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1. 发明申请

US20120087192A1 Non-Volatile Memory Device with Program Current Clamp and Related Method 有权
标题翻译：具有程序电流钳的非易失性存储器件及相关方法
公开(公告)号：US20120087192A1
公开(公告)日：2012-04-12
申请号：US13315299
申请日：2011-12-09
申请人： Shang-Wei Fang , Ying-Je Chen , Hong-Yi Liao , Wein-Town Sun , Yu-Hsiung Tsai , Cheng-Jye Liu
发明人： Shang-Wei Fang , Ying-Je Chen , Hong-Yi Liao , Wein-Town Sun , Yu-Hsiung Tsai , Cheng-Jye Liu
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/3468
摘要： A method of programming a nonvolatile memory cell which comprises a select transistor and a memory transistor includes applying a preset limit current to a first input of the memory cell, applying a limit voltage to a current limiting circuit electrically connected to a second input of the memory cell, applying a limit voltage to stabilize a voltage drop of the memory cell, and applying a ramped gate voltage to the memory cell to program the memory cell with a preset limited current determined by the current limiting circuit.
摘要翻译：一种对包括选择晶体管和存储晶体管的非易失性存储单元进行编程的方法包括：将预设极限电流施加到存储单元的第一输入端，向限流电路施加极限电压，该限流电路电连接到存储器的第二输入端施加限制电压以稳定存储器单元的电压降，以及将斜坡栅极电压施加到存储器单元，以由由限流电路确定的预置限制电流对存储单元进行编程。

2. 发明授权

US07254086B2 Method for accessing memory 有权
标题翻译：访问内存的方法
公开(公告)号：US07254086B2
公开(公告)日：2007-08-07
申请号：US11163431
申请日：2005-10-19
申请人： Ching-Yuan Lin , Hong-Yi Liao , Yen-Tai Lin , Shih-Yun Lin , Chun-Hung Lu
发明人： Ching-Yuan Lin , Hong-Yi Liao , Yen-Tai Lin , Shih-Yun Lin , Chun-Hung Lu
IPC分类号： G11C8/00
CPC分类号： G11C16/105 , G11C16/3495 , G11C17/146 , G11C17/18 , G11C2216/26
摘要： The present invention provides a method for accessing a memory. The memory contains M one-time programmable memory blocks, and each has a first memory sector and a second memory sector. The method includes: selecting a first target memory block and reading the first target memory block. The step of selecting a first target memory block is performed by comparing the second memory sectors of N one-time programmable memory blocks from M one-time programmable memory blocks by following a search rule to select the first target memory block.
摘要翻译：本发明提供一种访问存储器的方法。存储器包含M个一次性可编程存储器块，并且每个具有第一存储器扇区和第二存储器扇区。该方法包括：选择第一目标存储块并读取第一目标存储块。通过按照搜索规则比较来自M个一次可编程存储器块的N个一次可编程存储器块的第二存储器扇区来选择第一目标存储器块来选择第一目标存储器块的步骤来选择第一目标存储器块。

3. 发明申请

US20090251981A1 MEMORY WITH A FAST STABLE SENSING AMPLIFIER 审中-公开
标题翻译：具有快速稳定的感应放大器的记忆
公开(公告)号：US20090251981A1
公开(公告)日：2009-10-08
申请号：US12099776
申请日：2008-04-08
申请人： Po-Hao Huang , Hong-Yi Liao
发明人： Po-Hao Huang , Hong-Yi Liao
IPC分类号： G11C7/00
CPC分类号： G11C7/062 , G11C7/067 , G11C7/12
摘要： A memory includes a memory cell, a sensing amplifier, four N-type MOS transistors, a reference circuit, and a comparator. The sensing amplifier is used for sensing digital data stored in the memory cell of the memory and generating an output signal corresponding to the digital data when the memory cell is read. The sensing amplifier includes a current source, a voltage generator, an auxiliary transistor, and an operational amplifier. The auxiliary transistor is coupled in parallel to the current source so as to provide an additional current to the sensing amplifier initially. Thus, the sensing amplifier can output a stable signal in a short time so as to improve the performance of the memory.
摘要翻译：存储器包括存储单元，感测放大器，四个N型MOS晶体管，参考电路和比较器。感测放大器用于感测存储在存储器的存储单元中的数字数据，并且当读取存储单元时产生与数字数据相对应的输出信号。感测放大器包括电流源，电压发生器，辅助晶体管和运算放大器。辅助晶体管与电流源并联耦合，以便最初向感测放大器提供额外的电流。因此，感测放大器可以在短时间内输出稳定的信号，从而提高存储器的性能。

4. 发明申请

US20070242523A1 Non-volatile memory and operating method thereof 有权
标题翻译：非易失性存储器及其操作方法
公开(公告)号：US20070242523A1
公开(公告)日：2007-10-18
申请号：US11403437
申请日：2006-04-12
申请人： Hong-Yi Liao , Wu-Chang Chang , Ching-Yuan Lin
发明人： Hong-Yi Liao , Wu-Chang Chang , Ching-Yuan Lin
IPC分类号： G11C16/04
CPC分类号： G11C16/0416 , G11C16/0433 , H01L27/115 , H01L27/11568
摘要： An operating method of a non-volatile memory is provided. The non-volatile memory includes plural memory cells. Each memory cell includes a charge storage structure, a gate, and a source and a drain disposed in the well on the both sides of the gate. During an erasing operation, a first voltage is applied to the source of the selected memory cell, a second voltage is applied to the gate of each selected memory cell, and a third voltage is applied to the well; and the drain of the selected memory cell is floated, so that the selected memory cell is erased. In the meantime, the fourth voltage is applied to the drain of each unselected memory cell, the fifth voltage is applied to the gate of the unselected memory cell, and the source of the unselected memory cell is floated to prevent the unselected memory cell from being erased.
摘要翻译：提供了一种非易失性存储器的操作方法。非易失性存储器包括多个存储单元。每个存储单元包括电荷存储结构，栅极以及设置在栅极两侧的阱中的源极和漏极。在擦除操作期间，将第一电压施加到所选择的存储单元的源极，将第二电压施加到每个选择的存储单元的栅极，并将第三电压施加到阱; 并且所选择的存储单元的漏极浮动，使得所选存储单元被擦除。同时，将第四电压施加到每个未选择的存储单元的漏极，第五电压被施加到未选择的存储单元的栅极，并且未选择的存储单元的源被浮置以防止未选择的存储单元擦除

5. 发明申请

US20060262626A1 METHOD FOR ACCESSING MEMORY 有权
标题翻译：访问存储器的方法
公开(公告)号：US20060262626A1
公开(公告)日：2006-11-23
申请号：US11163431
申请日：2005-10-19
申请人： Ching-Yuan Lin , Hong-Yi Liao , Yen-Tai Lin , Shih-Yun Lin , Chun-Hung Lu
发明人： Ching-Yuan Lin , Hong-Yi Liao , Yen-Tai Lin , Shih-Yun Lin , Chun-Hung Lu
IPC分类号： G11C17/18
CPC分类号： G11C16/105 , G11C16/3495 , G11C17/146 , G11C17/18 , G11C2216/26
摘要： The present invention provides a method for accessing a memory. The memory contains M one-time programmable memory blocks, and each has a first memory sector and a second memory sector. The method includes: selecting a first target memory block and reading the first target memory block. The step of selecting a first target memory block is performed by comparing the second memory sectors of N one-time programmable memory blocks from M one-time programmable memory blocks by following a search rule to select the first target memory block.
摘要翻译：本发明提供一种访问存储器的方法。存储器包含M个一次性可编程存储器块，并且每个具有第一存储器扇区和第二存储器扇区。该方法包括：选择第一目标存储块并读取第一目标存储块。通过按照搜索规则比较来自M个一次可编程存储器块的N个一次可编程存储器块的第二存储器扇区来选择第一目标存储器块来选择第一目标存储器块的步骤来选择第一目标存储器块。

6. 发明授权

US08467245B2 Non-volatile memory device with program current clamp and related method 有权
标题翻译：具有程序电流钳的非易失性存储器件及相关方法
公开(公告)号：US08467245B2
公开(公告)日：2013-06-18
申请号：US13315299
申请日：2011-12-09
申请人： Shang-Wei Fang , Ying-Je Chen , Hong-Yi Liao , Wein-Town Sun , Yu-Hsiung Tsai , Cheng-Jye Liu
发明人： Shang-Wei Fang , Ying-Je Chen , Hong-Yi Liao , Wein-Town Sun , Yu-Hsiung Tsai , Cheng-Jye Liu
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/10 , G11C16/3468
摘要： A method of programming a nonvolatile memory cell which comprises a select transistor and a memory transistor includes applying a preset limit current to a first input of the memory cell, applying a limit voltage to a current limiting circuit electrically connected to a second input of the memory cell, applying a limit voltage to stabilize a voltage drop of the memory cell, and applying a ramped gate voltage to the memory cell to program the memory cell with a preset limited current determined by the current limiting circuit.
摘要翻译：一种对包括选择晶体管和存储晶体管的非易失性存储单元进行编程的方法包括：将预设极限电流施加到存储单元的第一输入端，向限流电路施加极限电压，该限流电路电连接到存储器的第二输入端施加限制电压以稳定存储器单元的电压降，以及将斜坡栅极电压施加到存储器单元，以由由限流电路确定的预置限制电流对存储单元进行编程。

7. 发明授权

US07450418B2 Non-volatile memory and operating method thereof 有权
标题翻译：非易失性存储器及其操作方法
公开(公告)号：US07450418B2
公开(公告)日：2008-11-11
申请号：US11403437
申请日：2006-04-12
申请人： Hong-Yi Liao , Wu-Chang Chang , Ching-Yuan Lin
发明人： Hong-Yi Liao , Wu-Chang Chang , Ching-Yuan Lin
IPC分类号： G11C11/34
CPC分类号： G11C16/0416 , G11C16/0433 , H01L27/115 , H01L27/11568
摘要： An operating method of a non-volatile memory is provided. The non-volatile memory includes plural memory cells. Each memory cell includes a charge storage structure, a gate, and a source and a drain disposed in the well on the both sides of the gate. During an erasing operation, a first voltage is applied to the source of the selected memory cell, a second voltage is applied to the gate of each selected memory cell, and a third voltage is applied to the well; and the drain of the selected memory cell is floated, so that the selected memory cell is erased. In the meantime, the fourth voltage is applied to the drain of each unselected memory cell, the fifth voltage is applied to the gate of the unselected memory cell, and the source of the unselected memory cell is floated to prevent the unselected memory cell from being erased.
摘要翻译：提供了一种非易失性存储器的操作方法。非易失性存储器包括多个存储单元。每个存储单元包括电荷存储结构，栅极以及设置在栅极两侧的阱中的源极和漏极。在擦除操作期间，将第一电压施加到所选择的存储单元的源极，将第二电压施加到每个选择的存储单元的栅极，并将第三电压施加到阱; 并且所选择的存储单元的漏极浮动，使得所选存储单元被擦除。同时，将第四电压施加到每个未选择的存储单元的漏极，第五电压被施加到未选择的存储单元的栅极，并且未选择的存储单元的源被浮置以防止未选择的存储单元擦除

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