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1. 发明授权

US08796679B2 Thin film transistor having semiconductor active layer 有权
标题翻译：具有半导体活性层的薄膜晶体管
公开(公告)号：US08796679B2
公开(公告)日：2014-08-05
申请号：US13230169
申请日：2011-09-12
申请人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
发明人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
IPC分类号： H01L29/10
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
摘要翻译：制造IGZO有源层的方法包括从第一靶标沉积包括In，Ga和Zn的离子，以及从具有不同原子组成的第二靶子和第一靶材沉积包含In的离子。可以控制来自第二靶的离子的沉积，以将IGZO层中的In的原子％调节为约45原子％至约80原子％。

2. 发明申请

US20110315983A1 THIN FILM TRANSISTOR HAVING SEMICONDUCTOR ACTIVE LAYER 有权
标题翻译：具有半导体活性层的薄膜晶体管
公开(公告)号：US20110315983A1
公开(公告)日：2011-12-29
申请号：US13230169
申请日：2011-09-12
申请人： Jong-han JEONG , Jae-kyeong JEONG , Jin-seong PARK , Yeon-gon MO , Hui-won YANG , Min-kyu KIM , Tae-kyung AHN , Hyun-soo SHIN , Hun jung LEE
发明人： Jong-han JEONG , Jae-kyeong JEONG , Jin-seong PARK , Yeon-gon MO , Hui-won YANG , Min-kyu KIM , Tae-kyung AHN , Hyun-soo SHIN , Hun jung LEE
IPC分类号： H01L29/786
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
摘要翻译：制造IGZO有源层的方法包括从第一靶标沉积包括In，Ga和Zn的离子，以及从具有不同原子组成的第二靶子和第一靶材沉积包含In的离子。可以控制来自第二靶的离子的沉积，以将IGZO层中的In的原子％调节为约45原子％至约80原子％。

3. 发明授权

US07928429B2 Organic TFT, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：有机TFT，其制造方法和具有该有机TFT的平板显示装置
公开(公告)号：US07928429B2
公开(公告)日：2011-04-19
申请号：US11435849
申请日：2006-05-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L27/3274 , H01L51/0021 , H01L51/0541
摘要： An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
摘要翻译：有机薄膜晶体管（TFT），制造方法和包括有机TFT的显示器。在TFT中，通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差，不会发生沟道区的断开。制造有机TFT的方法包括在基板上形成缓冲膜，通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元，在缓冲膜上形成电极层，形成源极和漏极在凹面单元内通过使用光刻工艺蚀刻电极层，在源极和漏极以及缓冲膜上形成半导体层，在半导体层上形成栅极绝缘膜，并在栅极绝缘膜上形成栅电极。

4. 发明申请

US20090251047A1 Organic light emitting display (OLED) and its method of fabrication 有权
标题翻译：有机发光显示器（OLED）及其制造方法
公开(公告)号：US20090251047A1
公开(公告)日：2009-10-08
申请号：US12315000
申请日：2008-12-19
申请人： Hun-Jung Lee , Jae-Kyeong Jeong , Steve Y.G. Mo
发明人： Hun-Jung Lee , Jae-Kyeong Jeong , Steve Y.G. Mo
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/7869
摘要： An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.
摘要翻译：有机发光显示器（OLED）和制造OLED的方法包括：包括像素区域和非像素区域的衬底; 布置在所述基板的非像素区域中的栅电极; 布置在其上形成有栅电极的基板上的第一绝缘层，并且在与栅电极相对的区域的上表面上具有开槽; 埋置在沟槽中并且包括源极区，沟道区和漏极区的半导体层; 以及布置在基板的像素区域中的有机薄膜层。在半导体层的漏极区域和有机薄膜层之间设置公共电极，以将漏极区域电耦合到有机薄膜层。

5. 发明申请

US20090020753A1 Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer 有权
标题翻译：半导体有源层的制造方法，使用其的薄膜晶体管的制造方法以及具有半导体活性层的薄膜晶体管
公开(公告)号：US20090020753A1
公开(公告)日：2009-01-22
申请号：US12219037
申请日：2008-07-15
申请人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
发明人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
IPC分类号： H01L29/12 , C23C14/00 , H01L21/00
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
摘要翻译：制造IGZO有源层的方法包括从第一靶标沉积包括In，Ga和Zn的离子，以及从具有不同原子组成的第二靶子和第一靶材沉积包含In的离子。可以控制来自第二靶的离子的沉积，以将IGZO层中的In的原子％调节为约45原子％至约80原子％。

6. 发明申请

US20080277658A1 Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法，包括薄膜晶体管的有机发光显示装置及其制造方法
公开(公告)号：US20080277658A1
公开(公告)日：2008-11-13
申请号：US12149944
申请日：2008-05-09
申请人： Hun-Jung Lee , Jae-Kyeong Jeong , Yeon-Gon Mo
发明人： Hun-Jung Lee , Jae-Kyeong Jeong , Yeon-Gon Mo
IPC分类号： H01L29/22 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/3244
摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.
摘要翻译：薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

7. 发明授权

US07365488B2 High efficiency organic electroluminescent display and method for fabricating the same 有权
标题翻译：高效有机电致发光显示器及其制造方法
公开(公告)号：US07365488B2
公开(公告)日：2008-04-29
申请号：US11485270
申请日：2006-07-13
申请人： Kwan-Hee Lee , Seoung-Yoon Ryu , Hun-Jung Lee , Sang-Il Park , Jae-Bon Koo
发明人： Kwan-Hee Lee , Seoung-Yoon Ryu , Hun-Jung Lee , Sang-Il Park , Jae-Bon Koo
IPC分类号： H05B33/22 , H05B33/24
CPC分类号： H01L51/5218 , H01L27/3211 , H01L27/3244 , H01L27/3295 , H01L51/5016 , H01L51/5265 , H01L2251/5315 , H01L2251/558 , Y10S428/917
摘要： An organic electroluminescent display comprises: anode electrodes of R, G and B unit pixels formed separate from each other on a substrate; organic thin-film layers of the R, G and B unit pixels formed on the anode electrodes; and a cathode electrode formed over an entire surface of the substrate. The anode electrode of at least one unit pixel, among the R, G and B unit pixels, has a thickness different from anode electrodes of the other unit pixels. The anode electrode of each of the unit pixels comprises a first film having a high reflectivity and a second film for adjusting a work function. The second film of at least one unit pixel, among the unit pixels, has a thickness different from the second films of the other unit pixels. The second film of the R unit pixel is thicker than the second films of the other unit pixels.
摘要翻译：有机电致发光显示器包括：R，G和B单元像素的阳极在基板上彼此分离; 形成在阳极上的R，G和B单元像素的有机薄膜层; 以及形成在基板的整个表面上的阴极电极。 R，G和B单位像素中的至少一个单位像素的阳极具有与其它单位像素的阳极电极不同的厚度。每个单位像素的阳极包括具有高反射率的第一膜和用于调节功函数的第二膜。单位像素中的至少一个单位像素的第二胶片具有与其它单位像素的第二胶片不同的厚度。 R单元像素的第二膜比其他单位像素的第二膜厚。

8. 发明申请

US20070069206A1 Flat panel display device having an organic thin film transistor and method of manufacturing the same 有权
标题翻译：具有有机薄膜晶体管的平板显示装置及其制造方法
公开(公告)号：US20070069206A1
公开(公告)日：2007-03-29
申请号：US11526945
申请日：2006-09-25
申请人： Hun-Jung Lee , Sung-Jin Kim , Jong-Han Jeong
发明人： Hun-Jung Lee , Sung-Jin Kim , Jong-Han Jeong
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0545
摘要： Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.
摘要翻译：提供一种可降低源电极和漏电极与有机半导体层之间的接触电阻并且易于制造的有机TFT，具有有机TFT的平板显示装置以及制造有机TFT和平板显示装置的方法有同样的有机TFT包括：底物; 形成在基板上的栅电极和阻挡层; 覆盖所述栅电极和所述阻挡层的栅极绝缘膜; 位于栅极绝缘膜上的源电极和漏电极; 分别位于源电极和漏电极上的辅助源电极和辅助漏电极; 以及与辅助源电极和辅助漏电极接触的有机半导体层。

9. 发明申请

US20050279999A1 Thin film transistor, method of fabricating the same, and flat panel display having the same 有权
标题翻译：薄膜晶体管，其制造方法以及具有该薄膜晶体管的平板显示器
公开(公告)号：US20050279999A1
公开(公告)日：2005-12-22
申请号：US11151276
申请日：2005-06-14
申请人： Hun-Jung Lee , Jae-Bon Koo
发明人： Hun-Jung Lee , Jae-Bon Koo
IPC分类号： H01L29/786 , H01L27/32 , H01L29/10 , H01L51/05 , H01L51/10
CPC分类号： H01L51/105 , H01L27/3244 , H01L51/0545
摘要： A thin film transistor (TFT), a method of fabricating the TFT, and a flat panel display having the TFT, wherein the TFT includes a substrate; a gate electrode provided on the substrate; a gate insulating layer provided on the gate electrode; a source electrode and a drain electrode provided on the gate insulating layer and insulated from the gate electrode; and an organic semiconductor layer contacting the source and drain electrodes and insulated from the gate electrode.
摘要翻译：薄膜晶体管（TFT），制造TFT的方法以及具有TFT的平板显示器，其中TFT包括基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 源电极和漏电极，设置在栅极绝缘层上并与栅电极绝缘; 以及与源极和漏极接触并与栅电极绝缘的有机半导体层。

10. 发明申请

US20050116617A1 Organic electro luminescence display and method of fabricating the same 有权
标题翻译：有机电致发光显示器及其制造方法
公开(公告)号：US20050116617A1
公开(公告)日：2005-06-02
申请号：US10992769
申请日：2004-11-22
申请人： Hun-Jung Lee , Jae-Bon Koo , Sang-Il Park
发明人： Hun-Jung Lee , Jae-Bon Koo , Sang-Il Park
IPC分类号： H05B33/22 , H01L27/32 , H05B33/00 , H05B33/08
CPC分类号： H01L27/3244 , H01L27/3258
摘要： An organic electro luminescence (EL) display with low light transmittance material removed from an emission region. The organic EL display comprises a substrate having the emission region and a TFT region. A TFT is formed on the substrate in the TFT region and includes an active layer having source/drain regions, a gate electrode formed on a gate insulating layer, and source/drain electrodes electrically coupled to the source/drain regions. A passivation layer is formed in the TFT region only and it includes a via hole exposing one of the source/drain electrodes. An organic EL element is formed in the emission region and is electrically coupled to one of the source/drain electrodes exposed through the via hole.
摘要翻译：从发射区域去除低透光性材料的有机电致发光（EL）显示器。有机EL显示器包括具有发射区域的基板和TFT区域。 TFT在TFT区域的基板上形成，并且包括具有源极/漏极区域的有源层，形成在栅极绝缘层上的栅极电极和电耦合到源极/漏极区域的源极/漏极电极。钝化层仅形成在TFT区域中，并且其包括暴露源极/漏极之一的通孔。有机EL元件形成在发射区域中，并且电耦合到通过通孔暴露的源/漏电极之一。

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