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    • 4. 发明授权
    • Method of refreshing a memory device, refresh address generator and memory device
    • 刷新存储器件,刷新地址发生器和存储器件的方法
    • US08873324B2
    • 2014-10-28
    • US13240049
    • 2011-09-22
    • Chul-Woo ParkJoo-Sun ChoiHong-Sun Hwang
    • Chul-Woo ParkJoo-Sun ChoiHong-Sun Hwang
    • G11C7/00
    • G11C11/40618G11C11/40622G11C11/408
    • A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.
    • 生成具有刷新周期的刷新地址,以刷新刷新的存储器件。 当刷新地址是第二地址而不是具有第二地址的第一强单元时,对具有第一地址的弱小区执行相应的刷新。 当刷新地址是第三地址时,在具有第三地址的第一强单元或第二强单元之一上执行相应的刷新。 仅对第一,第二和第三地址中的一个存储地址信息,从而可以减少存储容量。 在替代方面,当刷新地址是至少一个预定地址中的任一个以导致刷新利用时,依赖于标志,在弱小区,第一强小区或第二强小区中的一个上执行相应的刷新。