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1. 发明申请

US20080303066A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080303066A1
公开(公告)日：2008-12-11
申请号：US12118731
申请日：2008-05-11
申请人： Yasuaki Yonemochi , Hisakazu Otoi
发明人： Yasuaki Yonemochi , Hisakazu Otoi
IPC分类号： H01L23/538
CPC分类号： H01L27/11521 , H01L27/11519
摘要： A semiconductor device is provided which can suppress the deterioration of its reliability caused by liquid soaking into a gap. The semiconductor device includes plural gate electrode layers and an interlayer insulating film. The gate electrode layers are formed so as to extend in the same direction in a planar layout and each have a gate wiring portion and a contact pad portion. The interlayer insulating film is formed over the gate electrode layers and gaps so as to leave the gaps each between adjacent gate wiring portions and also between adjacent gate wiring portion and contact pad portion. A second spacing which is the distance between adjacent gate wiring portion and contact pad portion is 2.1 times or less as large as a first spacing which is the distance between adjacent gate wiring portions.
摘要翻译：提供一种半导体器件，其可以抑制由液体浸入间隙中导致的其可靠性的劣化。半导体器件包括多个栅电极层和层间绝缘膜。栅极电极层形成为在平面布局中沿相同的方向延伸，并且每个具有栅极布线部分和接触焊盘部分。层间绝缘膜形成在栅极电极层和间隙之上，以便在相邻的栅极布线部分之间以及相邻的栅极布线部分和接触焊盘部分之间留下间隙。作为相邻的栅极配线部与接触焊盘部之间的距离的第二间隔是与相邻的栅极配线部之间的距离的第一间隔的2.1倍以下。

2. 发明申请

US20060231884A1 Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device 有权
标题翻译：非易失性半导体器件及制造非易失性半导体器件的方法
公开(公告)号：US20060231884A1
公开(公告)日：2006-10-19
申请号：US11402972
申请日：2006-04-13
申请人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
摘要翻译：一种具有主表面的半导体衬底，在半导体衬底的主表面上彼此隔开形成的第一和第二浮置栅极，分别位于第一和第二浮置栅极上的第一和第二控制栅极，形成在第一和第二浮置栅极上的第一绝缘膜第一控制栅极，形成在第二控制栅极上以与第一绝缘膜接触的第二绝缘膜，以及通过实现第一绝缘膜和第二绝缘体之间的接触而形成在第一浮动栅极和第二浮动栅极之间的间隙部分包括电影。由此，可以确保非易失性半导体器件的功能，并且可以抑制浮动栅极的阈值电压的变化。

3. 发明授权

US07705392B2 Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device 有权
标题翻译：非易失性半导体器件及制造非易失性半导体器件的方法
公开(公告)号：US07705392B2
公开(公告)日：2010-04-27
申请号：US11402972
申请日：2006-04-13
申请人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L29/76
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
摘要翻译：一种具有主表面的半导体衬底，在半导体衬底的主表面上彼此隔开形成的第一和第二浮置栅极，分别位于第一和第二浮置栅极上的第一和第二控制栅极，形成在第一和第二浮置栅极上的第一绝缘膜第一控制栅极，形成在第二控制栅极上以与第一绝缘膜接触的第二绝缘膜，以及通过实现第一绝缘膜和第二绝缘体之间的接触而形成在至少在第一浮栅和第二浮栅之间的间隙部分包括电影。由此，可以确保非易失性半导体器件的功能，并且可以抑制浮动栅极的阈值电压的变化。

4. 发明申请

US20100044773A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100044773A1
公开(公告)日：2010-02-25
申请号：US12495093
申请日：2009-06-30
申请人： Yoshiyuki Ishigaki , Naoki Tsuji , Hisakazu Otoi , Hiroki Mukai , Yuichi Kunori
发明人： Yoshiyuki Ishigaki , Naoki Tsuji , Hisakazu Otoi , Hiroki Mukai , Yuichi Kunori
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L27/11546 , H01L29/42328 , H01L29/7881
摘要： To provide a semiconductor memory device having an improved write efficiency because deterioration of a gate insulating film is suppressed.An element formation region is formed in a region of a semiconductor substrate sandwiched between element isolation regions. In the element isolation regions, a silicon oxide film is filled in a trench having a predetermined depth. An erase gate electrode is formed in the element isolation region while being buried in the silicon oxide film. Over the element formation region, floating gate electrodes are formed via a gate oxide film and control gate electrodes are formed over the floating gate electrodes via an ONO film. Two adjacent floating gate electrodes have therebetween an insulating film formed to cover the erase gate electrode.
摘要翻译：提供一种由于栅极绝缘膜的劣化被抑制而具有提高的写入效率的半导体存储器件。元件形成区域形成在夹在元件隔离区域之间的半导体衬底的区域中。在元件隔离区域中，氧化硅膜填充在具有预定深度的沟槽中。在元件隔离区域中形成擦除栅电极，同时埋入氧化硅膜中。在元件形成区域上，通过栅极氧化膜形成浮栅，并且通过ONO膜在浮栅上形成控制栅电极。两个相邻的浮栅电极之间形成有覆盖擦除栅电极的绝缘膜。

5. 发明授权

US08669172B2 Method of manufacturing nonvolatile semiconductor device 有权
标题翻译：非易失性半导体器件的制造方法
公开(公告)号：US08669172B2
公开(公告)日：2014-03-11
申请号：US13488015
申请日：2012-06-04
申请人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
摘要翻译：一种具有主表面的半导体衬底，在半导体衬底的主表面上彼此隔开形成的第一和第二浮置栅极，分别位于第一和第二浮置栅极上的第一和第二控制栅极，形成在第一和第二浮置栅极上的第一绝缘膜第一控制栅极，形成在第二控制栅极上以与第一绝缘膜接触的第二绝缘膜，以及通过实现第一绝缘膜和第二绝缘体之间的接触而形成在至少在第一浮栅和第二浮栅之间的间隙部分包括电影。由此，可以确保非易失性半导体器件的功能，并且可以抑制浮动栅极的阈值电压的变化。

6. 发明授权

US06930351B2 Semiconductor device with dummy gate electrode 有权
标题翻译：具有虚拟栅电极的半导体器件
公开(公告)号：US06930351B2
公开(公告)日：2005-08-16
申请号：US10640019
申请日：2003-08-14
申请人： Hisakazu Otoi , Hiromi Makimoto
发明人： Hisakazu Otoi , Hiromi Makimoto
IPC分类号： H01L21/8247 , H01L27/105 , H01L29/00 , H01L29/788
CPC分类号： H01L27/11536 , H01L27/105 , H01L27/11526
摘要： A gate electrode, a drain region and a source region of a memory cell transistor are formed in an element forming region in a memory cell region. A gate electrode and source/drain regions of a transistor for peripheral circuitry are formed in an element forming region in a peripheral circuitry region. A dummy gate electrode is formed on an element isolation insulating film, and the position of each end of the dummy gate electrode and that of corresponding end of element isolation insulating film are different. An interlayer insulating film is formed on a semiconductor substrate to cover the gate electrode and the dummy electrode. Thus, a semiconductor device in which occurrence of crystal defects is suppressed can be obtained.
摘要翻译：在存储单元区域中的元件形成区域中形成存储单元晶体管的栅极，漏极区域和源极区域。用于外围电路的晶体管的栅电极和源极/漏极区域形成在外围电路区域中的元件形成区域中。在元件隔离绝缘膜上形成虚拟栅电极，并且虚拟栅电极的各端和元件隔离绝缘膜的相应端的位置不同。在半导体衬底上形成层间绝缘膜以覆盖栅电极和虚拟电极。因此，可以获得抑制晶体缺陷发生的半导体器件。

7. 发明申请

US20050035397A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050035397A1
公开(公告)日：2005-02-17
申请号：US10640019
申请日：2003-08-14
申请人： Hisakazu Otoi , Hiromi Makimoto
发明人： Hisakazu Otoi , Hiromi Makimoto
IPC分类号： H01L21/8247 , H01L27/105 , H01L29/00 , H01L29/788
CPC分类号： H01L27/11536 , H01L27/105 , H01L27/11526
摘要： A gate electrode, a drain region and a source region of a memory cell transistor are formed in an element forming region in a memory cell region. A gate electrode and source/drain regions of a transistor for peripheral circuitry are formed in an element forming region in a peripheral circuitry region. A dummy gate electrode is formed on an element isolation insulating film, and the position of each end of the dummy gate electrode and that of corresponding end of element isolation insulating film are different. An interlayer insulating film is formed on a semiconductor substrate to cover the gate electrode and the dummy electrode. Thus, a semiconductor device in which occurrence of crystal defects is suppressed can be obtained.
摘要翻译：在存储单元区域中的元件形成区域中形成存储单元晶体管的栅极，漏极区域和源极区域。用于外围电路的晶体管的栅电极和源极/漏极区域形成在外围电路区域中的元件形成区域中。在元件隔离绝缘膜上形成虚拟栅电极，并且虚拟栅电极的各端和元件隔离绝缘膜的相应端的位置不同。在半导体衬底上形成层间绝缘膜以覆盖栅电极和虚拟电极。因此，可以获得抑制晶体缺陷发生的半导体器件。

8. 发明申请

US20120238089A1 METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR DEVICE 有权
标题翻译：制造非易失性半导体器件的方法
公开(公告)号：US20120238089A1
公开(公告)日：2012-09-20
申请号：US13488015
申请日：2012-06-04
申请人： Yasuaki YONEMOCHI , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki YONEMOCHI , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L21/283
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
摘要翻译：一种具有主表面的半导体衬底，在半导体衬底的主表面上彼此隔开形成的第一和第二浮置栅极，分别位于第一和第二浮置栅极上的第一和第二控制栅极，形成在第一和第二浮置栅极上的第一绝缘膜第一控制栅极，形成在第二控制栅极上以与第一绝缘膜接触的第二绝缘膜，以及通过实现第一绝缘膜和第二绝缘体之间的接触而形成在至少在第一浮栅和第二浮栅之间的间隙部分包括电影。由此，可以确保非易失性半导体器件的功能，并且可以抑制浮动栅极的阈值电压的变化。

9. 发明授权

US08211777B2 Method of manufacturing nonvolatile semiconductor device 有权
标题翻译：非易失性半导体器件的制造方法
公开(公告)号：US08211777B2
公开(公告)日：2012-07-03
申请号：US12727890
申请日：2010-03-19
申请人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki Yonemochi , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L21/76
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
摘要翻译：一种具有主表面的半导体衬底，在半导体衬底的主表面上彼此隔开形成的第一和第二浮置栅极，分别位于第一和第二浮置栅极上的第一和第二控制栅极，形成在第一和第二浮置栅极上的第一绝缘膜第一控制栅极，形成在第二控制栅极上以与第一绝缘膜接触的第二绝缘膜，以及通过实现第一绝缘膜和第二绝缘体之间的接触而形成在至少在第一浮栅和第二浮栅之间的间隙部分包括电影。由此，可以确保非易失性半导体器件的功能，并且可以抑制浮动栅极的阈值电压的变化。

10. 发明申请

US20100190330A1 NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20100190330A1
公开(公告)日：2010-07-29
申请号：US12727890
申请日：2010-03-19
申请人： Yasuaki YONEMOCHI , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
发明人： Yasuaki YONEMOCHI , Hisakazu Otoi , Akio Nishida , Shigeru Shiratake
IPC分类号： H01L21/28
CPC分类号： H01L27/11521 , H01L21/28273 , H01L21/7682 , H01L27/115 , H01L29/42324
摘要： A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.

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