二钝化层和反射器上，其中透明电极通过第一和第二漏极接触孔连接到漏电极。

2. 发明授权

US08207068B2 Method of fabricating a resistance based memory device and the memory device 有权
标题翻译：制造基于电阻的存储器件和存储器件的方法
公开(公告)号：US08207068B2
公开(公告)日：2012-06-26
申请号：US12654395
申请日：2009-12-18
申请人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
发明人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
IPC分类号： H01L21/26
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.
摘要翻译：示例性实施例涉及制造存储器件和存储器件的方法。制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到下电极。可以减小并稳定存储器件的复位电流。

3. 发明申请

US20100099218A1 Method of fabricating a resistance based memory device and the memory device 有权
公开(公告)号：US20100099218A1
公开(公告)日：2010-04-22
申请号：US12654395
申请日：2009-12-18
申请人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
发明人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
IPC分类号： H01L21/34
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

4. 发明授权

US07659566B2 Method of fabricating a resistance based memory device and the memory device 有权
标题翻译：制造基于电阻的存储器件和存储器件的方法
公开(公告)号：US07659566B2
公开(公告)日：2010-02-09
申请号：US11501880
申请日：2006-08-10
申请人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
发明人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
IPC分类号： H01L27/108
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.
摘要翻译：示例性实施例涉及制造存储器件和存储器件的方法。制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径下电极。可以减小并稳定存储器件的复位电流。

5. 发明申请

US20070037351A1 Method of fabricating a resistance based memory device and the memory device 有权
标题翻译：制造基于电阻的存储器件和存储器件的方法
公开(公告)号：US20070037351A1
公开(公告)日：2007-02-15
申请号：US11501880
申请日：2006-08-10
申请人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
发明人： Seung-eon Ahn , Hye-young Kim , Byoung-ho Park , Jung-bin Yun , You-seon Kim
IPC分类号： H01L21/336
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.
摘要翻译：示例性实施例涉及制造存储器件和存储器件的方法。制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到下电极。可以减小并稳定存储器件的复位电流。

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