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1. 发明授权

US07286389B2 Low-power, p-channel enhancement-type metal-oxide semiconductor field-effect transistor (PMOSFET) SRAM cells 失效
标题翻译：低功率，p沟道增强型金属氧化物半导体场效应晶体管（PMOSFET）SRAM单元
公开(公告)号：US07286389B2
公开(公告)日：2007-10-23
申请号：US11186395
申请日：2005-07-21
申请人： Pramod Kolar , Hisham Z. Massoud
发明人： Pramod Kolar , Hisham Z. Massoud
IPC分类号： G11C11/412
CPC分类号： G11C11/412 , Y10S257/903
摘要： Low-power, all-p-channel enhancement-type metal-oxide semiconductor field-effect transistor (PMOSFET) SRAM cells are disclosed. A PMOSFET SRAM cell is disclosed. The SRAM cell can include a latch having first and second PMOSFETs for storing data. Further, a gate of the first PMOSFET is connected to a drain of the second PMOSFET at a first memory node. A gate of the second PMOSFET is connected to a drain of the first PMOSFET at a second memory node. The SRAM cell can also include third and fourth PMOSFETs forming a pull-down circuit. A source of the third PMOSFET is connected to the first memory node. Further, a source of the fourth PMOSFET is connected to the second memory node. The SRAM cell can include access circuitry for accessing data at the first and second memory nodes for read or write operations.
摘要翻译：公开了低功率，全P沟道增强型金属氧化物半导体场效应晶体管（PMOSFET）SRAM单元。公开了PMOSFET SRAM单元。 SRAM单元可以包括具有用于存储数据的第一和第二PMOSFET的锁存器。此外，第一PMOSFET的栅极在第一存储器节点处连接到第二PMOSFET的漏极。第二PMOSFET的栅极在第二存储器节点处连接到第一PMOSFET的漏极。 SRAM单元还可以包括形成下拉电路的第三和第四PMOSFET。第三PMOSFET的源极连接到第一存储器节点。此外，第四PMOSFET的源极连接到第二存储器节点。 SRAM单元可以包括用于访问第一和第二存储器节点处的数据以进行读取或写入操作的访问电路。

2. 发明授权

US5313044A Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor 失效
标题翻译：在灯加热的快速热处理器中实时晶片温度和薄膜生长测量和控制的方法和装置
公开(公告)号：US5313044A
公开(公告)日：1994-05-17
申请号：US874812
申请日：1992-04-28
申请人： Hisham Z. Massoud , Ronald K. Sampson
发明人： Hisham Z. Massoud , Ronald K. Sampson
IPC分类号： B23K26/03 , G01N21/21 , H01L21/66 , B23K26/00
CPC分类号： G01N21/211 , B23K26/034 , B23K26/0652 , B23K26/1224 , B23K26/123 , B24B37/013 , H01L22/26 , H01L22/12
摘要： An ellipsometer measures/monitors the change in polarization of light upon reflection from a wafer sample. The temperature of the wafer substrate surface and the film thickness are then simultaneously determined in situ using ellipsometry where the true wafer temperature is determined in real-time by the computer from a calculation based on the known temperature dependence of the refractive index of the wafer. The power output to the lamps is then adjusted accordingly to raise or lower the wafer temperature within the apparatus. This process continues automatically to maintain the desired temperature and film growth rate until the desired film thickness is achieved.
摘要翻译：椭偏仪测量/监测来自晶片样品的反射时光的偏振变化。然后，使用椭圆偏光法同时确定晶片衬底表面的温度和膜厚度，其中由基于已知的晶片的折射率温度依赖性的计算由计算机实时确定真晶片温度。然后相应地调节输出到灯的功率，以提高或降低装置内的晶片温度。该过程自动继续保持所需的温度和膜生长速率，直到达到所需的膜厚度。

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