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1. 发明授权

US08737158B2 Semiconductor device and method of controlling the same 有权
标题翻译：半导体装置及其控制方法
公开(公告)号：US08737158B2
公开(公告)日：2014-05-27
申请号：US13431412
申请日：2012-03-27
申请人： Kinu Matsunaga , Hiroshi Akamatsu
发明人： Kinu Matsunaga , Hiroshi Akamatsu
IPC分类号： G11C8/00
CPC分类号： G11C7/12 , G11C7/222 , G11C11/401 , G11C11/4094 , G11C29/16
摘要： A device includes a command decoder that is configured to output, in a normal operation mode, a precharge signal in response to a first type transition edge of a synchronous signal, and an active signal in response to a next first type transition edge that is next to the first type transition edge. The command decoder is configured to output, in a test mode, the precharge signal in response to a second type transition edge of the synchronous signal, and the active signal in response to a next first type transition edge that is next to the second type transition edge.
摘要翻译：一种设备包括命令解码器，其被配置为在正常操作模式下响应于同步信号的第一类型转换边缘输出预充电信号，并响应于下一个第一类型转换边缘而输出下一个到第一类型的过渡边缘。命令解码器被配置为在测试模式下响应于同步信号的第二类型转换边沿而输出预充电信号，并且响应于接下来的第二类型转换的下一个第一类型转换边缘来输出有效信号边缘。

2. 发明申请

US20110133808A1 APPARATUS 审中-公开
标题翻译：仪器
公开(公告)号：US20110133808A1
公开(公告)日：2011-06-09
申请号：US12963176
申请日：2010-12-08
申请人： Hiroshi AKAMATSU
发明人： Hiroshi AKAMATSU
IPC分类号： H03H11/26
CPC分类号： H03H11/265
摘要： An apparatus has a delay circuit, a delay control circuit which detects the delay time of the delay circuit and generates a delay adjustment signal based upon the detection result, and a delay adjustment circuit operable to adjust delay time of the delay circuit in response to the delay adjustment signal.
摘要翻译：一种装置具有延迟电路，延迟控制电路，其检测延迟电路的延迟时间，并根据该检测结果生成延迟调整信号;以及延迟调整电路，用于响应于该延迟电路调整延迟电路的延迟时间延时调整信号。

3. 发明申请

US20090115493A1 Electric fuse determination circuit and determination method 有权
标题翻译：电熔丝确定电路及测定方法
公开(公告)号：US20090115493A1
公开(公告)日：2009-05-07
申请号：US12289588
申请日：2008-10-30
申请人： Hiroshi Akamatsu
发明人： Hiroshi Akamatsu
IPC分类号： H01H37/76
CPC分类号： G11C17/18
摘要： An electrical fuse determination circuit that can speedily and reliably incorporate an electrical fuse data and improve a reliability of electrical fuse device, includes a first electrical fuse device of which one end connects with a higher voltage, a second electrical fuse device of which one end connects with a lower voltage, a set portion that puts one of the first electrical fuse device and the second electrical fuse device in a conductive state, and a determination portion that determines a voltage level of a predetermined contact point connecting the other end of the first electrical fuse device and the other end of the second electrical fuse device.
摘要翻译：一种可快速可靠地并入电熔丝数据并提高电熔丝装置的可靠性的电熔丝确定电路，包括一端与较高电压连接的第一电熔丝装置，一端连接的第二电熔丝装置具有较低的电压，将第一电熔丝装置和第二电熔丝装置中的一个置于导通状态的设定部分，以及确定部分，其确定连接第一电熔丝装置和第二电熔丝装置的另一端的预定接触点的电压电平保险丝装置和第二电熔丝装置的另一端。

4. 发明申请

US20090114856A1 TRANSPORT/STORAGE CASK FOR RADIOACTIVE MATERIAL 有权
标题翻译：运输/储存放射性物质
公开(公告)号：US20090114856A1
公开(公告)日：2009-05-07
申请号：US12185328
申请日：2008-08-04
申请人： Jun Shimojo , Hiroshi Akamatsu , Hiroaki Taniuchi , Kenichi Mantani
发明人： Jun Shimojo , Hiroshi Akamatsu , Hiroaki Taniuchi , Kenichi Mantani
IPC分类号： G21F5/00
CPC分类号： G21F5/06 , G21F1/08 , G21F1/10 , G21F1/12 , G21F5/08 , G21F5/10 , G21Y2002/201 , G21Y2002/303 , G21Y2004/101 , G21Y2004/303
摘要： A transport/storage cask for a radioactive material has an inner shell, an outer shell and a circular gamma ray shielding layer and a circular neutron shielding layer both of which are placed between the inner shell and the outer shell. The gamma ray shielding layer is formed by aligning a plurality of gamma ray shielding blocks composed of lead in a block shape in the circumferential direction. The entire gamma ray shielding block in the axial direction is covered with a copper tube having a higher elasticity limit than the gamma ray shielding block. In the above transport/storage cask, the gamma ray shielding layer composed of lead or a lead alloy is not easily deformed.
摘要翻译：用于放射性物质的运输/储存桶具有内壳，外壳和圆形伽马射线屏蔽层以及环形中子屏蔽层，两者均放置在内壳和外壳之间。伽马射线屏蔽层通过沿圆周方向对齐由块状的铅构成的多个伽马射线屏蔽块而形成。整个伽马射线屏蔽块在轴向方向上被具有比伽马射线屏蔽块更高的弹性极限的铜管覆盖。在上述输送/储存箱中，由铅或铅合金构成的伽马射线屏蔽层不容易变形。

5. 发明授权

US07293692B2 Solder joint structure, soldering method, and electronic-component manufacturing apparatus using the same structure and the method 失效
标题翻译：焊接结构，焊接方法和使用相同结构和方法的电子部件制造装置
公开(公告)号：US07293692B2
公开(公告)日：2007-11-13
申请号：US10865474
申请日：2004-06-10
申请人： Hiroshi Akamatsu , Yukinori Kawamura , Hiroshi Kai , Osamu Kuramoto , Shigeru Iwasaki , Kenji Asai , Minoru Hibino
发明人： Hiroshi Akamatsu , Yukinori Kawamura , Hiroshi Kai , Osamu Kuramoto , Shigeru Iwasaki , Kenji Asai , Minoru Hibino
IPC分类号： B23K31/02
CPC分类号： H05K3/3415 , B23K3/0638 , B23K2101/42 , H05K3/3463 , H05K3/3484 , H05K2201/035 , H05K2201/10992 , H05K2203/0545 , H05K2203/111 , H05K2203/1121 , H05K2203/1476 , Y02P70/613 , Y10T428/12493
摘要： A structure of solder joint structure formed of zinc-based lead-free solder having excellent characteristics is disclosed. Between a first lead-free solder layer and a soldering pad, the following layers are formed: a tin-copper alloy layer formed on the pad; a first alloy layer formed of second lead-free layer of which main ingredients are tin and silver; and a second alloy layer formed between the first alloy layer and the first lead-free solder. This structure allows forming the solder joint structure formed of zinc-based lead-free solder having high joint strength.
摘要翻译：公开了由具有优异特性的锌基无铅焊料形成的焊点结构的结构。在第一无铅焊料层和焊盘之间形成以下层：形成在焊盘上的锡 - 铜合金层; 由主要成分为锡和银的第二无铅层形成的第一合金层; 以及形成在第一合金层和第一无铅焊料之间的第二合金层。这种结构允许形成由具有高接合强度的锌基无铅焊料形成的焊点结构。

6. 发明授权

US5631867A Semiconductor storage device requiring short time for program voltage to rise 失效
标题翻译：半导体存储器件需要短时间的编程电压上升
公开(公告)号：US5631867A
公开(公告)日：1997-05-20
申请号：US456328
申请日：1995-06-01
申请人： Hiroshi Akamatsu , Yukinobu Adachi , Susumu Tanida , Tooru Ichimura
发明人： Hiroshi Akamatsu , Yukinobu Adachi , Susumu Tanida , Tooru Ichimura
IPC分类号： G11C11/407 , C04B28/34 , G11C5/14 , G11C7/00
CPC分类号： G11C5/147 , G11C5/145
摘要： An external power source voltage Vcc rises until it exceeds the threshold voltage Vth of an NMOS transistor diode-connected between the external power source (voltage Vcc) and an internal boosted power source (voltage Vpp), whereupon the NMOS transistor is turned on, supplying the internal boosted power source with a voltage (Vcc-Vth) until the power source voltage Vcc reaches its final value. And when the internal reset signal ZPOR expires, the internal boosted power source generating circuit is started to operate so that the internal boost source voltage Vpp is boosted to an intended level Vpp. As a result, when the power is turned on, early stabilization of the boosted power source voltage is realized in a semiconductor storage device.
摘要翻译：外部电源电压Vcc上升直到其超过连接在外部电源（电压Vcc）和内部升压电源（电压Vpp）之间的NMOS晶体管二极管的阈值电压Vth，于是NMOS晶体管导通，具有电压（Vcc-Vth）的内部升压电源，直到电源电压Vcc达到其最终值。并且当内部复位信号ZPOR期满时，内部升压电源发生电路开始工作，使得内部升压电源电压Vpp升压到预期电平Vpp。结果，当电源接通时，在半导体存储装置中实现升压电源电压的早期稳定。

7. 发明授权

US4044495A Device for capturing cockroaches 失效
标题翻译：用于捕获蟑螂的装置
公开(公告)号：US4044495A
公开(公告)日：1977-08-30
申请号：US624190
申请日：1975-10-20
申请人： Akira Nishimura , Hiroshi Akamatsu , Sentaro Negoro , Yasutoshi Yoshida
发明人： Akira Nishimura , Hiroshi Akamatsu , Sentaro Negoro , Yasutoshi Yoshida
IPC分类号： A01M1/02 , A01M1/14 , A01M1/10
CPC分类号： A01M1/02 , A01M1/14 , A01M2200/011
摘要： A device for use in capturing cockroaches which comprises a container having at least one opening or entrance permitting cockroaches to enter therein and a slanting stepping plate extending inwardly upward from the bottom of the opening.
摘要翻译：一种用于捕获蟑螂的装置，其包括容器，该容器具有允许蟑螂进入其中的至少一个开口或入口以及从该开口的底部向内向内延伸的倾斜脚踏板。

8. 发明授权

US07973298B2 Transport/storage cask for radioactive material 有权
标题翻译：用于放射性物质的运输/储存桶
公开(公告)号：US07973298B2
公开(公告)日：2011-07-05
申请号：US12185328
申请日：2008-08-04
申请人： Jun Shimojo , Hiroshi Akamatsu , Hiroaki Taniuchi , Kenichi Mantani
发明人： Jun Shimojo , Hiroshi Akamatsu , Hiroaki Taniuchi , Kenichi Mantani
IPC分类号： G21F5/00 , G21C11/00
CPC分类号： G21F5/06 , G21F1/08 , G21F1/10 , G21F1/12 , G21F5/08 , G21F5/10 , G21Y2002/201 , G21Y2002/303 , G21Y2004/101 , G21Y2004/303
摘要： A transport/storage cask for a radioactive material has an inner shell, an outer shell and a circular gamma ray shielding layer and a circular neutron shielding layer both of which are placed between the inner shell and the outer shell. The gamma ray shielding layer is formed by aligning a plurality of gamma ray shielding blocks composed of lead in a block shape in the circumferential direction. The entire gamma ray shielding block in the axial direction is covered with a copper tube having a higher elasticity limit than the gamma ray shielding block. In the above transport/storage cask, the gamma ray shielding layer composed of lead or a lead alloy is not easily deformed.
摘要翻译：用于放射性物质的运输/储存桶具有内壳，外壳和圆形伽马射线屏蔽层以及环形中子屏蔽层，两者均放置在内壳和外壳之间。伽马射线屏蔽层通过沿圆周方向对齐由块状的铅构成的多个伽马射线屏蔽块而形成。整个伽马射线屏蔽块在轴向方向上被具有比伽马射线屏蔽块更高的弹性极限的铜管覆盖。在上述输送/储存箱中，由铅或铅合金构成的伽马射线屏蔽层不容易变形。

9. 发明申请

US20100195416A1 Anti-fuse circuit and semiconductor memory device 审中-公开
标题翻译：防熔丝电路和半导体存储器件
公开(公告)号：US20100195416A1
公开(公告)日：2010-08-05
申请号：US12656486
申请日：2010-02-01
申请人： Hiroshi Akamatsu
发明人： Hiroshi Akamatsu
IPC分类号： G11C7/00 , H03K19/0175 , G11C17/16
CPC分类号： G11C11/4074 , G11C7/1072 , G11C7/22 , G11C7/222 , G11C11/4076 , G11C17/16 , G11C29/785 , G11C2229/763
摘要： An anti-fuse circuit uses first to fifth power supplies which have first to fifth power supply voltages, respectively, in the order of highest to lowest during writing. The anti-fuse circuit includes: a first level shift circuit which is connected to the second to fourth power supplies and which converts a first logic signal that changes between the third and fourth power supply voltages into a second logic signal that changes between the second and fourth power supply voltages; a second level shift circuit which is connected to the first, second, and fourth power supplies and which converts the second logic signal into a third logic signal that changes between the first and fourth power supply voltages; a transistor having a source connected to the first power supply and a gate connected to the third logic signal; and an anti-fuse element having one end connected to the drain of the transistor and the other end connected to the fifth power supply.
摘要翻译：反熔丝电路使用在写入期间以从最高到最低的顺序分别具有第一至第五电源电压的第一至第五电源。反熔丝电路包括：第一电平移位电路，其连接到第二至第四电源，并将在第三和第四电源电压之间变化的第一逻辑信号转换成在第二和第四电源电压之间变化的第二逻辑信号，第四电源电压; 第二电平移位电路，其连接到第一，第二和第四电源，并将第二逻辑信号转换成在第一和第四电源电压之间变化的第三逻辑信号; 具有连接到第一电源的源极和连接到第三逻辑信号的栅极的晶体管; 以及一个反熔丝元件，其一端连接到晶体管的漏极，另一端连接到第五电源。

10. 发明申请

US20070037854A1 Process for preparing sulfonamide-containing indole compounds 审中-公开
标题翻译：制备含磺酰胺的吲哚化合物的方法
公开(公告)号：US20070037854A1
公开(公告)日：2007-02-15
申请号：US10571285
申请日：2004-09-01
申请人： Kenji Hayashi , Taichi Abe , Naoki Ozeki , Hiroshi Akamatsu
发明人： Kenji Hayashi , Taichi Abe , Naoki Ozeki , Hiroshi Akamatsu
IPC分类号： A61K31/4439 , A61K31/404 , C07D403/02 , C07D209/18
CPC分类号： C07D209/42
摘要： A process for preparing a compound (5a) represented by the following formula: wherein R1 and R2 each independently represent hydrogen, C1-4 alkyl, etc. and A represents cyanophenyl, etc., characterized by reacting a compound (3a) represented by the following formula: wherein R1 and R2 have the same definitions as above, with a compound represented by the formula A—SO2Cl, wherein A has the same definition as above, in the presence of a base, in a mixed solvent of water and C1-6 alkyl acetate.
摘要翻译：制备由下式表示的化合物（5a）的方法：其中R 1和R 2各自独立地表示氢，C 1-4 >烷基等，A表示氰基苯基等，其特征在于使由下式表示的化合物（3a）与其中R 1和R 2相同与式A-SO 2 Cl表示的化合物，其中A在碱存在下，在水和C 1-6烷基乙酸酯。

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