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    • 2. 发明申请
    • Capacitor and method of manufacturing the same
    • 电容器及其制造方法
    • US20080054400A1
    • 2008-03-06
    • US11878698
    • 2007-07-26
    • Woo-Sung LeeHong-Bum ParkHyun-Jin ShinJong-Bom Seo
    • Woo-Sung LeeHong-Bum ParkHyun-Jin ShinJong-Bom Seo
    • H01L29/92H01L21/02
    • H01L28/91H01L27/10814H01L27/10852
    • Example embodiments relate to a capacitor including p-type doped silicon germanium and a method of manufacturing the capacitor. The capacitor may include a lower electrode, a dielectric layer, an upper electrode, a barrier layer and a capping layer. The lower electrode may have a cylindrical shape. The dielectric layer may be on the lower electrode. The dielectric layer may have a uniform thickness. The upper electrode may be on the dielectric layer. The upper electrode may have a more uniform thickness. The capping layer may be on the upper electrode. The capping layer may include a silicon germanium layer doped with p-type impurities. The barrier layer may be between the upper electrode and the capping layer to prevent (or reduce) the p-type impurities from infiltrating into the dielectric layer.
    • 示例性实施例涉及包括p型掺杂硅锗的电容器和制造电容器的方法。 电容器可以包括下电极,电介质层,上电极,阻挡层和封盖层。 下部电极可以具有圆筒形状。 电介质层可以在下电极上。 介电层可以具有均匀的厚度。 上电极可以在电介质层上。 上部电极可以具有更均匀的厚度。 覆盖层可以在上电极上。 覆盖层可以包括掺杂有p型杂质的硅锗层。 阻挡层可以在上电极和覆盖层之间,以防止(或减少)p型杂质渗透到电介质层中。
    • 3. 发明授权
    • Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same
    • 电容器,其形成方法,具有电容器的半导体器件及其制造方法
    • US07482242B2
    • 2009-01-27
    • US11523514
    • 2006-09-20
    • Hong-Bum ParkWoo-Sung LeeNam-Kyu KimJung-Hee ChungJae-Hyoung Choi
    • Hong-Bum ParkWoo-Sung LeeNam-Kyu KimJung-Hee ChungJae-Hyoung Choi
    • H01L21/20
    • H01L28/91H01L27/10817H01L27/10852
    • Example embodiments relate to a capacitor, a method of forming the same, a semiconductor device having the capacitor and a method of manufacturing the same. Other example embodiments are directed to a capacitor having an upper electrode structure including a first upper electrode and a second upper electrode, a method of forming the same, a semiconductor device having the capacitor and a method of manufacturing the same. In a method of forming a capacitor, a lower electrode may be formed on a substrate, and then a dielectric layer may be formed on the lower electrode. An upper electrode structure may be formed on the dielectric layer. The upper electrode structure may include a first upper electrode and a second upper electrode. The second upper electrode may include at least two of a silicon layer, a first silicon germanium layer and a second silicon germanium layer doped with p-type impurities. The upper electrode structure may be formed without generating voids between the dielectric layer and the upper electrode structure. The capacitor and the semiconductor device having the upper electrode structure may have improved electrical characteristics.
    • 示例性实施例涉及电容器,其形成方法,具有电容器的半导体器件及其制造方法。 其他示例性实施例涉及具有包括第一上电极和第二上电极的上电极结构的电容器,其形成方法,具有电容器的半导体器件及其制造方法。 在形成电容器的方法中,可以在基板上形成下电极,然后在下电极上形成电介质层。 上电极结构可以形成在电介质层上。 上电极结构可以包括第一上电极和第二上电极。 第二上电极可以包括硅层,第一硅锗层和掺杂有p型杂质的第二硅锗层中的至少两个。 可以形成上电极结构,而不会在电介质层和上电极结构之间产生空隙。 具有上电极结构的电容器和半导体器件可具有改善的电特性。