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1. 发明授权

US07232718B2 Method for forming a deep trench capacitor buried plate 有权
标题翻译：形成深沟槽电容器掩埋板的方法
公开(公告)号：US07232718B2
公开(公告)日：2007-06-19
申请号：US10605234
申请日：2003-09-17
申请人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
发明人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087
摘要： A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.
摘要翻译：一种形成深沟槽电容器掩埋板的方法。提供具有衬垫氧化物和衬垫氮化物的衬底。在衬底中形成深沟槽。掺杂的硅酸盐膜沉积在深沟槽的侧壁上。牺牲层沉积在深沟槽中，并被回蚀以暴露部分掺杂的硅酸盐膜。然后，进行蚀刻处理以去除暴露的掺杂硅酸盐膜和用于形成凹槽的衬垫氧化物的一部分。牺牲层被去除。沉积氮化硅层以填充凹部并覆盖掺杂的硅酸盐膜。最后，进行热氧化工艺以形成掺杂的离子区域。去除氮化硅层。去除掺杂的硅酸盐膜。

2. 发明授权

US06833311B2 Manufacturing method for a shallow trench isolation region with high aspect ratio 有权
公开(公告)号：US06833311B2
公开(公告)日：2004-12-21
申请号：US10426327
申请日：2003-04-30
申请人： Hsin-Jung Ho , Chang Rong Wu , Tzu En Ho
发明人： Hsin-Jung Ho , Chang Rong Wu , Tzu En Ho
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A manufacturing method for a shallow trench isolation region with high aspect ratio. The method comprises the steps of providing a substrate with a trench therein, forming a first insulation layer on the substrate and inside the trench by high density plasma chemical vapor deposition (HDPCVD), removing the majority of the first insulation layer outside the trench by spray type etching, and forming a second insulation layer on the first insulation layer by low pressure CVD to fill the trench. According to the present invention, a void-free shallow trench isolation with high aspect ration can be achieved.

3. 发明授权

US06828239B2 Method of forming a high aspect ratio shallow trench isolation 有权
标题翻译：形成高深宽比浅沟槽隔离的方法
公开(公告)号：US06828239B2
公开(公告)日：2004-12-07
申请号：US10121504
申请日：2002-04-11
申请人： Tzu En-Ho , Chang Rong Wu , Hsin-Jung Ho
发明人： Tzu En-Ho , Chang Rong Wu , Hsin-Jung Ho
IPC分类号： H01L21301
CPC分类号： H01L21/76224
摘要： A method of forming a high aspect ratio shallow trench isolation in a semiconductor substrate. The method includes the steps of forming a hard mask layer with a certain pattern on the semiconductor substrate, etching a portion of the semiconductor substrate not covered by the hard mask layer to form a high aspect ratio shallow trench in the semiconductor substrate; forming an oxide liner on the bottom and sidewall of the high aspect ratio shallow trench; performing a LPCVD to form a first oxide layer to fill the high aspect ratio shallow trench, a void being formed in the first oxide layer; etching a portion of the first oxide layer to a certain depth of the high aspect ratio shallow trench and to expose the void; and performing a HDPCVD to form a second oxide layer to fill the high aspect ratio shallow trench.
摘要翻译：一种在半导体衬底中形成高纵横比浅沟槽隔离的方法。该方法包括以下步骤：在半导体衬底上形成具有一定图案的硬掩模层，蚀刻未被硬掩模层覆盖的半导体衬底的一部分，以在半导体衬底中形成高纵横比的浅沟槽; 在高纵横比浅沟槽的底部和侧壁上形成氧化物衬垫; 执行LPCVD以形成第一氧化物层以填充高纵横比浅沟槽，在第一氧化物层中形成空隙; 将所述第一氧化物层的一部分蚀刻到所述高纵横比浅沟槽的一定深度并暴露所述空隙; 并且执行HDPCVD以形成第二氧化物层以填充高纵横比浅沟槽。

4. 发明授权

US06770563B2 Process of forming a bottle-shaped trench 有权
标题翻译：形成瓶形沟槽的工艺
公开(公告)号：US06770563B2
公开(公告)日：2004-08-03
申请号：US10336083
申请日：2003-01-03
申请人： Tung-Wang Huang , Chang Rong Wu , Chien-Mao Liao , Hsin-Jung Ho
发明人： Tung-Wang Huang , Chang Rong Wu , Chien-Mao Liao , Hsin-Jung Ho
IPC分类号： H01L21311
CPC分类号： H01L27/1087 , H01L21/3083 , H01L29/66181
摘要： A process of forming a bottle-shaped trench. A semiconductor substrate with a trench is provided, on which a pad layer and hard mask layer are sequentially formed. A dielectric layer is formed on the hard mask layer to fill the trench. Part of the dielectric layer is etched to expose the sidewall of the upper portion of the trench. A spacer is formed on the sidewall. The residual dielectric layer in the trench is removed, and the partial trench not covered by the spacer is etched to a bottle shape.
摘要翻译：形成瓶状沟槽的工艺。提供具有沟槽的半导体衬底，其上依次形成衬垫层和硬掩模层。在硬掩模层上形成电介质层以填充沟槽。蚀刻介电层的一部分以暴露沟槽上部的侧壁。在侧壁上形成间隔物。去除沟槽中的残余介电层，并且不被间隔物覆盖的部分沟槽被蚀刻成瓶形。

5. 发明授权

US08501566B1 Method for fabricating a recessed channel access transistor device 有权
标题翻译：凹陷通道存取晶体管器件的制造方法
公开(公告)号：US08501566B1
公开(公告)日：2013-08-06
申请号：US13609289
申请日：2012-09-11
申请人： Chung-Yen Chou , Tieh-Chiang Wu , Hsin-Jung Ho
发明人： Chung-Yen Chou , Tieh-Chiang Wu , Hsin-Jung Ho
IPC分类号： H01L21/336
CPC分类号： H01L27/10876
摘要： A method for fabricating a recessed channel access transistor device is provided. A semiconductor substrate having thereon a recess is provided. A gate dielectric layer is formed in the recess. A gate material layer is then deposited into the recess. A dielectric cap layer is formed on the gate material layer. The dielectric cap layer and the gate material layer are etched to form a gate pattern. A liner layer is then formed on the gate pattern. A spacer is formed on the liner layer on each sidewall of the gate pattern. The liner layer not masked by the spacer is etched to form an undercut recess that exposes a portion of the gate material layer. The spacer is then removed. The exposed portion of the gate material layer in the undercut recess is oxidized to form an insulation block therein.
摘要翻译：提供了一种用于制造凹陷通道存取晶体管器件的方法。提供其上具有凹部的半导体衬底。在凹部中形成栅介质层。然后将栅极材料层沉积到凹部中。在栅极材料层上形成电介质盖层。蚀刻电介质盖层和栅极材料层以形成栅极图案。然后在栅极图案上形成衬里层。在栅极图案的每个侧壁上的衬垫层上形成间隔物。蚀刻没有被间隔物掩蔽的衬垫层以形成露出栅极材料层的一部分的底切凹部。然后移除间隔物。在底切凹部中的栅极材料层的暴露部分被氧化以在其中形成绝缘块。

6. 发明申请

US20130075812A1 SINGLE-SIDED ACCESS DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：单面访问装置及其制造方法
公开(公告)号：US20130075812A1
公开(公告)日：2013-03-28
申请号：US13239389
申请日：2011-09-22
申请人： Hsin-Jung Ho , Jeng-Ping Lin , Neng-Tai Shih , Chang-Rong Wu , Chiang-Hung Lin , Chih-Huang Wu
发明人： Hsin-Jung Ho , Jeng-Ping Lin , Neng-Tai Shih , Chang-Rong Wu , Chiang-Hung Lin , Chih-Huang Wu
IPC分类号： H01L29/78
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/785
摘要： A single-sided access device includes an active fin structure comprising a source contact area and a drain contact area separated from each other by an isolation region therebetween; a trench isolation structure disposed at one side of the active fin structure, wherein the trench isolation structure intersects with the isolation region between the source contact area and the drain contact area; a sidewall gate disposed under the isolation region and on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by the trench isolation structure and the sidewall gate, wherein the sidewall gate has multi-fingers that engage with the active fin structure; and a gate dielectric layer between the sidewall gate and the active fin structure.
摘要翻译：单面存取装置包括活动鳍片结构，其包括源极接触区域和通过它们之间的隔离区域彼此分离的漏极接触区域; 沟槽隔离结构，设置在所述有源鳍结构的一侧，其中所述沟槽隔离结构与所述源极接触区域和所述漏极接触区域之间的隔离区域相交; 侧壁门，其设置在所述隔离区域下方并且在所述有源鳍结构的另一侧与所述沟槽隔离结构相对，使得所述有源鳍结构被所述沟槽隔离结构和所述侧壁栅极夹持，其中所述侧壁门具有多指与活跃的鳍结构互动; 以及在侧壁浇口和活性鳍结构之间的栅介质层。

7. 发明授权

US08395209B1 Single-sided access device and fabrication method thereof 有权
标题翻译：单面接入装置及其制造方法
公开(公告)号：US08395209B1
公开(公告)日：2013-03-12
申请号：US13239389
申请日：2011-09-22
申请人： Hsin-Jung Ho , Jeng-Ping Lin , Neng-Tai Shih , Chang-Rong Wu , Chiang-Hung Lin , Chih-Huang Wu
发明人： Hsin-Jung Ho , Jeng-Ping Lin , Neng-Tai Shih , Chang-Rong Wu , Chiang-Hung Lin , Chih-Huang Wu
IPC分类号： H01L29/66
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/785
摘要： A single-sided access device includes an active fin structure comprising a source contact area and a drain contact area separated from each other by an isolation region therebetween; a trench isolation structure disposed at one side of the active fin structure, wherein the trench isolation structure intersects with the isolation region between the source contact area and the drain contact area; a sidewall gate disposed under the isolation region and on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by the trench isolation structure and the sidewall gate, wherein the sidewall gate has multi-fingers that engage with the active fin structure; and a gate dielectric layer between the sidewall gate and the active fin structure.
摘要翻译：单面存取装置包括活动鳍片结构，其包括源极接触区域和通过它们之间的隔离区域彼此分离的漏极接触区域; 沟槽隔离结构，设置在所述有源鳍结构的一侧，其中所述沟槽隔离结构与所述源极接触区域和所述漏极接触区域之间的隔离区域相交; 侧壁门，其设置在所述隔离区域下方并且在所述有源鳍结构的另一侧与所述沟槽隔离结构相对，使得所述有源鳍结构被所述沟槽隔离结构和所述侧壁栅极夹持，其中所述侧壁门具有多指与活跃的鳍结构互动; 以及在侧壁浇口和活性鳍结构之间的栅介质层。

8. 发明申请

US20050059207A1 METHOD FOR FORMING A DEEP TRENCH CAPACITOR BURIED PLATE 有权
标题翻译：形成深层电容电容板的方法
公开(公告)号：US20050059207A1
公开(公告)日：2005-03-17
申请号：US10605234
申请日：2003-09-17
申请人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
发明人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L27/1087
摘要： A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.
摘要翻译：一种形成深沟槽电容器掩埋板的方法。提供具有衬垫氧化物和衬垫氮化物的衬底。在衬底中形成深沟槽。掺杂的硅酸盐膜沉积在深沟槽的侧壁上。牺牲层沉积在深沟槽中，并被回蚀以暴露部分掺杂的硅酸盐膜。然后，进行蚀刻处理以去除暴露的掺杂硅酸盐膜和用于形成凹槽的衬垫氧化物的一部分。牺牲层被去除。沉积氮化硅层以填充凹部并覆盖掺杂的硅酸盐膜。最后，进行热氧化工艺以形成掺杂的离子区域。去除氮化硅层。去除掺杂的硅酸盐膜。

9. 发明授权

US06867089B2 Method of forming a bottle-shaped trench in a semiconductor substrate 有权
标题翻译：在半导体衬底中形成瓶形沟槽的方法
公开(公告)号：US06867089B2
公开(公告)日：2005-03-15
申请号：US10254786
申请日：2002-09-24
申请人： Yi-Nan Chen , Tung-Wang Huang , Hsin-Jung Ho , Hsien-Wen Liu
发明人： Yi-Nan Chen , Tung-Wang Huang , Hsin-Jung Ho , Hsien-Wen Liu
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L27/1087 , H01L28/84
摘要： A method of forming a bottle-shaped trench for capacitor in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. Then, an oxide film is formed on the top portion of the trench. Next, a rugged polysilicon layer is formed on the bottom portion and the top portion of the trench. The rugged polysilicon layer and the semiconductor substrate are etched through the bottom portion of the trench by diluted ammonia solution as the etchant to form a bottle-shaped trench having a rugged surface. Next, the oxide film is removed.
摘要翻译：一种在半导体衬底中形成用于电容器的瓶形沟槽的方法。首先，选择性地蚀刻半导体衬底以形成沟槽，其中沟槽具有顶部和底部。然后，在沟槽的顶部形成氧化膜。接下来，在沟槽的底部和顶部上形成凹凸多晶硅层。凹凸多晶硅层和半导体衬底通过稀释的氨溶液作为蚀刻剂蚀刻通过沟槽的底部，以形成具有粗糙表面的瓶形沟槽。接下来，去除氧化膜。

10. 发明授权

US06800535B1 Method for forming bottle-shaped trenches 有权
标题翻译：形成瓶形沟槽的方法
公开(公告)号：US06800535B1
公开(公告)日：2004-10-05
申请号：US10645681
申请日：2003-08-21
申请人： Tzu-Ching Tsai , Yi-Nan Chen , Hsin-Jung Ho
发明人： Tzu-Ching Tsai , Yi-Nan Chen , Hsin-Jung Ho
IPC分类号： H01L2120
CPC分类号： H01L27/1087
摘要： A method for forming bottle-shaped trenches. First, a substrate is provided. Next, a hard mask with openings is formed on the substrate. The substrate is etched through the openings to form trenches with an upper portion and a lower portion. An isolated layer is formed conformally on the hard mask and in the trenches. A shield layer is formed in the lower portion of the trenches. A part of the insulating layer, which is not covered by the shield layer, is then removed. A protective layer is formed on the upper portion of the trenches. The shield layer and the isolated layer are removed. Finally, the substrate of the lower part of the trenches is wet etched using the protective layer as a mask so as to form bottle-shaped trenches.
摘要翻译：一种用于形成瓶形沟槽的方法。首先，提供基板。接下来，在基板上形成具有开口的硬掩模。通过开口蚀刻衬底以形成具有上部和下部的沟槽。隔离层在硬掩模和沟槽中共形地形成。在沟槽的下部形成有屏蔽层。然后除去未被屏蔽层覆盖的绝缘层的一部分。在沟槽的上部形成有保护层。去除屏蔽层和隔离层。最后，使用保护层作为掩模对沟槽下部的基底进行湿式蚀刻，以形成瓶形沟槽。

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